公开(公告)号：JP2013239729A

公开(公告)日：2013-11-28

申请号：JP2013145614

申请日：2013-07-11

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： CHI KYEONG-KOO ,  ERIK A EDELBERG

IPC: H01L21/3065 ,  H05H1/46

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816

Abstract: PROBLEM TO BE SOLVED: To provide a method for selectively etching an ultra high aspect ratio feature dielectric through a carbon based mask.SOLUTION: A method for selectively etching an ultra high aspect ratio feature dielectric 408 through a carbon based mask 412 in an etch chamber comprises: providing the etch chamber with a flow of an etch gas comprising a fluorocarbon-containing molecule and an oxygen-containing molecule; providing a pulsed bias RF signal; and providing an energizing RF signal to transform the etch gas to plasma.

Abstract translation: 要解决的问题：提供一种通过碳基掩模选择性地蚀刻超高深度比特征电介质的方法。解决方案：一种用于通过蚀刻室中的基于碳的掩模412选择性地蚀刻超高宽比特征电介质408的方法 包括：向蚀刻室提供包含含氟烃分子和含氧分子的蚀刻气流; 提供脉冲偏压RF信号; 以及提供激发RF信号以将蚀刻气体转换成等离子体。

公开(公告)号：JP2013171840A

公开(公告)日：2013-09-02

申请号：JP2013031820

申请日：2013-02-21

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： JOHN C VALCORE JR ,  BRADFORD J LYNDAKER

IPC: H05H1/46 ,  C23C16/505 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC classification number: H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3299

Abstract: PROBLEM TO BE SOLVED: To provide a method for assuring that an RF frequency of an RF power supply can quickly react to change in plasma impedance caused by pulsing an independent pulse RF signal.SOLUTION: The method includes pulsing at a first pulsing frequency a first RF power supply to deliver a first RF signal between a high power state and a low power state. The method further includes switching the RF frequency of a second RF signal output by a second RF power supply between a first predefined RF frequency and a second RF frequency responsive to values of a measurable chamber parameter. The first RF frequency and the second RF frequencies and the thresholds for switching are learned in advance during a learning phase while the first RF signal pulses between the high power state and low power state at a second RF frequency lower than the first RF frequency and while the second RF power supply operates in different modes.

Abstract translation: 要解决的问题：提供一种确保RF电源的RF频率可以快速响应于通过脉冲独立脉冲RF信号引起的等离子体阻抗变化的方法。解决方案：该方法包括以第一脉冲频率脉冲第一 RF电源以在高功率状态和低功率状态之间传送第一RF信号。 该方法还包括响应于可测量室参数的值，在第一预定RF频率和第二RF频率之间切换由第二RF电源输出的第二RF信号的RF频率。 第一RF频率和第二RF频率以及用于切换的阈值在学习阶段被预先学习，而第一RF信号在高功率状态和低功率状态之间以低于第一RF频率的第二RF频率脉冲，同时 第二个RF电源以不同的模式运行。

公开(公告)号：JP2013141004A

公开(公告)日：2013-07-18

申请号：JP2013030175

申请日：2013-02-19

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WANG ING-YANN ALBERT ,  ROBERT CHEBI

IPC: H01L21/3065 ,  C30B33/12 ,  H01L21/205 ,  H05H1/00 ,  H05H1/46

CPC classification number: H01J37/32458

Abstract: PROBLEM TO BE SOLVED: To provide a technique which extends a processing window function of a plasma chamber.SOLUTION: A plasma processing chamber 100 includes a substrate support part 109 having an upper surface defined so as to support a substrate 111 at a substantially horizontal orientation in the chamber. The plasma processing chamber further includes multiple extendable members 2a, 2b, and 2c disposed in the chamber at the outer side of a periphery of the substrate support part. Further, the multiple extendable members are disposed so that a center of an upper surface of the substrate support part is positioned at the center of the multiple extendable members. Each of the extendable members may adjust open volume of an area above the upper surface of the substrate support part. This structure allows each extendable member to be formed so as to independently move in a substantially perpendicular direction for adjusting a plasma state in the open volume of the area above the upper surface of the substrate support part.

Abstract translation: 要解决的问题：提供延长等离子体室的加工窗口功能的技术。解决方案：等离子体处理室100包括基板支撑部分109，该基板支撑部分109具有限定为以基本上水平的方向支撑基板111的上表面 在房间里 等离子体处理室还包括在基板支撑部分的外围的外侧设置在腔室中的多个可延伸构件2a，2b和2c。 此外，多个可延伸构件被设置为使得基板支撑部的上表面的中心位于多个可延伸构件的中心。 每个可延伸构件可以调节在衬底支撑部分的上表面上方的区域的开放体积。 这种结构允许每个可延伸构件形成为在基本上垂直的方向上独立地移动，以便调整在衬底支撑部分的上表面上方的区域的开放体积中的等离子体状态。

公开(公告)号：JP2013080956A

公开(公告)日：2013-05-02

申请号：JP2012285812

申请日：2012-12-27

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DHINDSA RAJINDER

IPC: H01L21/3065 ,  H05H1/46

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32862

Abstract: PROBLEM TO BE SOLVED: To provide an improved chamber cleaning mechanism, a device and a method.SOLUTION: A plasma processing chamber may be utilized for enabling further adjustment of an etching process. In one embodiment, the plasma processing chamber 100 configured to generate plasma includes a bottom electrode assembly 130 which comprises an inner bottom electrode 131 configured to receive a substrate and an outer bottom electrode 135 disposed outside of the inner bottom electrode. The plasma processing chamber further includes a top electrode assembly 110 having a top electrode 111 and disposed directly above the inner bottom electrode and the outer bottom electrode.

Abstract translation: 要解决的问题：提供改进的室清洁机构，装置和方法。 解决方案：等离子体处理室可以用于进一步调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室100包括底部电极组件130，底部电极组件130包括构造成接收衬底的内部底部电极131和设置在内部底部电极外部的外部底部电极135。 等离子体处理室还包括具有顶部电极111并直接设置在内部底部电极和外部底部电极上方的顶部电极组件110。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013080909A

公开(公告)日：2013-05-02

申请号：JP2012194636

申请日：2012-09-05

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： ANNE LE GOUIL ,  JEFFREY R LINDAIN ,  YASUSHI ISHIKAWA ,  YOKO YAMAGUCHI ADAMS

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L21/32137 ,  H01J37/321 ,  H01J37/32816 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582

Abstract: PROBLEM TO BE SOLVED: To provide a method for etching high aspect ratio features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber.SOLUTION: A main etch gas flows into the plasma processing chamber. While a first pressure is provided, the main etch gas is formed into plasma. A wafer temperature is maintained at or below 20°C. The pressure is lowered to a second pressure less than the first pressure while the plasma etches through a set of two or more of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first set of two or more of the plurality of bilayers is etched.

Abstract translation: 要解决的问题：提供一种在等离子体处理室中在晶片上形成堆叠的多个硅基双层中蚀刻高纵横比特征的方法。 解决方案：主蚀刻气体流入等离子体处理室。 当提供第一压力时，主蚀刻气体形成等离子体。 晶片温度保持在或低于20℃。 压力降低到低于第一压力的第二压力，而等离子体蚀刻通过一组两个或更多个硅基双层。 在蚀刻多个双层中的两个或更多个的第一组之后，停止主蚀刻气体的流动。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013077859A

公开(公告)日：2013-04-25

申请号：JP2013018861

申请日：2013-02-01

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： ROBERT J STEGER

IPC: H01L21/3065 ,  F27B5/14 ,  F27B17/00 ,  F27D19/00 ,  F27D21/00 ,  F27D99/00 ,  H01J37/32 ,  H01L20060101 ,  H01L21/00 ,  H01L21/306 ,  H01L21/66

CPC classification number: F27D99/0006 ,  F27B5/14 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for adjusting the temperature of a wafer.SOLUTION: An etching system 100 for etching a material of a wafer has a measuring device 114, an etching chamber 102 and a controller 112. The measuring device 114 measures a critical dimension test feature (CD) along the profile of the wafer at a plurality of preset locations. The etching chamber 102 includes a chuck 108 supporting the wafer and a plurality of heating elements 110 positioned adjacently to preset locations within the chuck 108 and receives the wafer from the measuring device 114. The controller 112 is coupled to the measuring device 114 to receive the CD and the plurality of heating elements 110. The controller 112 adjusts the temperature of each heating element during a process to reduce the variation of critical dimensions among the plurality of preset locations by using temperature dependent etching characteristics of an etch process to compensate for CD variation introduced by a lithography process preceding the etch process.

Abstract translation: 要解决的问题：提供一种用于调节晶片温度的方法和装置。 解决方案：用于蚀刻晶片材料的蚀刻系统100具有测量装置114，蚀刻室102和控制器112.测量装置114测量沿着晶片轮廓的临界尺寸测试特征（CD） 在多个预置位置。 蚀刻室102包括支撑晶片的卡盘108和与卡盘108内的预设位置相邻设置的多个加热元件110，并从测量装置114接收晶片。控制器112耦合到测量装置114以接收 CD和多个加热元件110.控制器112通过使用蚀刻工艺的温度依赖蚀刻特性来补偿CD变化的过程中调节每个加热元件的温度以减少多个预设位置之间的临界尺寸的变化 通过蚀刻工艺之前的光刻工艺引入。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013042160A

公开(公告)日：2013-02-28

申请号：JP2012225344

申请日：2012-10-10

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： SINGH HARMEET ,  DAVID COOPERBERG ,  VAHID VAHEDI

IPC: H01L21/3065

CPC classification number: H01L21/6708 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: PROBLEM TO BE SOLVED: To provide a method for etching a semiconductor substrate with an improved limit size uniformity.SOLUTION: The method comprises the steps of: supporting a semiconductor substrate on a substrate support member in an inductively coupled plasma etching chamber; supplying a first etching gas to a central region over the semiconductor substrate by use of a shower head nozzle 23; using an injector 20 to supply, through a side wall of the plasma chamber, a peripheral region surrounding the central region over the semiconductor substrate with a second gas which includes at least one kind of silicon-containing gas and is higher than the first etching gas in silicon concentration; generating plasma from the first etching gas and the second gas; and etching an exposed surface of the semiconductor substrate with the plasma.

Abstract translation: 要解决的问题：提供一种以改进的极限尺寸均匀性蚀刻半导体衬底的方法。 解决方案：该方法包括以下步骤：在电感耦合等离子体蚀刻室中的衬底支撑构件上支撑半导体衬底; 通过使用淋浴头喷嘴23在半导体衬底上的中心区域提供第一蚀刻气体; 使用喷射器20通过等离子体室的侧壁在第二气体的周围区域周围区域提供包括至少一种含硅气体并且高于第一蚀刻气体的第二气体 硅浓度; 从第一蚀刻气体和第二气体产生等离子体; 并用等离子体蚀刻半导体衬底的暴露表面。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012248886A

公开(公告)日：2012-12-13

申请号：JP2012181167

申请日：2012-08-17

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： CHANG CHRISTOPHER C ,  ROBERT J SEGER

IPC: H01L21/3065 ,  H05H1/46 ,  C23C4/00 ,  C23C4/02 ,  C23C4/04 ,  H01J37/32

CPC classification number: H01J37/32477 ,  C23C4/00 ,  C23C4/04 ,  C23C4/10 ,  Y02T50/67 ,  Y10T428/24355 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: PROBLEM TO BE SOLVED: To provide plasma reactor components that reduce the levels of particle contamination inside a reactor chamber.SOLUTION: In a plasma processing chamber 152 of a reactor 150, plasma exposed surfaces of a plasma confinement ring (not shown), chamber wall 172, a chamber liner (not shown) and/or showerhead 154 can be provided with a plasma sprayed coating 160 with surface roughness characteristics that promote polymer adhesion. In addition, plasma exposed surfaces of a substrate support 168 can also be provided with a plasma sprayed coating (not shown). In this manner, substantially all surfaces that confine the high density plasma will have surface roughness characteristics that promote polymer adhesion, and particulate contamination inside the reactor can be substantially reduced.

Abstract translation: 要解决的问题：提供降低反应器室内的颗粒污染水平的等离子体反应器组件。 解决方案：在反应器150的等离子体处理室152中，可以提供等离子体封闭环（未示出），室壁172，室衬套（未示出）和/或喷头154的等离子体暴露表面 等离子喷涂涂层160具有促进聚合物粘附的表面粗糙度特性。 此外，衬底支撑件168的等离子体暴露表面也可以设置有等离子喷涂涂层（未示出）。 以这种方式，基本上限制高密度等离子体的所有表面将具有促进聚合物粘合的表面粗糙度特征，并且可以显着降低反应器内部的微粒污染。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012238890A

公开(公告)日：2012-12-06

申请号：JP2012173922

申请日：2012-08-06

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： SAJADI S M LEZA ,  BRIGHT NICHOLAS

IPC: H01L21/027 ,  G03F1/70 ,  H01L21/3213 ,  H01L21/768

CPC classification number: G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus comprising a computer readable medium which realizes a patterned photoresist layer that can reduce CD (critical dimension) errors and correct geometry dependence of a shrink process.SOLUTION: A medium 614 comprises a computer readable code for receiving a feature layout, and a computer readable code for applying shrink correction on the feature layout. The computer readable code for applying the shrink correction comprises providing corner cutouts, and adjusting line width and length, shape modifications, etc. for forming features in a patterned layer.

Abstract translation: 要解决的问题：提供一种包括计算机可读介质的装置，该计算机可读介质实现可以减少CD（关键尺寸）误差和缩小缩小过程的正确几何依赖性的图案化光致抗蚀剂层。 解决方案：介质614包括用于接收特征布局的计算机可读代码，以及用于在特征布局上应用收缩校正的计算机可读代码。 用于施加收缩校正的计算机可读代码包括提供拐角切口，以及调整线宽和长度，形状修改等以形成图案化层中的特征。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012238882A

公开(公告)日：2012-12-06

申请号：JP2012164925

申请日：2012-07-25

Applicant: Lam Research Corporation ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： YEHIEL GOTKIS ,  VLADIMIR KATZ ,  DAVID HEMKER ,  RODNEY KISTLER ,  BRIGHT NICHOLAS J

IPC: H01L21/3065 ,  G05B23/02 ,  H01L21/304 ,  H01L21/66

CPC classification number: G05B23/0254 ,  H01L22/26

Abstract: PROBLEM TO BE SOLVED: To provide a method for converting a slope based detection task to a threshold based detection task.SOLUTION: The method initiates with defining 140 an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted 142. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated 144. Then, the difference is monitored for successive points to detect 146 a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified 148 based on the detection of the deviation value.

Abstract translation: 要解决的问题：提供一种将基于斜率的检测任务转换为基于阈值的检测任务的方法。 解决方案：该方法通过对与被监视的进程的值相对应的一组点定义140来初始化近似方程。 然后，预测在被监视的处理的当前点的期望值142.接下来，计算被监视的处理的当前点的测量值与相应的预期值之间的差值144.然后，监视该差异 连续点检测146测量值与预期值之间的偏差值。 接下来，基于偏差值的检测来识别148被监视的处理的转变点148。 版权所有（C）2013，JPO＆INPIT