公开(公告)号：US20250046717A1

公开(公告)日：2025-02-06

申请号：US18782630

申请日：2024-07-24

Applicant: Fujifilm Electronic Materials U.S.A, Inc.

Inventor： Stefan Vanclooster ,  Satoshi Matsui ,  Sanjay Malik ,  Binod B. De ,  William A. Reinerth ,  Stephanie Dilocker ,  Juliet Kotyk

IPC: H01L23/532 ,  C08L33/24

Abstract: The present disclosure generally relates to microelectronic devices with good reliability and related compositions and methods. In some embodiments, the methods include providing a composition comprising a hydrophobic multifunctional (meth)acrylate crosslinker and a polymer, and reacting the composition to provide a dielectric layer, wherein, when the dielectric layer is present in a microelectronic device, the microelectronic device exhibits good reliability. In certain embodiments, the compositions include a fully imidized polyimide and a hydrophobic multifunctional (meth)acrylate crosslinker, wherein the dielectric composition is suitable to provide a dielectric layer that imparts good reliability to a microelectronic device when the dielectric layer is present in the device.

公开(公告)号：US20240287384A1

公开(公告)日：2024-08-29

申请号：US18583264

申请日：2024-02-21

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Joshua Guske ,  Atsushi Mizutani

IPC: C09K13/02 ,  C09K13/00 ,  C09K15/30 ,  H01L21/02 ,  H01L21/3213

CPC classification number: C09K13/02 ,  C09K13/00 ,  C09K15/30 ,  H01L21/02071 ,  H01L21/32134

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing tantalum nitride (TaN) from a semiconductor substrate.

公开(公告)号：US20240258111A1

公开(公告)日：2024-08-01

申请号：US18434199

申请日：2024-02-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： William A. Wojtczak ,  Kazutaka Takahashi ,  Atsushi Mizutani ,  Keeyoung Park

IPC: H01L21/30 ,  C09D5/00 ,  C09D7/20 ,  H01L23/29

CPC classification number: H01L21/30 ,  C09D5/00 ,  C09D7/20 ,  H01L23/293

Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.

公开(公告)号：US12043592B2

公开(公告)日：2024-07-23

申请号：US17213324

申请日：2021-03-26

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Eduardo Ramirez Romero ,  David Bollinger

IPC: C07C29/80 ,  B01D15/08 ,  B01D71/26 ,  B01D71/36

CPC classification number: C07C29/80 ,  B01D15/08 ,  B01D71/261 ,  B01D71/262 ,  B01D71/36 ,  B01D2257/80 ,  B01D2311/2512 ,  B01D2311/2623

Abstract: The present disclosure is directed to methods and systems of purifying solvents. The purified solvents can be used for cleaning a semiconductor substrate in a multistep semiconductor manufacturing process.

公开(公告)号：US20240166948A1

公开(公告)日：2024-05-23

申请号：US18408579

申请日：2024-01-10

Applicant: FUJIFILM Corporation ,  FUJIFILM Electronic Materials U.S.A., Inc.

Inventor： Atsushi MIZUTANI ,  Mick BJELOPAVLIC ,  Carl BALLESTEROS

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.

公开(公告)号：US11945894B2

公开(公告)日：2024-04-02

申请号：US17352484

申请日：2021-06-21

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Binod B. De ,  William A. Reinerth ,  Sanjay Malik ,  Stephanie Dilocker ,  Raj Sakamuri

IPC: C08F279/02 ,  C08J5/18 ,  C08L51/00 ,  C09D11/101 ,  C09D11/107 ,  C09D151/04 ,  C25D5/56

CPC classification number: C08F279/02 ,  C08J5/18 ,  C08L51/003 ,  C09D11/101 ,  C09D11/107 ,  C09D151/04 ,  C25D5/56 ,  C08J2351/00

Abstract: This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.

公开(公告)号：US20240101929A1

公开(公告)日：2024-03-28

申请号：US18242622

申请日：2023-09-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Jieying Jiao

IPC: C11D1/82 ,  C11D3/30 ,  C11D3/43 ,  C11D11/00 ,  H01L21/02

CPC classification number: C11D1/82 ,  C11D3/30 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/0206 ,  H01L21/02068

Abstract: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.

公开(公告)号：US20240059968A1

公开(公告)日：2024-02-22

申请号：US18234499

申请日：2023-08-16

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Dmitry Dinega ,  Thomas Dory

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US11908709B2

公开(公告)日：2024-02-20

申请号：US16748826

申请日：2020-01-22

Applicant: FUJIFILM Electronic Materials U.S.A., Inc.

Inventor： Marcia Cole-Yocom ,  Bryan Hinzie

IPC: B65D23/02 ,  H01L21/67 ,  B65D1/40 ,  B65D1/42 ,  B65D1/02 ,  B08B3/08 ,  B08B9/08

CPC classification number: H01L21/67023 ,  B08B3/08 ,  B08B9/08 ,  B65D1/0215 ,  B65D1/40 ,  B65D1/42 ,  B65D23/02

Abstract: A container for containing a raw material of a chemical liquid and a method of preparing a container are provided. The container at least includes an inner wall and solvent-treated surface of the inner wall. The method of preparing a container includes treating a surface of the inner wall with water and treating the surface the inner wall with an organic solvent.

公开(公告)号：US11898123B2

公开(公告)日：2024-02-13

申请号：US17458671

申请日：2021-08-27

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Emil A. Kneer ,  Thomas Dory ,  Atsushi Mizutani

IPC: C11D7/32 ,  C11D3/33 ,  C11D3/00 ,  C11D3/28 ,  C11D11/00 ,  C11D3/43 ,  C11D3/34

CPC classification number: C11D3/33 ,  C11D3/0047 ,  C11D3/0073 ,  C11D3/28 ,  C11D3/3409 ,  C11D3/43 ,  C11D11/0047

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 3) at least one corrosion inhibitor, the corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one sulfonic acid; and 5) water.