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公开(公告)号:JPS6119106B2
公开(公告)日:1986-05-15
申请号:JP6678579
申请日:1979-05-31
Applicant: Hitachi Ltd
Inventor: TSURUOKA MASAO
IPC: H01L21/52 , H01L21/58 , H01L23/051 , H01L23/32 , H01L23/40 , H01L23/492
CPC classification number: H01L24/83 , H01L23/051 , H01L23/32 , H01L23/4006 , H01L23/4928 , H01L24/33 , H01L2023/4025 , H01L2224/2919 , H01L2224/48463 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/1301 , H01L2924/351 , H01L2924/00 , H01L2924/01062 , H01L2924/3512
Abstract: A semiconductor device using a metal-fiber composite material as an electrode is disclosed. A semiconductor substrate may be a thyristor substrate of a center gate structure and a cathode electrode comprises a lower piece made of copper matrix-carbon fiber composite material which is ohmic-contacted to an n-emitter layer, and an upper piece made of copper which contacts the lower piece. The lower piece has an opening to allow the passage of a gate lead through it while the upper piece has a channel which leads to the lower piece and through which the gate lead extends. The semiconductor substrate is molded by epoxy resin extending from an anode electrode to a cathode electrode.
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公开(公告)号:JPS59194456A
公开(公告)日:1984-11-05
申请号:JP6878283
申请日:1983-04-18
Applicant: Ricoh Co Ltd
Inventor: CHIBA FUMIKIYO , KOMATSU KOUZOU , TAKAHASHI KAZUTOMO , ISHIKAWA YUUICHI , MATSUO KAZUYOSHI
IPC: H01L23/32
CPC classification number: H01L23/32 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE:To improve the reliability of a semiconductor device cassette by plating an IC chip in a so-called chip-on-board (COB) type secured onto a mother board, thereby reducing the mounting area and volume of the IC. CONSTITUTION:IC chips 20, 20 such as ROMs and the like are placed in a COB type on a mother board 2 contained in a cassette case made of upper and lower members 4-1 and 4-2. A pin 10 is integrally formed at the member 4-2, inserted into a positioning hole 11 opened at the board 2 to position the board 2 in a cassette case. A projection 12 for securing the board 2 is integrally formed with the member 4-2, and a similar projection is formed at the member 4-1.
Abstract translation: 目的:通过将IC芯片电镀在固定在母板上的所谓芯片上(COB)型,从而降低IC的安装面积和体积,从而提高半导体器件盒的可靠性。 构成:将IC芯片20,20(例如ROM等)放置在包含在由上部和下部构件4-1和4-2构成的盒壳体中的母板2上的COB型中。 销10一体地形成在构件4-2处,插入到在板2上开口的定位孔11中,以将板2定位在盒壳体中。 用于固定板2的突起12与构件4-2一体地形成,并且在构件4-1处形成类似的突起。
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公开(公告)号:JPS59168656A
公开(公告)日:1984-09-22
申请号:JP3890084
申请日:1984-03-02
Applicant: Bbc Brown Boveri & Cie
Inventor: ARUNO NAIDEITSUHI , BERUNTO ROIKERU , FUUBERUTO HETSUTOMAN
CPC classification number: H01L23/32 , H01L23/4006 , H01L2023/4087 , H01L2924/0002 , H01L2924/00
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公开(公告)号:JPS5965456A
公开(公告)日:1984-04-13
申请号:JP17588082
申请日:1982-10-06
Applicant: Makoto Maeda
Inventor: MAEDA MAKOTO
IPC: H01L23/32
CPC classification number: H01L23/32 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE:To economically and easily develop and manufacture a computer system by comprising a storage holding circuit in the internal space of an IC socket. CONSTITUTION:A storage holding circuit is comprised to an IC socket and is used in combination with a storage element. Thereby, contents of storage element can be held without relation to ON, OFF conditions of main power supply of the system and loading or unloading of storage element to/from the system. As the mode of power supply for storage holding, it is desirable, in such type (Fig. 1) of holding storage content by a capacity of capacitance, to use a tantalum electrolytic capacitor of 10muF and an auxiliary power supply system (Fig. 2), in pair, which allows loading of such socket and is capable of supplying the power because a storage holding time is about 2min or so in such a case where a CMOS type storage element of 2k bytes is used.
Abstract translation: 目的:通过在IC插座的内部空间中包括存储保持电路来经济地和容易地开发和制造计算机系统。 构成:存储保持电路包括在IC插座中并与存储元件组合使用。 因此,可以不关系于系统的主电源的ON,OFF条件以及存储元件到/从系统的装载或卸载而保持存储元件的内容。 作为用于存储保持的电源的模式,在使用容量为10mF的钽电解电容器和辅助电源系统(图2)的情况下,希望以这种类型(图1)将存储容量保持为容量, ),成对地允许加载这种插座并且能够提供电力,因为在使用2k字节的CMOS型存储元件的情况下,存储保持时间约为2分钟左右。
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公开(公告)号:JPS5958856A
公开(公告)日:1984-04-04
申请号:JP15567883
申请日:1983-08-25
Applicant: Siemens Ag
Inventor: BUERUNAA EGAABATSUHIYAA , HERUBERUTO FUOOKUTO , DEIITAA BUNDAARITSUHI
CPC classification number: H01L23/32 , H01L25/072 , H01L2023/4062 , H01L2023/4087 , H01L2924/0002 , H01L2924/00
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公开(公告)号:JPS5910245A
公开(公告)日:1984-01-19
申请号:JP11857782
申请日:1982-07-09
Applicant: Hitachi Ltd
Inventor: SUDA MINORU , AKEYAMA KENJI
CPC classification number: H01L23/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: PURPOSE:To increase the strength of tightening by a bolt without lowering the intensity of power cycles, by forming an undercoat resin layer to be in a double-layer structure whose lower layer is formed of first resin having large adhesiveness to a supporting substrate and whose upper layer is formed of second resin having small adhesiveness to a resin mold body. CONSTITUTION:An undercoat resin, which is prepared by adding liquid or powder silicon resin of 4wt% to liquid epoxy resin, is dropped on a semiconductor pellet 2 mounted on a heat sink 1, baking is applied thereto, and thereby the resin is polymerized and set. A resin layer thus prepared has a double-layer structure wherein a lower layer is formed of epoxy resin 13 and an upper layer of silicon resin 14. When a heat or a mechanical stress is applied to a semiconductor device thus prepared, which is fixed on a wiring substrate 9 by a bolt 8, the silicon resin 14 acts as a release material even when a substrate 1 is deformed, a space 16 is thereby formed, and thus no stress is applied onto the pellet 2. On the other hand, the thermal expansion coefficient of the epoxy resin 13 is almost the same with that of a mold body 5 (epoxy resin), and thus the intensity of power cycles is not lowered. Therefore, the strength of tightening by the bolt 8 can be improved.
Abstract translation: 目的:通过在不降低动力循环强度的情况下增加螺栓的紧固强度,通过将底层树脂层形成为双层结构,其下层由与支撑基材具有大粘合性的第一树脂形成,并且其双 上层由对树脂成型体具有小粘合性的第二树脂形成。 构成:将通过将4重量%的液体或粉末硅树脂添加到液体环氧树脂中而制备的底涂层树脂滴在安装在散热器1上的半导体芯片2上,对其进行烘烤,由此树脂聚合, 组。 如此制备的树脂层具有双层结构,其中下层由环氧树脂13和硅树脂14的上层形成。当将如此制备的半导体器件的热或机械应力施加到固定在 通过螺栓8的布线基板9,即使当基板1变形时,硅树脂14也用作剥离材料,由此形成空间16,从而在颗粒2上不施加应力。另一方面, 环氧树脂13的热膨胀系数与模具体5(环氧树脂)的热膨胀系数几乎相同,因此功率循环的强度不降低。 因此,能够提高螺栓8的紧固强度。
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公开(公告)号:JPS58192400A
公开(公告)日:1983-11-09
申请号:JP6825383
申请日:1983-04-18
Applicant: Siemens Ag
Inventor: KURUTO GUROOSUMAN , YURUGEN BURIISUNAA , YOAHIMU SHITSUKAA
CPC classification number: H01L23/4006 , H01L23/32 , H01L25/115 , H01L25/16 , H01L2023/4025 , H01L2023/4031 , H01L2023/4062 , H01L2924/0002 , H01L2924/00
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公开(公告)号:JP2018039678A
公开(公告)日:2018-03-15
申请号:JP2016172606
申请日:2016-09-05
Applicant: 大日本印刷株式会社
Inventor: 倉持 悟
IPC: H01L23/15 , B23K26/382 , C03B33/09
Abstract: 【課題】内部に導電体を容易に形成することができる貫通孔の形成方法の提供。 【解決手段】第1面から第2面に対して貫通し孔内部において径が極小値を有する貫通孔を含む基板と、前記貫通孔の内部に配置された導電体と、を備え、前記貫通孔は、前記第1面から前記第2面までの区間のうち前記第1面から6.25%、18.75%、31.25%、43.75%、56.25%、68.75%、81.25%、93.75%の距離の位置における前記貫通孔の中心軸に対する内側面の傾斜角度(前記第1面側が拡がる角度を正の傾斜角度とする)の合計値が、8.0°以上である条件を満たす、貫通電極基板の製造方法。 【選択図】図1
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公开(公告)号:JP2018010990A
公开(公告)日:2018-01-18
申请号:JP2016139626
申请日:2016-07-14
Applicant: 株式会社村田製作所
Inventor: 神戸 勇貴
CPC classification number: H01L23/32 , H01F17/04 , H01F27/2823 , H01F27/30 , H01F2017/004 , H01G4/33 , H01L23/13 , H01L23/14 , H05K1/11 , H05K1/181 , H05K3/284 , H05K3/34 , H05K2201/1003
Abstract: 【課題】巻線に断線が発生する可能性を低減できる電子部品及び回路モジュールを提供する。 【解決手段】電子部品10は、コア12と、第1の巻線16aと、外部電極14a〜14dと、を備えており、コアの鍔部は、上側を向き、かつ、コアの巻芯部22よりも上側に位置する第1の面S1を有する鍔部本体26aと、第1の面よりも上側に向かって突出している第1の電極形成部28a及び第2の電極形成部28bと、を含んでいる。外部電極14aは、第1の電極形成部の第2の面S2a上に設けられ、かつ、第1の巻線と接続されており、第1の電極形成部、第2の電極形成部及び第1の面により囲まれた股部空間Sp1が形成されており、第1の巻線における巻芯部を離れてから外部電極に到達するまでの所定区間は、前側から見たときに、右上側に向かって延びていると共に、第1の巻線の線幅の全体において股部空間と重なる部分を有していない。 【選択図】図1
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公开(公告)号:JP6211215B2
公开(公告)日:2017-10-11
申请号:JP2016571468
申请日:2015-02-17
Applicant: インフィネオン テクノロジーズ ビポラー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト , Infineon Technologies Bipolar GmbH & Co. KG , シーメンス アクチエンゲゼルシヤフト , Siemens Aktiengesellschaft
Inventor: マリオ シェンク , イェンス プジィビラ , ライナー バーテルメス , イェアク ドアン
CPC classification number: H01L25/115 , H01L23/051 , H01L23/32 , H01L23/3675 , H01L23/4006 , H01L23/473 , H01L24/72 , H01L25/072 , H01L2924/1203 , H01L2924/1301 , H01L2924/13055
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