公开(公告)号：KR1020090017422A

公开(公告)日：2009-02-18

申请号：KR1020080077355

申请日：2008-08-07

申请人： 엘피다 메모리, 아이엔씨. ,  가부시키가이샤 히타치세이사쿠쇼

发明人： 덴메이히로유끼 ,  니시구니히꼬 ,  나까야스히로 ,  히사노나에 ,  이께다히로아끼 ,  이시노마사까즈

IPC分类号： H01L23/12

CPC分类号： H01L24/73 ,  H01L21/76898 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/50 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/75753 ,  H01L2224/8113 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83871 ,  H01L2224/83907 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/27

摘要： A bonding method and the laminate of the semiconductor substrate manufactured thereby are provided to prevent the mismatch of wafer and bond the bump and the pad. The interlayer adhesive is coated between the side having the pad of the first semiconductor substrate and the side having the bump of the second semiconductor substrate to interconnect each other. The location of the second semiconductor substrate and the first semiconductor substrate are adjusted. In the second process, the adhesive(27) is coated on the first semiconductor substrate whose location is adjusted and the neighboring of the second semiconductor substrate and then it is cured. Thereafter, the first semiconductor substrate and the second semiconductor substrate are heated up and compressed to connect the pad and the bump.

摘要翻译： 提供了一种接合方法和由其制造的半导体衬底的层叠体，以防止晶片失配并结合凸起和焊盘。 层间粘合剂涂覆在具有第一半导体衬底的焊盘的侧面和具有第二半导体衬底的凸块的一侧彼此互连。 调整第二半导体衬底和第一半导体衬底的位置。 在第二工序中，将粘合剂（27）涂布在其位置被调整的第一半导体基板和第二半导体基板的相邻部分上，然后固化。 此后，将第一半导体衬底和第二半导体衬底加热并压缩以连接焊盘和凸块。

公开(公告)号：KR1020060064651A

公开(公告)日：2006-06-13

申请号：KR1020067003315

申请日：2004-06-29

申请人： 인터내셔널 비지네스 머신즈 코포레이션

发明人： 포지,버나드,에이치. ,  프라사드,챈드리카 ,  유,로이

IPC分类号： H01L21/60

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L23/24 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/562 ,  H01L24/81 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/81001 ,  H01L2224/81005 ,  H01L2224/81136 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83365 ,  H01L2224/83907 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/05599

摘要： A method is described for forming an integrated structure, including a semiconductor device and connectors for connecting to a motherboard. A first layer (26) is formed on a plate (23) transparent to ablating radiation, and a second layer (32) on the semiconductor device (31). The first layer has a first set of conductors (27) connecting to bonding pads (27p), which are spaced with a first spacing distance in accordance with a required spacing of connections to the motherboard. The second layer has a second set of conductors (33) connecting to the semiconductor device. The first layer and second layer are connected using a stud/via connectors (29, 36) having spacing less than that of the bonding pads. The semiconductor device is thus attached to the first layer, and the first set and second set of conductors are connected through the studs. The interface between the first layer and the plate is ablated by ablating radiation (45) transmitted through the plate, thereby detaching the plate. The connector structures (47, 48, 49) are then attached to the bonding pads. This method permits fabrication of a high-density packaged device with reduced cost.

摘要翻译： 描述了一种用于形成集成结构的方法，包括半导体器件和用于连接到母板的连接器。 第一层（26）形成在对烧蚀辐射透明的板（23）上，以及在半导体器件（31）上形成第二层（32）。 第一层具有连接到接合焊盘（27p）的第一组导体（27），其按照与主板的连接所需的间隔具有第一间隔距离。 第二层具有连接到半导体器件的第二组导体（33）。 使用具有小于接合焊盘的间距的螺柱/通孔连接器（29,36）来连接第一层和第二层。 因此，半导体器件被附接到第一层，并且第一组和第二组导体通过螺柱连接。 通过烧蚀透过板的辐射（45）来消除第一层和板之间的界面，从而分离板。 然后将连接器结构（47,48,49）附接到接合焊盘。 该方法允许以低成本制造高密度封装装置。