公开(公告)号：US20140014497A1

公开(公告)日：2014-01-16

申请号：US13550270

申请日：2012-07-16

申请人： Boris L. Druz ,  Vincent Ip ,  Adrian Devasahayam

发明人： Boris L. Druz ,  Vincent Ip ,  Adrian Devasahayam

IPC分类号： C23C14/34 ,  C23C14/35

CPC分类号： C23C14/3442 ,  C23C14/081 ,  C23C14/083 ,  C23C14/10 ,  C23C14/14 ,  C23C14/16 ,  C23C14/225 ,  C23C14/35 ,  C23C14/354 ,  H01J37/3053

摘要： An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be substantially equal the supplement of the angle α′ formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.

摘要翻译： 离子蚀刻辅助沉积设备使用离子蚀刻源和沉积源以相对于衬底相似的角度相对于彼此以一定角度α将薄膜沉积在具有三维特征的衬底上。 角度α选择为基本上等于在基底上的三维特征与基底表面之间形成的角度α'的补充。 在该配置中，调节能量蚀刻离子和沉积原子的相对通量以防止劣质沉积材料的生长。

公开(公告)号：US06447839B1

公开(公告)日：2002-09-10

申请号：US09603408

申请日：2000-06-26

申请人： Hari Hegde ,  Adrian Devasahayam ,  Jinsong Wang

发明人： Hari Hegde ,  Adrian Devasahayam ,  Jinsong Wang

IPC分类号： B05D512

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3932 ,  H01F41/302 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044

摘要： This invention is directed to methods for depositing multilayered thin films onto substrates, for example in making thin film magnetic heads. In accordance with the invention a first film, such as Cr, is deposited onto the substrate at a first pressure and a second layer, such as CoCrPt is deposited at a second pressure.

摘要翻译： 本发明涉及将多层薄膜沉积到衬底上，例如制造薄膜磁头的方法。 根据本发明，第一膜（例如Cr）以第一压力沉积到衬底上，并且第二层（例如CoCrPt）在第二压力下沉积。

公开(公告)号：US20070045102A1

公开(公告)日：2007-03-01

申请号：US11209907

申请日：2005-08-23

申请人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao ,  Chih-Ching Hu ,  Vincent Ip ,  Piero Sferlazzo

发明人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao ,  Chih-Ching Hu ,  Vincent Ip ,  Piero Sferlazzo

IPC分类号： C23C14/00

CPC分类号： C23C14/352 ,  C23C14/165

摘要： An improved planetary sputter deposition method for sputter depositing an alloy on a substrate wherein the sputter deposited amount, or thickness, of a specific material of the alloy can be controlled so that different substrates can be provided with an alloy having a different composition, i.e. having different percentages of the same materials, thus, reducing the costs of stockpiling multiple alloy targets. The method generally includes providing a substrate and a plurality of targets with each of the plurality of targets being composed of one or more magnetic materials. The targets are sputtered, in sequence, to deposit each of the materials of the plurality of targets on the substrate to provide at least one laminate defining an alloy.

摘要翻译： 一种用于在基板上溅射沉积合金的改进的行星溅射沉积方法，其中可以控制合金的特定材料的溅射沉积量或厚度，使得可以提供具有不同组成的合金，即具有 不同百分比的相同材料，从而降低储存多种合金靶材的成本。 该方法通常包括提供基底和多个靶，其中多个靶中的每一个由一个或多个磁性材料构成。 按顺序溅射靶，以将多个靶材的每种材料沉积在基底上，以提供限定合金的至少一个层压板。

公开(公告)号：US20060292705A1

公开(公告)日：2006-12-28

申请号：US11166322

申请日：2005-06-24

申请人： Hariharakeshave Hegde ,  Ming Mao ,  Boris Druz ,  Adrian Devasahayam

发明人： Hariharakeshave Hegde ,  Ming Mao ,  Boris Druz ,  Adrian Devasahayam

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3903 ,  G11B5/3929

摘要： Method and process for fabricating a device structure for a read head of a mass storage device. A polish stop layer formed of a relatively hard material, such as diamond-like carbon, is positioned between a layer stack and a resist mask used to mask regions of the layer stack during ion milling that removes portions of the layer stack to define a read sensor. The resist mask is removed, after the read sensor is defined, by a planarization process, which eliminates the need to lift-off the resist mask with a conventional chemical-based process. An electrical isolation layer of a material, such as Al2O3, is formed on the masked read sensor. In addition or alternatively, the electrical isolation layer may be formed using an atomic layer deposition (ALD) process performed at an elevated temperature that would otherwise hard bake the resist mask.

摘要翻译： 制造用于大容量存储装置的读取头的装置结构的方法和工艺。 由相对硬的材料（例如类金刚石碳）形成的抛光停止层位于层叠和抗蚀剂掩模之间，用于在离子铣削期间掩蔽层堆叠的区域，其移除层堆叠的部分以限定读取 传感器。 在通过平坦化处理定义读取传感器之后，去除抗蚀剂掩模，这消除了用常规的基于化学的方法剥离抗蚀剂掩模的需要。 在掩蔽的读取传感器上形成诸如Al 2 O 3 3的材料的电隔离层。 另外或替代地，电隔离层可以使用在否则将硬烘烤抗蚀剂掩模的升高的温度下进行的原子层沉积（ALD）工艺来形成。

公开(公告)号：US06139906A

公开(公告)日：2000-10-31

申请号：US414233

申请日：1999-10-07

申请人： Hari Hegde ,  Adrian Devasahayam ,  Jinsong Wang

发明人： Hari Hegde ,  Adrian Devasahayam ,  Jinsong Wang

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  B05D5/12

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/313 ,  H01F41/302 ,  G11B5/3163 ,  G11B5/3932 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044

摘要： This invention is directed to methods for depositing multilayered thin films onto substrates, for example in making thin film magnetic heads. In accordance with the invention a first film, such as Cr, is deposited onto the substrate at a first angle and a second layer, such as CoCrPt is deposited at a second angle.

摘要翻译： 本发明涉及将多层薄膜沉积到衬底上，例如制造薄膜磁头的方法。 根据本发明，第一膜（例如Cr）以第一角度沉积到衬底上，并且第二层（例如CoCrPt）以第二角度沉积。

公开(公告)号：US20070209926A1

公开(公告)日：2007-09-13

申请号：US11558769

申请日：2006-11-10

申请人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao

发明人： Chih-Ling Lee ,  Adrian Devasahayam ,  Ming Mao

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/352 ,  C23C14/505 ,  C23C14/568 ,  C23C14/5833

摘要： The present invention relates a physical vapor deposition (PVD) system. e.g. a planetary system, for forming one or more layers of a coating material on a substrate and for treating, or modifying, the substrate surface, which can include the surface of the substrate or a deposited layer of coating material thereon. The PVD system includes a single vacuum (or process) chamber having an ion source and at least one PVD source of the coating material. The ion source, such as a linear ion source, is configured to emit a beam of energetic particles at a substrate for surface modification of the substrate surface, for example, to provide film densification, etching, cleaning, surface smoothing, and/or oxidation thereof. The PVD source(s) of the coating material deposits one or more layers of coating material(s) on the substrate. The uniformity of substrate surface modification and the thickness uniformity of the deposited layers can be maintained by velocity profiling of the rotating substrate within the vacuum chamber.

摘要翻译： 本发明涉及物理气相沉积（PVD）系统。 例如 行星系统，用于在衬底上形成一层或多层涂层材料，并用于处理或改性衬底表面，衬底表面可包括衬底的表面或其上的涂层材料的沉积层。 PVD系统包括具有离子源和涂层材料的至少一个PVD源的单个真空（或过程）室。 诸如线性离子源的离子源被配置为在衬底处发射高能粒子束，用于衬底表面的表面改性，例如以提供膜致密化，蚀刻，清洁，表面平滑化和/或氧化 其中。 涂层材料的PVD源在衬底上沉积一层或多层涂层材料。 衬底表面改性的均匀性和沉积层的厚度均匀性可以通过旋转衬底在真空室内的速度分布来保持。

公开(公告)号：US20050003672A1

公开(公告)日：2005-01-06

申请号：US10915583

申请日：2004-08-09

申请人： Jacques Kools ,  Adrian Devasahayam

发明人： Jacques Kools ,  Adrian Devasahayam

IPC分类号： C23C14/02 ,  C23C14/58 ,  C23F4/00 ,  H01F41/30 ,  H01L21/321 ,  H01L43/12 ,  H01L21/311

CPC分类号： C23C14/5833 ,  C23C14/022 ,  C23F4/00 ,  H01F41/302 ,  H01J37/32357 ,  H01L21/32115

摘要： A method and an apparatus for smoothing surfaces on an atomic scale. The invention performs smoothing of surfaces by use of a low energy ion or neutral noble gas beam, which may be formed in an ion source or a remote plasma source. The smoothing process may comprise a post-deposition atomic smoothing step (e.g., an assist smoothing step) in a multilayer fabrication procedure. The invention utilizes combinations of relatively low particle energy (e.g., below the sputter threshold of the material) and near normal incidence angles, which achieve improved smoothing of a surface on an atomic scale with substantially no etching of the surface.

摘要翻译： 一种用于平滑原子尺度表面的方法和装置。 本发明通过使用可以在离子源或远程等离子体源中形成的低能量离子或中性惰性气体束来执行表面的平滑化。 平滑处理可以包括多层制造过程中的后沉积原子平滑步骤（例如，辅助平滑化步骤）。 本发明利用相对低的粒子能量（例如，低于材料的溅射阈值）和近似法线入射角的组合，其实现基本上没有蚀刻表面的原子尺度上的表面的改进的平滑化。