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    Rf (radio frequency) switch
    3.
    发明专利
    Rf (radio frequency) switch 审中-公开

    公开(公告)号：JP2013526214A

    公开(公告)日：2013-06-20

    申请号：JP2013508002

    申请日：2011-04-14

    申请人： アッコ セミコンダクター インコーポレイテッドAcco Semiconductor, Inc. ,  デニス エイ マスリアMASLIAH, Denis A.

    发明人： エイ マスリア デニス

    IPC分类号： H04B1/40

    CPC分类号： H01Q1/50 ,  H01P1/127 ,  H01P1/15 ,  H04B1/44

    摘要： RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.

    電気機械素子およびそれを用いた電気機器
    5.
    发明专利
    電気機械素子およびそれを用いた電気機器 有权

    公开(公告)号：JPWO2009063627A1

    公开(公告)日：2011-03-31

    申请号：JP2009516771

    申请日：2008-11-12

    申请人： パナソニック株式会社

    发明人： 内藤　康幸 ,  康幸 内藤

    IPC分类号： H01H59/00 ,  B81B3/00

    CPC分类号： H01H59/0009 ,  B81B3/0086 ,  H01P1/127

    摘要： 電気機械素子に高い電力の信号を入力した場合、静電気力により可動電極が意図せず自動的に駆動する現象が発生する。このような現象を防止し、信頼性の高い電気機械素子を実現する。本発明の電気機械素子は、基板上に形成された電気機械素子であって、可動電極とギャップを介して形成された信号電極と駆動電極を具備する。可動電極と駆動電極の間に引力を加えることにより、可動電極は信号電極と接触可能となる。高周波信号の入力端子側に可動電極と駆動電極が絶縁層を介して対向することにより、大きな静電容量が形成される。その結果、高電力信号が入力される場合でも可動電極と駆動電極との間の電位差が低減されるため、高信頼性の電気機械素子が実現可能となる。

    Switch array and method for manufacturing the same
    8.
    发明专利
    Switch array and method for manufacturing the same 审中-公开
    开关阵列及其制造方法

    公开(公告)号：JP2008118699A

    公开(公告)日：2008-05-22

    申请号：JP2007335122

    申请日：2007-12-26

    申请人： Hrl Lab Llc ,  エイチアールエル ラボラトリーズ,エルエルシーHrl Laboratories, Llc

    发明人： SIEVENPIPER DANIEL F

    IPC分类号： H01P1/12 ,  H01P1/10 ,  H01P5/04 ,  H01Q3/24 ,  H01Q13/08

    CPC分类号： H01P1/10 ,  H01P1/127 ,  H01P5/04 ,  H01Q13/085

    摘要： PROBLEM TO BE SOLVED: To provide a mono-pole multi-input switches whose parasitic reactance is low, and an antenna with these switches being integrated therein.
    SOLUTION: A switch array comprises a plurality of MEMS switches arrayed on a substrate about a center position, with each MEMS switch being arranged on a common imaginary circle centered on the center position. Additionally, each MEMS switch is preferably arranged in equidistant manner, along the circumference of the imaginary circle. Contacts are provided that connect the RF port of each of the MEMS switches with the center position.
    COPYRIGHT: (C)2008,JPO&INPIT

    摘要翻译： 要解决的问题：提供寄生电抗低的单极多输入开关，以及将这些开关集成在其中的天线。 解决方案：开关阵列包括围绕中心位置排列在基板上的多个MEMS开关，每个MEMS开关布置在以中心位置为中心的共同假想圆上。 此外，每个MEMS开关优选地沿着假想圆的圆周等距离地布置。 提供了将每个MEMS开关的RF端口与中心位置连接的触点。 版权所有（C）2008，JPO＆INPIT

    Rfmems switch
    9.
    发明专利
    Rfmems switch 有权

    公开(公告)号：JP4066928B2

    公开(公告)日：2008-03-26

    申请号：JP2003347181

    申请日：2003-10-06

    申请人： 株式会社村田製作所

    发明人： 浩史 川合

    IPC分类号： H01P1/12 ,  H01H59/00

    CPC分类号： H01H59/0009 ,  H01G5/16 ,  H01G5/40 ,  H01H2001/0078 ,  H01H2001/0084 ,  H01P1/127

    摘要： An RF-MEMS switch includes a plurality of movable electrodes disposed with a space provided therebetween in the direction of RF signal conduction of an RF signal-conducting unit which is provided above the RF signal-conducting unit. A movable electrode displacing unit for displacing all the movable electrodes at the same time in the same direction towards or away from the RF signal-conducting unit is provided. The electrical length for the RF signal-conducting unit sandwiched between the movable electrodes is determined such that the amplitude of a combined signal including signals reflected in positions of the RF signal-conducting unit facing the movable electrodes is less than the amplitude of each of reflected signals reflected in positions of the RF signal-conducting unit facing the movable electrodes when the movable electrodes are displaced away from the RF signal-conducting unit and signal conduction of the RF signal-conducting unit is switched on.

    Rfmems element
    10.
    发明专利
    Rfmems element 有权

    公开(公告)号：JP3818176B2

    公开(公告)日：2006-09-06

    申请号：JP2002060765

    申请日：2002-03-06

    申请人： 株式会社村田製作所

    发明人： 義宏 小中 ,  真司 小林 ,  浩史 川合

    IPC分类号： B81B3/00 ,  H01P1/12 ,  H01H59/00

    CPC分类号： H01P1/127 ,  H01G5/16 ,  H01G5/40 ,  H01H59/0009

    摘要： An RF-MEMS device includes a substrate, a coplanar line arranged on the substrate, a movable element disposed above the coplanar line, and a movable electrode arranged on the movable element so as to face the coplanar line. The movable element includes a high-resistivity semiconductor functioning as an insulator for an RF signal and functioning as an electrode for a low-frequency signal and a DC signal. Electrostatic attraction caused by a DC voltage applied between the movable element functioning as the electrode and a fixed electrode displaces the movable element towards the fixed electrode, thereby varying the capacitance between the movable electrode and the coplanar line. The movable element made of a high-resistivity semiconductor has dielectric loss characteristics in which the dielectric loss decreases as the frequency of a signal increases, thus readily reducing the dielectric loss of an RF signal. An RF-MEMS device includes a substrate, a coplanar line arranged on the substrate, a movable element disposed above the coplanar line, and a movable electrode arranged on the movable element so as to face the coplanar line. The movable element includes a high-resistivity semiconductor functioning as an insulator for an RF signal and functioning as an electrode for a low-frequency signal and a DC signal. Electrostatic attraction caused by a DC voltage applied between the movable element functioning as the electrode and a fixed electrode displaces the movable element towards the fixed electrode, thereby varying the capacitance between the movable electrode and the coplanar line. The movable element made of a high-resistivity semiconductor has dielectric loss characteristics in which the dielectric loss decreases as the frequency of a signal increases, thus readily reducing the dielectric loss of an RF signal.