Method for producing structure and method for producing liquid discharge head
    2.
    发明专利
    Method for producing structure and method for producing liquid discharge head 有权
    生产结构的方法和生产液体排放头的方法

    公开(公告)号:JP2012030579A

    公开(公告)日:2012-02-16

    申请号:JP2011135103

    申请日:2011-06-17

    发明人: ISHIKURA HIROE

    IPC分类号: B41J2/05

    CPC分类号: G03F7/038 G03F1/56 G03F7/039

    摘要: PROBLEM TO BE SOLVED: To provide a method for producing a fine structure with high precision and in a high yield by simplifying a production process.SOLUTION: A method for producing a structure includes steps of, in this order, preparing a substrate composed of a first resin layer and a second resin layer laminated in this order, the first resin layer being made of a positive photosensitive resin having positive photosensitivity to light having a wavelength of 280 nm or more, and the second resin layer containing an anthracene compound, partially exposing the second resin layer to light having a wavelength of 300 nm or more, radiating light having a wavelength of 280 nm or more to the first resin layer through the exposed portions of the second resin layer using the unexposed portions of the second resin layer as a mask, thereby exposing the first resin layer to light, and removing the exposed portions of the first resin layer to form a structure.

    摘要翻译: 要解决的问题:通过简化生产过程,提供一种高精度和高产率的精细结构的制造方法。 解决方案:一种制造结构的方法,其特征在于,依次制备由第一树脂层和第二树脂层构成的基板,第一树脂层由正型感光性树脂构成,该正性感光性树脂具有 具有280nm以上的波长的光的正光敏性,以及含有蒽化合物的第二树脂层,将第二树脂层部分地曝光到波长为300nm以上的光,照射波长为280nm以上的光 使用第二树脂层的未曝光部分作为掩模,通过第二树脂层的暴露部分向第一树脂层施加第一树脂层,从而将第一树脂层暴露于光,并且除去第一树脂层的暴露部分以形成结构 。 版权所有(C)2012,JPO&INPIT

    Pigment - recording material having a radiation-sensitive layer which is colored

    公开(公告)号:JP3989706B2

    公开(公告)日:2007-10-10

    申请号:JP2001319372

    申请日:2001-10-17

    CPC分类号: G03F1/56 G03F7/105

    摘要: The invention relates to a recording material having a substrate and a negative-working, radiation-sensitive layer which contains a diazonium salt, at least a first polymeric binder, which is film-forming, and organic coloured pigments, on the surface of which an organic polymeric dispersant has been adsorbed and which are additionally dispersed in a second polymeric binder which does not permanently combine with the pigments chemically or physically. The first and the second polymeric binder may be the same or different. The dispersant generally has groups, in particular primary, secondary or tertiary amino groups or derivatives thereof, which act as anchor groups on the coloured pigment particles. The pigments themselves are preferably phthalocyanine pigments. As a result of the predispersing, aggregation of the pigment particles is effectively prevented so that uniform coloration of the radiation-sensitive layer is achieved. During development of the imagewise exposed recording materials, the coloured pigment particles form virtually no insoluble precipitates. In the prepared printing plates, the printing parts are distinguished from the substrate material through being clearly visible and having high contrast.

    Manufacturing method for semiconductor integrated circuit device
    7.
    发明专利
    Manufacturing method for semiconductor integrated circuit device 有权
    半导体集成电路器件的制造方法

    公开(公告)号:JP2003077797A

    公开(公告)日:2003-03-14

    申请号:JP2001263735

    申请日:2001-08-31

    CPC分类号: G03F1/36 G03F1/56

    摘要: PROBLEM TO BE SOLVED: To improve pattern accuracy of a semiconductor integrated circuit device. SOLUTION: In the case of replacing a normal photomask with a resist mask, in setting of a plane dimension of a light shielding pattern 2 composed of a resist film, correction of subtracting a correction amount L from the plane dimension of the light shielding pattern 2 composed of a metal corresponding to it is performed. Inversely, in the case of replacing the resist mask with a normal mask, in the setting of the plane dimension of the light shielding pattern 2 composed of the metal, the correction of adding the correction amount L to the plane dimension of the light shielding pattern 3 composed of the resist film corresponding to it is performed.

    摘要翻译: 要解决的问题:提高半导体集成电路器件的图案精度。 解决方案:在用抗蚀剂掩模替换普通光掩模的情况下,在由抗蚀剂膜构成的遮光图案2的平面尺寸的设定中,从遮光图案2的平面尺寸减去校正量L的校正 由与其对应的金属构成。 相反,在用正常掩模代替抗蚀剂掩模的情况下,在由金属构成的遮光图案2的平面尺寸的设定中,校正量L相对于遮光图案的平面尺寸的校正 执行由与其对应的抗蚀剂膜组成的3。