Moisture barrier sealing of fiber optic coils
    1.
    发明授权
    Moisture barrier sealing of fiber optic coils 有权
    光纤线圈的防潮密封

    公开(公告)号:US07182975B2

    公开(公告)日:2007-02-27

    申请号:US10886427

    申请日:2004-07-07

    Applicant: Peter Gregory

    Inventor: Peter Gregory

    CPC classification number: C03C25/106 B05D1/60 G02B6/4457 G02B6/4494

    Abstract: A method of applying a moisture barrier seal to a fiber optic coil includes mounting a fiber optic coil in a vacuum deposition chamber, so as to expose a large exterior surface area of the fiber optic coil to an interior portion of the deposition chamber. The method further includes reducing the air pressure within the chamber to a value that is less than ambient pressure outside of the chamber. The method further includes introducing a vapor form of a non-porous material, preferably parylene, into the chamber. The vapor form of the non-porous material changes into a solid state upon contact with the fiber optic coil, so as to form a conformal coat on the fiber optic coil.

    Abstract translation: 将防潮密封件施加到光纤线圈的方法包括将光纤线圈安装在真空沉积室中,以将光纤线圈的大的外表面区域暴露于沉积室的内部。 该方法还包括将室内的空气压力降低到小于室外的环境压力的值。 该方法还包括将无孔材料(优选聚对二甲苯)的蒸汽形式引入室中。 当与光纤线圈接触时,无孔材料的蒸汽形式变成固态,从而在光纤线圈上形成共形涂层。

    Switched filterbank and method of making the same

    公开(公告)号:US07084722B2

    公开(公告)日:2006-08-01

    申请号:US10896720

    申请日:2004-07-22

    CPC classification number: H01P1/20336

    Abstract: An integrated switched filterbank and method of forming an integrated switched filterbank is disclosed. One embodiment includes a switched filterbank that includes an active subassembly, a plurality of active devices mounted to the active subassembly, and a stripline filter subassembly stacked below the active subassembly. The stripline filter subassembly includes a plurality of stripline filters of varying passbands embedded therein, wherein the plurality of stripline filters are coupled to active devices mounted on the active subassembly through a set of contacts extending from the stripline filters through the active subassembly to at least one of the plurality of active devices.

    Methodology for the detection of intrusion into radio frequency (RF) based networks including tactical data links and the tactical internet

    公开(公告)号:US07068998B2

    公开(公告)日:2006-06-27

    申请号:US09833634

    申请日:2001-04-13

    CPC classification number: H04L63/1416 H04L63/20 H04W12/12

    Abstract: The present invention provides strategies for detecting intrusions in wireless environments, and the strategies are based on innovative applications of information analysis as well as other information correlating techniques. The key to detecting intrusions in a RF based environment is to understand the normal spectrum of behavior so that deviations can be detected and analyzed. For a wireless communications grid, this process requires empirical knowledge about how the radios work together as components of the information grid, and how this grid network is managed. Once normal behavior has been characterized, anomalous behavior can be identified. Potential intrusions into the wireless network can be analyzed and an attack model can be created. The attack model can be utilized as the basis for initiating appropriate adaptive responses.

    Method of making a semiconductor structure for high power semiconductor devices
    5.
    发明申请
    Method of making a semiconductor structure for high power semiconductor devices 有权
    制造大功率半导体器件的半导体结构的方法

    公开(公告)号:US20060088978A1

    公开(公告)日:2006-04-27

    申请号:US11248195

    申请日:2005-10-13

    Abstract: A substrate arrangement for high power semiconductor devices includes a SiC wafer having a Si layer deposited on a surface of the SiC wafer. An SOI structure having a first layer of Si, an intermediate layer of SiO2 and a third layer of Si, has its third layer of Si bonded to the Si deposited on the SiC wafer, forming a unitary structure. The first layer of Si and the intermediate layer of SiO2 of the SOI are removed, leaving a pure third layer of Si on which various semiconductor devices may be fabricated. The third layer of Si and deposited Si layer may be removed over a portion of the substrate arrangement such that one or more semiconductor devices may be fabricated on the SiC wafer while other semiconductor devices may be accommodated on the pure third layer of Si.

    Abstract translation: 用于大功率半导体器件的衬底布置包括在SiC晶片的表面上沉积有Si层的SiC晶片。 具有第一Si层,SiO 2中间层和Si第三层的SOI结构具有与沉积在SiC晶片上的Si结合的第三层Si,形成单一结构 。 除去SOI的第一层Si和SiO 2的中间层,留下可以制造各种半导体器件的纯的第三层Si。 可以在衬底布置的一部分上去除第三层Si和沉积的Si层,使得可以在SiC晶片上制造一个或多个半导体器件,而其他半导体器件可以容纳在纯的第三层Si上。

    Multispectral superconductive quantum detector
    7.
    发明授权
    Multispectral superconductive quantum detector 失效
    多光谱超导量子检测器

    公开(公告)号:US5532485A

    公开(公告)日:1996-07-02

    申请号:US323228

    申请日:1994-10-14

    CPC classification number: H01L39/10 G01T1/1606 Y10S505/848 Y10S505/849

    Abstract: An array of superconductive quantum detectors (SQD) with current biased SQUID flowing in one direction from fifty percent of the detectors and flowing in the opposite direction for the other fifty percent. The SQD in one embodiment has a serpentine pattern loop and minimal cross-sectional area to increase kinetic induction. A directly connected SQUID is within the loop of one embodiment and exterior of the loop in another embodiment. Methods of optimizing the signal of the array and different types of Josephson Junctions are also disclosed.

    Abstract translation: 具有电流偏置SQUID的超导量子检测器(SQD)的阵列在一个方向上从五十%的检测器流动,另一方向向另一个方向流动另外50%。 一个实施例中的SQD具有蛇形图案环和最小的横截面积以增加动力学感应。 在另一个实施例中,直接连接的SQUID在一个实施例的环路和环路的外部。 还公开了优化阵列的信号和不同类型的约瑟夫逊接合的方法。

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