公开(公告)号：JP2013149907A

公开(公告)日：2013-08-01

申请号：JP2012011115

申请日：2012-01-23

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： WAKITA YASUYUKI ,  NAKAI MOTOO

IPC: H05K1/14 ,  B62D5/04 ,  H02K11/00

Abstract: PROBLEM TO BE SOLVED: To provide a wiring connection structure between two substrates which prevents a liquid from entering into a joint part between circuit wiring of a first electronic circuit board and a connection terminal of a second electronic circuit board formed by a flexible substrate.SOLUTION: A portion of a flexible substrate 70, which is located close to a tip at the control substrate 60 side, has: a tip (an overlapped part 70A) overlapped on a surface of a control substrate 60; and an inclination part 70B extending obliquely upward from a proximal end of the overlapped part 70A. Each circuit wiring 72 of the flexible substrate 70 has a wide connection terminal 72a in a tip at the overlapped part 70A side. Each connection terminal 72a is joined to a joined part 621a of wiring for terminal connection wiring 621 of the control substrate 60 by solder 91. A liquid entry prevention wall 80 is formed on the control substrate 60 so as to enclose the overlapped part 70A of the flexible substrate 70.

Abstract translation: 要解决的问题：提供两个基板之间的布线连接结构，其防止液体进入第一电子电路板的电路布线与由柔性基板形成的第二电子电路板的连接端子之间的接合部分。 ：位于控制基板60侧的尖端附近的柔性基板70的一部分具有：与控制基板60的表面重叠的前端（重叠部70A） 以及从重叠部70A的基端向斜上方延伸的倾斜部70B。 柔性基板70的每个电路布线72在重叠部分70A侧的尖端具有宽的连接端子72a。 每个连接端子72a通过焊料91与控制基板60的端子连接布线621的布线的接合部分621a接合。控制基板60上形成有液体入口防止壁80，以便包围该控制基板60的重叠部分70A 柔性基板70。

公开(公告)号：JP2012190912A

公开(公告)日：2012-10-04

申请号：JP2011051619

申请日：2011-03-09

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： WAKITA YASUYUKI

IPC: H01L21/60

CPC classification number: H01L2224/05624 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/4847 ,  H01L2224/48724 ,  H01L2224/78 ,  H01L2224/85181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/48 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive bonding device capable of preventing a wire from being drawn to a guide.SOLUTION: The bonding device comprises a wedge, and a guide 5 which feeds a wire member 2 toward the wedge. The guide 5 includes a passage 9 for passing the wire member 2, a ball 27 which comes into contact with the wire member 2 passing through the passage 9, and a housing chamber 26 which houses the ball 27. The housing chamber 26 has a first wall surface 31 inclining to approach the passage 9 toward the upstream side in the feeding direction D1 of the wire member 2, and a second wall surface 32 arranged on the downstream side in the feeding direction D1 for the first wall surface 31 so as to allow rotation of the ball 27. The ball 27 prevents the wire member 2 from being displaced in the direction opposite from the feeding direction D1 of the wire member 2.

Abstract translation: 要解决的问题：提供一种廉价的接合装置，其能够防止电线被引导到引导件。 解决方案：接合装置包括楔形件和引导件5，引导件5将线材2向楔形件供给。 引导件5包括用于通过线构件2的通道9，与通过通道9的线构件2接触的球27和容纳球27的容纳室26.壳体室26具有第一 倾斜面朝向线材2的供给方向D1的上游侧的通道9，以及配置在第一壁面31的供给方向D1的下游侧的第二壁面32，以允许 球27的旋转防止线构件2沿着与线构件2的馈送方向D1相反的方向移位。版权所有（C）2013，JPO和INPIT

公开(公告)号：JP2007216356A

公开(公告)日：2007-08-30

申请号：JP2006041842

申请日：2006-02-20

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： SUGIYAMA TOYOKI ,  WAKITA YASUYUKI ,  ONO TAKASHI

IPC: B24B49/04 ,  B24B5/06

Abstract: PROBLEM TO BE SOLVED: To provide an internal grinding machine capable of performing grinding considered with bending amount of a grinding wheel spindle to improve machining quality.
SOLUTION: This grinding machine is provided with a display means 13 to display a difference between sliding amount and actually cutting amount of an infeed table 2 as accumulation amount. At least one of the accumulation amount after completing a rough process and the accumulation amount after completing a finishing process is displayed by the display means 13. The accumulation amount after completing the rough process = (X1-X0)-Y1 and the accumulation amount after completing the finishing process = (X2-X0)-Y2 are determined by taking the position of the infeed table 2 after completing the rough process as X1, grinding residual amount by an in-process gage after completing the rough process as Y1, the position of the infeed table 2 after completing the finishing process as X2, grinding residual amount by the in-process gage after completing the finishing process as Y2 and the position of the infeed table 2 after completing spark-out as X0.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够以磨轮主轴的弯曲量进行磨削的内磨床，以提高加工质量。 解决方案：该磨床设置有显示装置13，用于显示作为累积量的进给台2的滑动量和实际切割量之间的差异。 显示装置13显示完成粗略处理后的累积量中的至少一个和完成精加工处理后的积累量。完成粗加工后的积累量=（X1-X0）-Y1和后的累积量 完成整理过程=（X2-X0）-Y2是通过在完成粗加工之后将进给台2的位置作为X1来确定的，在粗加工完成后将磨削剩余量作为Y1， 在完成精加工作为X2之后，通过完成精加工后的工艺量规作为Y2，以及在完成火花喷射之后的进给台2的位置为X0时，研磨剩余量。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2014027005A

公开(公告)日：2014-02-06

申请号：JP2012163750

申请日：2012-07-24

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： WAKITA YASUYUKI ,  NAKAI MOTOO ,  SEGAWA MASAYA

IPC: H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H02P27/06

Abstract: PROBLEM TO BE SOLVED: To provide an insulation gate field effect transistor capable of interrupting conduction of a drain terminal and a source terminal in the case of abnormality, and to provide a motor controller incorporating the transistor.SOLUTION: A drain region 32 connected with a drain terminal 37 and a source region 33 connected with a source terminal 38 are formed, at an interval, on a silicon semiconductor substrate 31, and a gate electrode 36 is formed on the surface of a channel region 34 via an oxide film 35. In an FET 18a, the whole channel region 34 in the silicon semiconductor substrate 31 is divided into two by trenches 43, 44, together with the gate electrode 36, at the intermediate position of the drain region 32 and source region 33. A wire 41 for conducting two channel regions 34 thus divided is provided. The wire 41 is cut in a predetermined high temperature region.

Abstract translation: 要解决的问题：提供一种能够在异常情况下中断漏极端子和源极端子的导通的绝缘栅场效应晶体管，并提供并入晶体管的电机控制器。解决方案：与 漏极端子37和与源极端子38连接的源极区域33以一定间隔形成在硅半导体基板31上，并且通过氧化膜35在沟道区域34的表面上形成栅极电极36。 FET 18a中，硅半导体衬底31中的整个沟道区34在沟道区32和源极区33的中间位置处与栅电极36一起被沟槽43,44分成两个。线41用于 提供这样分配的两个通道区域34。 线41被切割成预定的高温区域。

公开(公告)号：JP2014110339A

公开(公告)日：2014-06-12

申请号：JP2012264489

申请日：2012-12-03

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： WAKITA YASUYUKI

IPC: H01L21/336 ,  H01H37/52 ,  H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H02M7/48 ,  H02P27/06

Abstract: PROBLEM TO BE SOLVED: To provide an insulated gate field effect transistor which can block conduction between a drain terminal and a source terminal at the time of abnormality; and provide a motor control device incorporating the insulated gate field effect transistor.SOLUTION: An FET 54A comprises a source terminal 65, a drain terminal 66, a silicon semiconductor 60, an insulation region 64, gate electrodes 67A, 67B and a conductive component 70. The silicon semiconductor 60 includes a drain region 62 connected to the drain terminal 66; a source region 61 which is formed at a distance from the drain region 62 and connected to the source terminal 65; and channel regions 63A, 63B which are formed between the drain region 62 and the source region 61 and separated into two by the insulation region 64. The conducive component 70 electrically connects the channel regions 63A, 63B. When a temperature reaches a preset high temperature region, the conductive component 70 separates from the channel region 63B and enters a space 64A of the insulation region 64.

Abstract translation: 要解决的问题：提供一种绝缘栅场效应晶体管，其可以在异常时阻止漏极端子与源极端子之间的导通; 并提供并入绝缘栅场效应晶体管的电机控制装置。解决方案：FET 54A包括源极端子65，漏极端子66，硅半导体60，绝缘区域64，栅极电极67A，67B和导电部件70 硅半导体60包括连接到漏极端子66的漏区62; 源极区域61，其形成在与漏极区域62一定距离处并连接到源极端子65; 以及沟道区域63A，63B，其形成在漏极区域62和源极区域61之间并且被绝缘区域64分离成两个。导电部件70电连接沟道区域63A，63B。 当温度达到预设的高温区域时，导电部件70与沟道区域63B分离并进入绝缘区域64的空间64A。

公开(公告)号：JP2014022556A

公开(公告)日：2014-02-03

申请号：JP2012159713

申请日：2012-07-18

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： WAKITA YASUYUKI

IPC: H01L21/301 ,  B23K26/00 ,  B23K26/36 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can suppress deterioration in yield caused by strength poverty of a semiconductor element.SOLUTION: A semiconductor element manufacturing method comprises: providing a reinforcement part 27 on a silicon wafer on which a plurality of semiconductor element are formed for reinforcing the wafer; subsequently cutting the silicon wafer reinforced by the reinforcement part 27 to divide the plurality of semiconductor elements into individual semiconductor elements; and subsequently removing the reinforcement part 27 from each cut semiconductor element.

Abstract translation: 要解决的问题：提供一种半导体元件的制造方法，其能够抑制半导体元件的强度劣化引起的产量劣化。解决方案：半导体元件制造方法包括：在硅晶片上设置加强部27， 形成用于加强晶片的半导体元件; 随后切割由加强部分27加强的硅晶片，以将多个半导体元件分成单独的半导体元件; 并且随后从每个切割半导体元件移除加强部分27。

公开(公告)号：JP2012125058A

公开(公告)日：2012-06-28

申请号：JP2010273760

申请日：2010-12-08

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： WAKITA YASUYUKI ,  NAKAI MOTOO

IPC: H02K11/00 ,  B62D5/04 ,  H02K5/22

Abstract: PROBLEM TO BE SOLVED: To provide a motor controller which is small and has excellent heat radiation.SOLUTION: A space in a motor housing 24 is divided into a motor chamber 45 and a control chamber 46 by a partition wall 44. An ECU 15 serving as a motor controller is housed in the control chamber 46. The motor housing 24 has first and second inner wall surfaces 56, 57 which intersects to form a V shape. A first multilayer circuit board 51 is arranged along the first inner wall surface 56, and a second multiplayer circuit board 52 is arranged along the second inner wall surface 57. First side edge parts 51a, 52a of the both multilayer circuit boards 51, 52, which obliquely face each other, are connected by a curved connection member 59. The connection member 59 and conductor patterns of the multilayer circuit boards 51, 52 are made of a single material, and the connection member 59 is integrally formed with the conductor patterns of the multilayer circuit boards 51, 52.

Abstract translation: 要解决的问题：提供一种体积小且热辐射优异的电机控制器。 解决方案：电动机壳体24中的空间通过分隔壁44分成电动机室45和控制室46.作为电动机控制器的ECU15容纳在控制室46中。电动机壳体24 具有相交以形成V形的第一和第二内壁表面56,57。 第一多层电路板51沿着第一内壁表面56布置，第二多层电路板52沿着第二内壁表面57布置。两个多层电路板51,52的第一侧边缘部分51a，52a， 彼此倾斜地相互连接的连接构件59和多层电路板51,52的导体图案由单个材料制成，连接构件59与导体图案一体形成， 多层电路板51,52。版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2014165250A

公开(公告)日：2014-09-08

申请号：JP2013033181

申请日：2013-02-22

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： TANNO SATOSHI ,  WAKITA YASUYUKI

IPC: H01L27/04 ,  H01L21/336 ,  H01L21/82 ,  H01L21/822 ,  H01L29/78

CPC classification number: H01L29/7838 ,  H01L27/0251 ,  H01L27/0288 ,  H01L29/1033 ,  H01L29/42376 ,  H01L29/66484 ,  H01L29/66568 ,  H01L29/7831

Abstract: PROBLEM TO BE SOLVED: To provide an insulated gate field effect transistor which can inhibit the occurrence of short-circuit failure; and provide a manufacturing method of the transistor.SOLUTION: An FET 1 comprises a semiconductor substrate 10, a gate insulation film 20, a gate electrode 30 and a conductive member 60. The semiconductor substrate 10 has an insulation groove 11 for dividing a channel region 14 into a first channel region 14A on a drain region 12 side and a second channel region 14B on a source region 13 side. The conductive member 60 is supported by a drain side end face 11A and a source side end face 11B of the insulation groove 11. The conductive member 60 is cut at above a predetermined temperature.

Abstract translation: 要解决的问题：提供可以抑制短路故障发生的绝缘栅场效应晶体管; 并提供晶体管的制造方法。解决方案：FET1包括半导体衬底10，栅极绝缘膜20，栅电极30和导电构件60.半导体衬底10具有绝缘槽11，用于将沟道区域 14进入漏极区域12侧的第一沟道区域14A和源极区域13侧的第二沟道区域14B。 导电构件60由绝缘槽11的漏极侧端面11A和源极侧面11B支撑。导电构件60在预定温度以上被切断。

公开(公告)号：JP2012023858A

公开(公告)日：2012-02-02

申请号：JP2010159736

申请日：2010-07-14

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： WAKITA YASUYUKI

IPC: H02K11/00 ,  B62D5/04 ,  H05K7/14 ,  H05K7/20

CPC classification number: H05K1/0206 ,  B62D5/0406 ,  H05K1/113 ,  H05K3/0061 ,  H05K2201/09481 ,  H05K2201/10166 ,  H05K2201/10272

Abstract: PROBLEM TO BE SOLVED: To provide a controller which can ensure a larger space for mounting electric elements while minimizing increase in size.SOLUTION: A circuit board unit 61 of an ECU12 includes a top face 61a on which a semiconductor element 77 is mounted, an undersurface 61b opposed to the top face 61a, and a notch 91 formed under the top face 61a. A power supply module 62 includes a conductive projection piece 101 inserted into the notch 91 in order to support the circuit board unit 61 and connected electrically with the semiconductor element 77, and an insulating main body 65 which holds the projection piece 101.

Abstract translation: 要解决的问题：提供一种控制器，其可以确保用于安装电气元件的更大空间，同时最小化尺寸增加。 解决方案：ECU12的电路板单元61包括其上安装有半导体元件77的顶面61a，与顶面61a相对的下表面61b和形成在顶面61a下方的凹口91。 电源模块62包括插入到凹口91中以便支撑电路板单元61并与半导体元件77电连接的导电突起片101和保持突起片101的绝缘主体65。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010186461A

公开(公告)日：2010-08-26

申请号：JP2009167374

申请日：2009-07-16

Applicant: Jtekt Corp ,  株式会社ジェイテクト

Inventor： HATTORI AKIRA ,  WAKITA YASUYUKI

IPC: G05B19/404 ,  B23Q15/12

Abstract: PROBLEM TO BE SOLVED: To provide a teaching signal generating method capable of sufficiently and easily compensating the dynamics of a servo mechanism including feed forward control, and a track control device using it or the like.
SOLUTION: Prior to a working operation, a frequency response analysis part 40 supplies a command value of sine waves to the servo mechanism 112, obtains the frequency response measurement data Drp, fits a rational function G(s) as a fractional expression comprising a linear numerator and a quadratic denominator to the frequency response measurement data Drp, and thus determines the values of coefficients a
1 , a
2 and b
1 of the rational function. In the working operation, a correction filter 24 prepares correction data Dmw for working by executing filtering processing equivalent to the reciprocal of the function G(s) using the values of the coefficients a
1 , a
2 and b
1 to interpolation data Dip obtained from shape data Dsp. The correction data Dmw for working are supplied to the servo mechanism 112 as teaching signals indicating the command value of the track control of a tool 10.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供能够充分且容易地补偿包括前馈控制的伺服机构的动态的教学信号生成方法，以及使用它的轨道控制装置等。 解决方案：在工作操作之前，频率响应分析部件40向伺服机构112提供正弦波的指令值，获得频率响应测量数据Drp，将有理函数G（s）拟合为分数表达式 包括对频率响应测量数据Drp的线性分子和二次分母，从而确定系数a 1 ， 2 和b SB>的理性函数。 在工作操作中，校正滤波器24使用系数a 1 ，的值执行与功能G（s）的倒数相等的滤波处理，准备校正数据Dmw， 2 和b 1 到从形状数据Dsp获得的插值数据Dip。 作为用于指示工具10的轨迹控制的指令值的示教信号，作业的校正数据Dmw被提供给伺服机构112.（C）2010，JPO＆INPIT