公开(公告)号：US20160326002A1

公开(公告)日：2016-11-10

申请号：US15104759

申请日：2014-12-04

Applicant: Juergen Erwin LANG ,  Hartwig RAULEDER ,  Jens ELSNER

Inventor： Juergen Erwin LANG ,  Hartwig RAULEDER ,  Jens ELSNER

IPC: C01B33/04 ,  B01D3/14 ,  B01D69/12 ,  B01J19/08 ,  B01D53/22

CPC classification number: C01B33/04 ,  B01D3/009 ,  B01D3/145 ,  B01D53/229 ,  B01D69/12 ,  B01J19/088 ,  B01J2219/0805 ,  B01J2219/0896 ,  Y02P20/127

Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by reaction of monosilane in noble gas in a non-thermal plasma, and also to a plant for performance of this process.

Abstract translation: 本发明涉及通过在非热等离子体中的惰性气体中的甲硅烷反应制备二聚和/或三聚硅烷的方法，以及用于实施该方法的设备。

公开(公告)号：US20160060126A1

公开(公告)日：2016-03-03

申请号：US14782433

申请日：2014-02-28

Applicant: Jürgen Erwin LANG ,  Hartwig RAULEDER ,  Ekkehard MÜEH

Inventor： Juergen Erwin LANG ,  Hartwig RAULEDER ,  Ekkehard MUEH

IPC: C01B33/107 ,  B01J19/08

CPC classification number: C01B33/107 ,  B01J19/088 ,  B01J2219/0805 ,  C01B33/10742 ,  C01B33/10773

Abstract: The invention relates to a process for converting polychlorosilanes into hexachlorodisilane, by one or more trimeric polychlorosilanes or a trimeric polychlorosilane in a mixture with higher molecular weight polychlorosilanes being exposed to a gas discharge and hexachlorodisilane being formed and isolated.

Abstract translation: 本发明涉及一种将多氯硅烷转化为六氯二硅烷的方法，其中一种或多种三聚多氯硅烷或三聚聚氯硅烷与较高分子量聚氯代硅烷暴露于气体放电和六氯二硅烷形成和分离的混合物中。

公开(公告)号：US09172057B2

公开(公告)日：2015-10-27

申请号：US14129997

申请日：2012-06-20

Applicant: Richard Baisl ,  Dirk Becker ,  Thomas Dobbertin ,  Doreen Heppner ,  Benjamin Krummacher ,  Erwin Lang ,  Tilman Schlenker ,  Christian Schmid

Inventor： Richard Baisl ,  Dirk Becker ,  Thomas Dobbertin ,  Doreen Heppner ,  Benjamin Krummacher ,  Erwin Lang ,  Tilman Schlenker ,  Christian Schmid

IPC: H01L51/52 ,  H01L51/44

CPC classification number: H01L51/5253 ,  H01L51/448 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5256

Abstract: An encapsulation structure for an optoelectronic component, may include: a thin-film encapsulation for protecting the optoelectronic component against chemical impurities; an adhesive layer formed on the thin-film encapsulation; and a cover layer formed on the adhesive layer and serving for protecting the thin-film encapsulation and/or the optoelectronic component against mechanical damage, wherein the adhesive layer is formed such that particle impurities situated at the surface of the thin-film encapsulation are at least partly enclosed by the adhesive layer.

Abstract translation: 用于光电子部件的封装结构可以包括：用于保护光电子部件免受化学杂质的薄膜封装; 形成在薄膜封装上的粘合剂层; 以及形成在所述粘合剂层上并用于保护所述薄膜封装和/或所述光电部件免受机械损伤的覆盖层，其中所述粘合剂层形成为使得位于所述薄膜封装表面处的颗粒杂质处于 最少部分地被粘合剂层包围。

公开(公告)号：US09051526B2

公开(公告)日：2015-06-09

申请号：US13526482

申请日：2012-06-18

Applicant: Georg Markowz ,  Jürgen Erwin Lang ,  Rüdiger Schütte

Inventor： Georg Markowz ,  Jürgen Erwin Lang ,  Rüdiger Schütte

IPC: C10L3/10 ,  C01B3/24 ,  C10G15/12

CPC classification number: C10L3/10 ,  C01B3/24 ,  C01B2203/0266 ,  C01B2203/04 ,  C01B2203/0861 ,  C01B2203/1241 ,  C10G15/12 ,  Y02P20/133

Abstract: A method for modification of a methane-containing gas stream, comprising the steps of: i) withdrawal of at least one substream from a methane-containing gas stream; ii) treatment of the substream with an electrically generated plasma, generating a modified gas composition which comprises a lower fraction of methane than the methane-containing gas stream used and iii) return of modified gas composition into the methane-containing gas stream. This method makes possible the storage of excess power in a natural gas line grid.

Abstract translation: 一种用于改变含甲烷气流的方法，包括以下步骤：i）从含甲烷的气流中取出至少一个子流; ii）用电产生的等离子体处理子流，产生改性气体组合物，其包含甲烷的比例低于使用的含甲烷气流，并且iii）将改性气体组合物返回到含甲烷气流中。 这种方法可以在天然气线路网格中存储多余的电力。

公开(公告)号：US20140319482A1

公开(公告)日：2014-10-30

申请号：US14131922

申请日：2012-05-31

Applicant: Thomas Dobbertin ,  Erwin Lang ,  Thilo Reusch ,  Daniel Steffen Setz

Inventor： Thomas Dobbertin ,  Erwin Lang ,  Thilo Reusch ,  Daniel Steffen Setz

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5268 ,  H01L27/322 ,  H01L51/5262 ,  H01L51/5265 ,  H01L51/5271 ,  H01L51/56

Abstract: A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or above the first electrode; a second translucent electrode on or above the organic electroluminescent layer structure; an optically translucent layer structure on or above the second electrode, wherein the optically translucent layer structure includes photoluminescence material; and a mirror layer structure on or above the optically translucent layer structure.

Abstract translation: 发光部件可以包括：第一电极; 在第一电极上或上方的有机电致发光层结构; 在有机电致发光层结构上或上方的第二透光电极; 在第二电极上或上方的光学半透明层结构，其中所述光学半透明层结构包括光致发光材料; 以及在光学半透明层结构上或上方的镜层结构。

公开(公告)号：US08722913B2

公开(公告)日：2014-05-13

申请号：US12524371

申请日：2007-12-20

Applicant: Juergen Erwin Lang ,  Hartwig Rauleder ,  Ekkehard Mueh

Inventor： Juergen Erwin Lang ,  Hartwig Rauleder ,  Ekkehard Mueh

IPC: C07F7/12

CPC classification number: B01J19/088 ,  B01J2219/0803 ,  B01J2219/0894 ,  C01B21/068 ,  C01B21/0823 ,  C01B32/907 ,  C01B33/04 ,  C01B33/107 ,  C01B33/12 ,  C01B33/36 ,  C01G17/00 ,  C01P2002/86 ,  C07F7/083 ,  C07F7/30

Abstract: The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.

Abstract translation: 本发明涉及二聚和/或三聚硅化合物，特别是硅卤素化合物的制备方法。 所要求保护的方法也适用于生产相应的锗化合物。 本发明还涉及用于实施所述方法来使用所生产的硅化合物的装置。

公开(公告)号：US20130292655A1

公开(公告)日：2013-11-07

申请号：US13823921

申请日：2011-07-28

Applicant: Dirk Becker ,  Erwin Lang ,  Thilo Reusch

Inventor： Dirk Becker ,  Erwin Lang ,  Thilo Reusch

IPC: H01L51/56 ,  H01L51/52

Abstract: A method for producing an electronic component may include: applying an electrode growth layer on or above a layer structure by means of an atomic layer deposition method; and applying an electrode on the electrode growth layer, wherein the electrode growth layer is applied with a layer thickness in a range of approximately 1.5 nm to approximately 28 nm.

Abstract translation: 电子部件的制造方法可以包括：通过原子层沉积法在层结构上或上方施加电极生长层; 以及在所述电极生长层上施加电极，其中所述电极生长层的厚度在约1.5nm至约28nm的范围内。

公开(公告)号：US08221593B2

公开(公告)日：2012-07-17

申请号：US12065126

申请日：2006-06-06

Applicant: Juergen Erwin Lang ,  Rainer Nicolai ,  Hartwig Rauleder

Inventor： Juergen Erwin Lang ,  Rainer Nicolai ,  Hartwig Rauleder

IPC: H05F3/04

CPC classification number: C01B33/10778 ,  B01J19/0093 ,  B01J19/088 ,  B01J2219/0002 ,  B01J2219/00033 ,  B01J2219/00788 ,  B01J2219/00822 ,  B01J2219/00853 ,  B01J2219/00867 ,  B01J2219/00869 ,  B01J2219/00871 ,  B01J2219/00873 ,  B01J2219/0093 ,  B01J2219/0807 ,  B01J2219/0828 ,  B01J2219/083 ,  B01J2219/0841 ,  B01J2219/0871 ,  B01J2219/0875 ,  B01J2219/0896 ,  C01G17/04 ,  C01P2006/80

Abstract: A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

Abstract translation: 在其中进行的反应器，工厂和连续的工业方法，用于通过处理待纯化的四氯化硅或四氯化锗来制备高纯度四氯化硅或高纯度四氯化锗，其被至少一种含氢的 化合物，通过冷等离子体，并通过分馏从所得处理相中分离纯化的高纯度四氯化硅或四氯化锗。 处理在等离子体反应器中进行，其中电介质的高压电极和接地的金属热交换器的纵向轴线彼此平行取向并且同时平行于重力的力矢量 。

公开(公告)号：US20110262339A1

公开(公告)日：2011-10-27

申请号：US13121759

申请日：2009-09-28

Applicant: Hartwig Rauleder ,  Ekkehard Müh ,  Mustafa Siray ,  Peter Nagler ,  Bodo Frings ,  Ingrid Lunt-Rieg ,  Alfons Karl ,  Christian Panz ,  Thomas Groth ,  Guido Stochniol ,  Matthias Rochnia ,  Jürgen Erwin Lang ,  Oliver Wolf ,  Rudolf Schmitz ,  Bernd Nowitzki ,  Dietmar Wewers

Inventor： Hartwig Rauleder ,  Ekkehard Müh ,  Mustafa Siray ,  Peter Nagler ,  Bodo Frings ,  Ingrid Lunt-Rieg ,  Alfons Karl ,  Christian Panz ,  Thomas Groth ,  Guido Stochniol ,  Matthias Rochnia ,  Jürgen Erwin Lang ,  Oliver Wolf ,  Rudolf Schmitz ,  Bernd Nowitzki ,  Dietmar Wewers

IPC: C01B33/025

CPC classification number: C01B33/025 ,  C01B32/05 ,  C01B33/148

Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.

Abstract translation: 本发明涉及一种适用于太阳能级硅的纯硅生产的完整方法，其中包括使用一种或多种纯碳源还原纯化的氧化硅，纯化的氧化硅被溶解为氧化硅 在水相中，具有相对于氧化硅的其它多价金属或金属氧化物的含量小于或等于300ppm，优选小于100ppm，特别优选小于50ppm，并且根据本发明，较少 超过10ppm的其他金属，并且有利地通过在碱性条件下的凝胶形成获得。 本发明还涉及含有活化剂的配方和使用纯化的氧化硅以及用于生产硅的活化剂。

公开(公告)号：US20110163462A1

公开(公告)日：2011-07-07

申请号：US13063171

申请日：2009-05-14

Applicant: Jürgen Erwin Lang ,  Carl-Friedrich Hoppe ,  Hartwig Rauleder ,  Ekkehard Müh

Inventor： Jürgen Erwin Lang ,  Carl-Friedrich Hoppe ,  Hartwig Rauleder ,  Ekkehard Müh

IPC: C07G99/00 ,  G05B1/00

CPC classification number: B01J19/00 ,  B01J2219/00015 ,  B01J2219/00022 ,  B01J2219/00225

Abstract: The invention relates to a plant for carrying out chemical processes comprising at least means for directly carrying out the conversion in the form of means for developing products and/or in the form of at least one reactor for the continuous industrial manufacture of products, devices for receiving and/or providing starting materials and/or products and devices for controlling the conversion, which are combined to a single integrated and transportable functional unit serving as infrastructure, preferably in the form of a standardised transport container.

Abstract translation: 本发明涉及一种用于执行化学过程的设备，该设备至少包括用于以用于开发产品和/或以至少一个反应器的形式直接进行转化的装置，用于产品的连续工业化生产的装置，用于 接收和/或提供用于控制转换的起始材料和/或产品和装置，其被组合到用作基础设施的单个集成和可运输的功能单元，优选地以标准化运输容器的形式。