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公开(公告)号:KR101894125B1
公开(公告)日:2018-08-31
申请号:KR1020147033140
申请日:2012-09-14
申请人: 르네사스 일렉트로닉스 가부시키가이샤
CPC分类号: H01L21/486 , H01L21/561 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/295 , H01L23/3107 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L23/538 , H01L24/03 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/03 , H01L25/065 , H01L25/0657 , H01L25/07 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/68331 , H01L2224/03002 , H01L2224/0401 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16238 , H01L2224/27312 , H01L2224/27334 , H01L2224/2741 , H01L2224/29006 , H01L2224/29007 , H01L2224/29012 , H01L2224/29015 , H01L2224/2919 , H01L2224/32013 , H01L2224/32014 , H01L2224/32058 , H01L2224/32059 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/73204 , H01L2224/753 , H01L2224/75315 , H01L2224/81001 , H01L2224/81191 , H01L2224/81203 , H01L2224/81447 , H01L2224/81815 , H01L2224/81907 , H01L2224/83001 , H01L2224/83192 , H01L2224/83203 , H01L2224/8321 , H01L2224/8385 , H01L2224/83862 , H01L2224/83906 , H01L2224/83907 , H01L2224/92 , H01L2224/9211 , H01L2224/92242 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06565 , H01L2225/06568 , H01L2924/07802 , H01L2924/07811 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2224/11 , H01L21/304 , H01L2224/03 , H01L21/78 , H01L2221/68381 , H01L21/4825 , H01L2224/27 , H01L2924/01047
摘要: 배선기판위에, 평면으로보았을때 평면사이즈가다른제1 반도체칩과제2 반도체칩을, 접착재를개재하여각각적층하는반도체장치의제조방법으로서, 상대적으로평면사이즈가작은제1 반도체칩 위에상대적으로평면사이즈가큰 제2 반도체칩을탑재한다. 또한, 제1 및제2 반도체칩을탑재한후, 제1 및제2 반도체칩을수지로밀봉한다. 여기서, 제2 반도체칩과배선기판의간극은, 수지로밀봉하기전에, 제1 및제2 반도체칩을탑재할때 사용한접착재로미리막혀있는것이다.
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公开(公告)号:KR101853165B1
公开(公告)日:2018-04-27
申请号:KR1020147030022
申请日:2013-03-06
申请人: 데쿠세리아루즈 가부시키가이샤
发明人: 모리야마,히로노부
CPC分类号: H01L21/78 , C09J7/00 , C09J7/10 , C09J2201/134 , C09J2201/36 , C09J2203/326 , H01L21/563 , H01L21/6836 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/91 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2221/68377 , H01L2224/11002 , H01L2224/13082 , H01L2224/13111 , H01L2224/13147 , H01L2224/16057 , H01L2224/16145 , H01L2224/16225 , H01L2224/27002 , H01L2224/27436 , H01L2224/29005 , H01L2224/29082 , H01L2224/2929 , H01L2224/29386 , H01L2224/29387 , H01L2224/29388 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81193 , H01L2224/81203 , H01L2224/81204 , H01L2224/81805 , H01L2224/81815 , H01L2224/81855 , H01L2224/83191 , H01L2224/83203 , H01L2224/83204 , H01L2224/83862 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2924/01322 , H01L2924/14 , Y10T403/479 , H01L2924/00 , H01L2224/11 , H01L2224/27 , H01L2924/01082 , H01L2924/01083 , H01L2924/01047 , H01L2924/01029 , H01L2924/01051 , H01L2924/0665 , H01L2924/207 , H01L2224/81 , H01L2224/83 , H01L2924/05442 , H01L2924/05341 , H01L2924/0532
摘要: 대향하는전극과의양호한접합을얻을수 있는회로접속재료및 이것을사용한반도체장치의제조방법을제공한다. 반도체칩(10)측에접착되는제1 접착제층(21)과, 제1 접착제층(21)의최저용융점도도달온도보다도높은최저용융점도도달온도를갖는제2 접착제층(22)이적층된회로접속재료(20)를사용한다. 이회로접속재료(20)가부착된반도체칩(10)을회로기판(30)에탑재했을때, 제1 접착제층(21)의두께 Hb1이하기식 (1)을만족하는범위인것에의해, 대향하는전극과의양호한접합을얻을수 있다.
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公开(公告)号:KR1020170048614A
公开(公告)日:2017-05-08
申请号:KR1020177011362
申请日:2013-06-14
申请人: 히타치가세이가부시끼가이샤
CPC分类号: C09J11/04 , C08K3/08 , C08K7/00 , C08K2003/0806 , C08K2003/0893 , C08K2201/001 , C09J1/00 , C09J9/02 , H01B1/22 , H01L23/49579 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/2929 , H01L2224/29318 , H01L2224/29339 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83203 , H01L2224/83862 , H01L2224/92247 , H01L2924/00014 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要: 은원자를함유하는은 입자및 금속아연을함유하는아연입자를포함하는접착제조성물로서, 그접착제조성물에있어서의고형분중의전(全) 천이금속원자에대하여, 은원자의함유량이 90질량% 이상이며, 아연원자의함유량이 0.01질량% 이상 0.6질량% 이하인접착제조성물.
摘要翻译: 从eunwon含有是一种粘合剂组合物包括含有颗粒和金属锌,相对于固体含量之前(全)在粘合剂组合物的过渡金属原子的锌颗粒和eunwon方含量大于90质量%,锌 其中原子的含量为0.01质量%以上且0.6质量%以下。
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公开(公告)号:KR101709689B1
公开(公告)日:2017-02-23
申请号:KR1020140178602
申请日:2014-12-11
申请人: 주식회사 엘지화학
IPC分类号: C09J11/08 , C09J11/06 , C09J133/04 , C09J7/02 , H01L21/58
CPC分类号: C09J11/08 , C09J5/00 , C09J7/20 , C09J133/00 , C09J2203/326 , C09J2205/302 , C09J2205/31 , C09J2433/00 , H01L21/6835 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2221/68336 , H01L2221/68377 , H01L2221/68381 , H01L2224/27003 , H01L2224/271 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/83203 , H01L2224/83204 , H01L2224/83862 , H01L2224/92 , H01L2224/94 , H01L2924/3512 , H01L2924/0665 , H01L2224/27 , H01L2924/00012 , H01L21/78 , H01L2224/83
摘要: 본발명은 (메타)아크릴레이트계작용기및 비극성작용기를포함한고분자, 불소를 1이상포함하는 (메타)아크릴레이트계고분자및 반응성작용기를포함하는실리콘변성 (메타)아크릴레이트계고분자로이루어진군에서선택된 1종이상의고분자를포함하는고분자첨가제; 점착바인더; 및광개시제;를포함하고, 상기점착바인더대비상기고분자첨가제의중량비가 0.01% 내지 4.5%인, 다이싱필름점착층형성용조성물과상기조성물을포함하는점착층을포함하는다이싱필름과상기다이싱필름을포함하는, 다이싱다이본딩필름과상기다이싱다이본딩필름을이용하는반도체웨이퍼의다이싱방법에관한것이다.
摘要翻译: 提供了一种用于形成切割膜的粘合剂层的组合物,其包括:包含至少一种选自包含(甲基)丙烯酸酯官能团和非极性官能团的聚合物的聚合物的聚合物添加剂 ,含有至少一个氟的(甲基)丙烯酸酯系聚合物和含有反应性官能团的硅改性(甲基)丙烯酸酯系聚合物, 粘合剂; 和光引发剂,其中所述聚合物添加剂与所述粘合剂粘合剂的重量比为0.01%至4.5%,包含所述组合物的粘合剂层的切割膜,包括所述切割膜的切割模片接合膜以及用于切割 半导体晶片使用切割芯片接合膜。
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公开(公告)号:KR101690626B1
公开(公告)日:2016-12-28
申请号:KR1020147023547
申请日:2013-02-22
申请人: 히타치가세이가부시끼가이샤
CPC分类号: H01L23/293 , B23K35/0222 , B23K35/0233 , B23K35/0244 , B23K2201/40 , C08G59/38 , C08K5/09 , C08L63/00 , C09J11/06 , C09J163/00 , C09J163/04 , C09J201/00 , H01L21/563 , H01L23/3157 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L2224/0401 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/08145 , H01L2224/08225 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16238 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81192 , H01L2224/81203 , H01L2224/81815 , H01L2224/83192 , H01L2224/83203 , H01L2224/83862 , H01L2224/9211 , H01L2225/06513 , H01L2225/06517 , H01L2924/00014 , H01L2924/10253 , H01L2224/16225 , H01L2924/00 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2924/01082 , H01L2924/01083 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552
摘要: 반도체칩 및배선회로기판의각각의접속부가서로전기적으로접속된반도체장치, 또는복수의반도체칩의각각의접속부가서로전기적으로접속된반도체장치의제조방법으로서, 상기접속부중 적어도일부를, 하기식(1)으로표시되는기를가지는화합물을함유하는반도체용접착제를사용하여봉지(封止)하는공정을포함하는, 반도체장치의제조방법. [화학식 1][식중, R은, 전자공여성기를나타낸다.]
摘要翻译: 一种半导体器件的制造方法,其中半导体芯片的连接部分电连接到其中多个半导体芯片的连接部分彼此电连接的布线电路衬底或半导体器件的连接部分,该方法包括 用包含具有由下式(1)表示的基团的化合物的半导体用粘合剂密封连接部分的至少一部分的步骤:其中R1表示给电子基团。
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公开(公告)号:KR1020160138017A
公开(公告)日:2016-12-02
申请号:KR1020167025725
申请日:2015-01-29
申请人: 데쿠세리아루즈 가부시키가이샤
IPC分类号: H01L23/00 , C09J7/00 , C09J9/02 , C09J11/02 , C09J201/00
CPC分类号: C09J7/00 , B32B27/06 , B32B27/08 , B32B27/18 , B32B27/20 , B32B2307/20 , B32B2307/202 , B32B2307/206 , B32B2307/706 , B32B2457/00 , B32B2457/14 , C08K7/00 , C08K2201/001 , C09J7/10 , C09J9/02 , C09J11/02 , C09J2201/134 , C09J2201/36 , C09J2201/602 , C09J2203/326 , C09J2205/102 , C09J2433/00 , C09J2463/00 , C09J2471/00 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/13144 , H01L2224/16227 , H01L2224/2612 , H01L2224/27003 , H01L2224/271 , H01L2224/27334 , H01L2224/29082 , H01L2224/29083 , H01L2224/2929 , H01L2224/29295 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29357 , H01L2224/29364 , H01L2224/29387 , H01L2224/2939 , H01L2224/294 , H01L2224/29455 , H01L2224/29464 , H01L2224/29499 , H01L2224/32227 , H01L2224/73204 , H01L2224/81191 , H01L2224/81488 , H01L2224/81903 , H01L2224/83007 , H01L2224/83138 , H01L2224/83192 , H01L2224/83203 , H01L2224/83488 , H01L2224/83851 , H01L2224/83871 , H01L2924/07 , H01L2924/3511 , H01L2924/00012 , H01L2924/00014 , H01L2924/0635 , H01L2924/066 , H01L2924/0665 , H01L2924/0675 , H01L2924/069 , H01L2924/07025 , H01L2924/061 , H01L2924/0549 , H01L2924/0543 , H01L2924/01049 , H01L2924/0544 , H01L2924/0105
摘要: 이방성도전필름은도전입자와스페이서를함유한다. 스페이서는필름의폭 방향중앙부에배열되어있다. 필름의폭 방향중앙부란, 필름의전체폭의 20 ∼ 80 % 이다. 이방성도전필름의두께방향에있어서의스페이서의높이는 5 ㎛보다크고 75 ㎛보다작다. 이와같은이방성도전필름은, 제 1 절연성접착층과제 2 절연성접착층의적층구조를갖고, 제 1 절연성접착층에도전입자가분산되어있고, 제 1 절연성접착층의제 2 절연성접착층측의표면에스페이서가규칙적으로배열되어있다.
摘要翻译: 该各向异性导电膜包括导电颗粒和间隔物。 间隔件沿宽度方向布置在膜的中心部分。 膜的宽度方向的中央部分为膜的总宽度的20-80%。 间隔物在各向异性导电膜的厚度方向的高度大于5μm,小于75μm。 该各向异性导电膜设置有包括第一绝缘粘合剂层和第二绝缘粘合剂层的堆叠结构。 导电粒子分散在第一绝缘粘合剂层中。 间隔物规则地布置在第二绝缘粘合剂层一侧的第一绝缘粘合剂层的表面上。
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公开(公告)号:KR1020160132911A
公开(公告)日:2016-11-21
申请号:KR1020167027753
申请日:2015-02-10
申请人: 데쿠세리아루즈 가부시키가이샤
CPC分类号: C09J7/00 , C08K2201/001 , C08L75/04 , C09J7/10 , C09J9/02 , C09J11/04 , C09J167/00 , C09J175/04 , C09J2201/602 , C09J2201/61 , C09J2201/622 , C09J2203/326 , C09J2205/102 , C09J2467/00 , C09J2475/00 , H01B1/124 , H01B1/22 , H01L24/29 , H01L24/83 , H01L2224/2929 , H01L2224/2939 , H01L2224/29439 , H01L2224/29499 , H01L2224/83191 , H01L2224/83193 , H01L2224/83203 , H01L2924/01047 , H01R4/04
摘要: 제1 전자부품의단자와제2 전자부품의단자를이방성도전접속시키는이방성도전필름이며, 접착층형성성분및 도전성입자를함유하는도전성입자함유층을갖고, 측정온도범위가 10℃내지 250℃이고, 승온속도가 10℃/분간인조건에서흡열피크온도를측정한경우에있어서의시차주사열량측정에있어서, 상기도전성입자함유층이 2개의흡열피크를나타내고, 저온측의흡열피크온도를 T2, 고온측의흡열피크온도를 T4라했을때, T2가, 30℃이상이고, T4-T2가, 0℃보다크고 80℃이하인것을특징으로하는이방성도전필름이다.
摘要翻译: 一种用于各向异性导电连接第一电子部件的端子和第二电子部件的端子的各向异性导电膜,所述各向异性导电膜包括:含有粘合剂层形成组分和导电颗粒的含导电颗粒的层,其中 导电粒子层在差示扫描量热法中具有两个吸热峰,其中在测量温度范围为10℃至250℃,加热速度为10℃/ min的条件下测量吸热峰值温度,其中T2 为30℃以上,T4-T2大于0℃但为80℃以下,其中T2为存在于较低温度侧的吸热峰的温度,T4为存在的吸热峰的温度 在较高的温度侧。
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公开(公告)号:KR101666101B1
公开(公告)日:2016-10-13
申请号:KR1020147023580
申请日:2012-10-01
申请人: 히타치가세이가부시끼가이샤
IPC分类号: C09J163/00 , C09J11/06 , H01L21/52 , H01L21/60 , H01L23/29
CPC分类号: C09J11/06 , B23K35/3613 , B23K35/3618 , B23K35/362 , C08K5/092 , C09J163/00 , H01L21/563 , H01L23/295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/03825 , H01L2224/0401 , H01L2224/051 , H01L2224/05111 , H01L2224/05116 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05575 , H01L2224/0558 , H01L2224/056 , H01L2224/05611 , H01L2224/05616 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11825 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13575 , H01L2224/1358 , H01L2224/136 , H01L2224/13611 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17181 , H01L2224/271 , H01L2224/27416 , H01L2224/27436 , H01L2224/27848 , H01L2224/2919 , H01L2224/2929 , H01L2224/29386 , H01L2224/29387 , H01L2224/2939 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/73104 , H01L2224/81011 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/8121 , H01L2224/81815 , H01L2224/81895 , H01L2224/81907 , H01L2224/831 , H01L2224/83191 , H01L2224/83203 , H01L2224/83855 , H01L2224/83862 , H01L2224/9205 , H01L2224/92122 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H05K3/305 , H05K3/3436 , H05K2201/0367 , H05K2201/10977 , Y02P70/613 , H01L2924/00012 , H01L2924/014 , H01L2924/00014 , H01L2224/8385 , H01L2924/00 , C08L63/00 , H01L2224/27 , H01L2924/01047 , H01L2924/01082 , H01L2924/01083 , H01L2924/01029 , H01L2224/11 , H01L2924/0001
摘要: 에폭시수지, 경화제및 하기식(1)으로표시되는기를가지는화합물을함유하는, 반도체용접착제. [화학식 1][식중, R은, 전자공여성기를나타낸다.]
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9.기판 어댑터를 구비하는 반도체 소자를 제조하기 위한 방법, 고체 기판 어댑터를 구비하는 반도체 소자 및 반도체 소자를 접촉시키는 방법 有权
标题翻译: 用于生产具有基板适配器的半导体元件的方法,具有固体基板适配器的半导体元件和用于接触半导体元件的方法公开(公告)号:KR1020160062677A
公开(公告)日:2016-06-02
申请号:KR1020150143836
申请日:2015-10-15
CPC分类号: H01L24/40 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/75 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L24/95 , H01L2221/68327 , H01L2221/6834 , H01L2224/05624 , H01L2224/27003 , H01L2224/27318 , H01L2224/2732 , H01L2224/27418 , H01L2224/27438 , H01L2224/2744 , H01L2224/27442 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/37147 , H01L2224/40225 , H01L2224/40245 , H01L2224/40491 , H01L2224/45014 , H01L2224/45147 , H01L2224/48227 , H01L2224/48247 , H01L2224/48491 , H01L2224/73263 , H01L2224/73265 , H01L2224/83005 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/83801 , H01L2224/8384 , H01L2224/8385 , H01L2224/84002 , H01L2224/84801 , H01L2224/8484 , H01L2224/8485 , H01L2224/85002 , H01L2224/92246 , H01L2224/92247 , H01L2224/95001 , H01L2924/15787 , H01L2924/35 , H01L2924/00014 , H01L2924/00015 , H01L2924/014 , H01L2924/00
摘要: 본발명은기판어댑터(35', 35'', 35''')를구비하는적어도하나의반도체소자(10', 10'', 10''')를제조하기위한방법에관한것으로서, - 도전성금속요소(12)를구조화하는단계, - 반도체소자(10)의제 1 면(13) 상에접촉재료(11)를도포하는단계 - 상기반도체소자(10)의제 2 면(14)은수송요소(20) 상에배치됨 -, - 구조화된금속요소(12)의제 1 면(21)과상기접촉재료(11)로코팅된상기반도체소자(10)의제 1 면(13)이서로대향하여배치되도록상기구조화된금속요소(12)와상기반도체소자(10)를위치시키는단계, 및 - 상기접촉재료(11)로코팅된상기반도체소자(10)에상기구조화된금속요소(12)를접합시키는단계를포함한다.
摘要翻译: 本发明涉及一种用于制造至少一个设置有衬底适配器(35',35“,35”')的半导体器件(10',10“,10”')的方法,其中该方法包括 步骤:结构化导电金属元件(12); 在所述半导体器件(10)的第一表面(13)上施加接触材料(11),其中所述半导体器件(10)的第二表面(14)布置在转移元件上; 将所述结构化金属元件(12)和所述半导体器件(10)放置成使得所述结构化金属元件(12)的第一表面(21)与涂覆有所述触点的所述半导体器件(10)的所述第一表面(13)相对 材料(11); 并将结构化的金属元件(12)接合到涂覆有接触材料(11)的半导体器件(10)。
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公开(公告)号:KR1020160055807A
公开(公告)日:2016-05-18
申请号:KR1020167006512
申请日:2014-09-19
申请人: 닛토덴코 가부시키가이샤
IPC分类号: H01L23/00 , H01L21/56 , H01L21/683
CPC分类号: H01L21/563 , H01L21/4853 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2021/60135 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/16225 , H01L2224/16227 , H01L2224/27003 , H01L2224/271 , H01L2224/27436 , H01L2224/2919 , H01L2224/29191 , H01L2224/2929 , H01L2224/29291 , H01L2224/293 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29387 , H01L2224/29393 , H01L2224/29398 , H01L2224/32225 , H01L2224/73104 , H01L2224/81011 , H01L2224/81193 , H01L2224/81815 , H01L2224/83191 , H01L2224/83203 , H01L2224/83211 , H01L2224/83856 , H01L2224/83862 , H01L2224/8388 , H01L2224/83885 , H01L2224/83906 , H01L2224/83907 , H01L2224/83948 , H01L2224/92 , H01L2224/9211 , H01L2224/9212 , H01L2224/92125 , H01L2224/94 , H01L2924/3841 , H01L2224/81 , H01L2224/83 , H01L2924/014 , H01L2924/05442 , H01L2924/0549 , H01L2924/095 , H01L2924/053 , H01L2924/06 , H01L2924/00012 , H01L2924/05432 , H01L2924/0532 , H01L2924/01004 , H01L2924/04642 , H01L2924/05042 , H01L2924/00014 , H01L2924/013 , H01L2924/01006 , H01L2924/01082 , H01L2924/01049 , H01L2924/01083 , H01L2924/0105 , H01L2924/01029 , H01L2924/01051 , H01L2924/01047 , H01L2224/27 , H01L21/304 , H01L2221/68368 , H01L21/78
摘要: 본발명은반도체칩의범프형성면에시트상수지조성물이접착된, 시트상수지조성물구비된칩을준비하는공정 A와, 전극이형성된실장용기판을준비하는공정 B와, 실장용기판에, 시트상수지조성물구비된칩을, 시트상수지조성물을접합면으로하여접착하여, 반도체칩에형성된범프와실장용기판에형성된전극을대향시키는공정 C와, 공정 C 후에, 시트상수지조성물을가열하여반경화시키는공정 D와, 공정 D 후에, 공정 D에서의가열보다도고온에서가열하여, 범프와전극을접합하는동시에, 시트상조성물을경화시키는공정 E를포함하는반도체장치의제조방법에관한것이다.
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