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    Manufacture of semiconductor device
    6.
    发明专利
    Manufacture of semiconductor device 失效
    半导体器件的制造

    公开(公告)号：JPS57124459A

    公开(公告)日：1982-08-03

    申请号：JP905181

    申请日：1981-01-26

    申请人： Hitachi Ltd

    发明人： OONUKI HITOSHI ,  TAMAMURA TAKEO ,  KUNIYA KEIICHI ,  CHIBA AKIO ,  FUNIYUU MASAO

    IPC分类号： H01L23/40 ,  H01L21/52 ,  H01L23/492

    CPC分类号： H01L23/4928 ,  H01L24/32 ,  H01L2924/01029

    摘要： PURPOSE:To bond a Cu-C complex and a radiating plate strongly within the range that the complex is not expanded by bonding a buffer plate and the radiating plate by using a solder material consisting of 15wt% Cu, 1-5wt% Ag and P. CONSTITUTION:The buffer plate and the radiating plate are bonded by using the solder material composed of 15wt% Cu, 1-5wt% Ag and P. The Cu-C complex is hardly expanded because both plates can be bonded at 700 deg.C or lower through the bonding method. The solder material of 15wt% Cu, 1-5wt% Ag and P is approximately equal to Ag in thermal conductivity, and does not form a large number of voids as solder. The Cu-C complex may be manufactured by knitting C fibers in a latticed shape, arranging the fibers in a Cu matrix shape at randum or spirally disposing them.

    摘要翻译： 目的：通过使用由15重量％的Cu，1-5重量％的Ag和P组成的焊料材料，通过使缓冲板和散热板接合而在复合体不膨胀的范围内使Cu-C复合物和散热板牢固地结合 构成：缓冲板和散热板通过使用由15重量％的Cu，1-5重量％的Ag和P组成的焊料材料结合。由于两个板可以在700℃粘合，所以Cu-C复合物几乎不膨胀 或更低。 15wt％Cu，1-5wt％Ag和P的焊料材料的导热率近似等于Ag，并且不会形成大量作为焊料的空隙。 Cu-C复合物可以通过编织格子状的C纤维来制造，将纤维以Cu矩阵形状排列成盘形或螺旋状地布置。

    Semiconductor device
    10.
    发明专利
    Semiconductor device 失效
    半导体器件

    公开(公告)号：JPS5778144A

    公开(公告)日：1982-05-15

    申请号：JP15388780

    申请日：1980-11-04

    申请人： Hitachi Ltd

    发明人： KIZAWA KENICHI ,  BABA NOBORU ,  TENNO HIROSHI

    IPC分类号： H01L21/52 ,  H01L23/492

    CPC分类号： H01L23/4928 ,  H01L24/01 ,  H01L2924/351 ,  H01L2924/00

    摘要： PURPOSE:To form a bonding structure of a semiconductor device having rigidity at low temperature and good electric characteristics by providing the prescribed solder materials for a semiconductor substrate and a supporting electrode and disposing and bonding solder material made of Sn or In between the soldering materials. CONSTITUTION:A Cu (or Ni) solder material 12 is provided at an Mo supporting electrode 10 soldered, for example, to a copper electrode 5, for example, in a flat diode 1, and Sn (or In) solder material 13 is interposed and bonded between the solder material 12 and a solder 11 made of, for example, aluminum (or any of Au, Pt and Cr). An aluminum electrode 6 is provided on the upper surface of a substrate 9, and is contacted under pressure via a W buffer plate 16. Since this bonding structure can be rigidly bonded at a low temperature (approx. 300 deg.C), it can reduce the thermal stress to the substrate 9, and preferable electrically contacting property can be contained without the conductive type of the substrate 9. Various types of material such as composite material in which carbon fiber is buried in W, Mo, Fe, Cu, Al, Fe-Ni alloy, Cu matrix can be applied to the electrode 10.

    摘要翻译： 目的：通过在半导体基板和支撑电极之间设置规定的焊锡材料并且在焊料之间设置和焊接由Sn或In制成的焊料，从而形成具有低温刚性和良好电特性的半导体器件的接合结构。 构成：在例如在平坦二极管1中焊接到例如铜电极5的Mo支持电极10处设置Cu（或Ni）焊料12，并且插入Sn（或In）焊料13 并且焊接在焊料12和由例如铝（或Au，Pt和Cr中的任一种）制成的焊料11之间。 在基板9的上表面上设置有铝电极6，并通过W缓冲板16在压力下接触。由于该接合结构可以在低温（约300℃）下刚性接合，所以可以 降低对基板9的热应力，并且可以不含基板9的导电型而包含优选的电接触性。各种类型的材料如碳纤维埋在W，Mo，Fe，Cu，Al中的复合材料 ，Fe-Ni合金，Cu基体可以施加到电极10上。