公开(公告)号：US20130134583A1

公开(公告)日：2013-05-30

申请号：US13477387

申请日：2012-05-22

申请人： Satoshi TSUKIYAMA ,  Masatoshi Fukuda ,  Hiroshi Watabe ,  Keita Mizoguchi ,  Naoyuki Komuta

发明人： Satoshi TSUKIYAMA ,  Masatoshi Fukuda ,  Hiroshi Watabe ,  Keita Mizoguchi ,  Naoyuki Komuta

IPC分类号： H01L23/498 ,  H01L21/50

CPC分类号： H01L24/81 ,  H01L21/50 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/14151 ,  H01L2224/14155 ,  H01L2224/14156 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/83104 ,  H01L2224/83815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00

摘要： In one embodiment, a semiconductor device includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first and second semiconductor chips are electrically connected via first bump connection parts. Stopper projections and bonding projections are provided at least one of the first and second semiconductor chips. The stopper projections are in contact with the other of the first and second semiconductor chips in an unbonded state. The bonding projections are bonded to the first and second semiconductor chips.

摘要翻译： 在一个实施例中，半导体器件包括堆叠在第一半导体芯片上的第一半导体芯片和第二半导体芯片。 第一和第二半导体芯片通过第一凸块连接部电连接。 止动器突起和接合突起设置在第一和第二半导体芯片中的至少一个上。 止动突起与未粘合状态的第一和第二半导体芯片中的另一个接触。 接合突起接合到第一和第二半导体芯片。

公开(公告)号：US20100087033A1

公开(公告)日：2010-04-08

申请号：US12570590

申请日：2009-09-30

申请人： Keita Mizoguchi ,  Soichi Homma

发明人： Keita Mizoguchi ,  Soichi Homma

IPC分类号： H01L21/50 ,  H01L21/67

CPC分类号： H01L21/67103 ,  H01L23/3128 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/48091 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A resin layer is formed on a support substrate. An intermediate structure body is formed on the resin layer. The support substrate is fixed to a first unit configured to fix and heat. The intermediate structure body is fixed to a second unit configured to fix and heat. The support substrate and the intermediate structure body are heated by the first unit or the second unit, so as to soften the resin layer. The second unit is moved with respect to the first unit along each of a plurality of line segments or a curve, so as to enlarge a distance between a center of the support substrate and a center of the intermediate structure body as the second unit moves, while the support substrate and the intermediate structure body being kept in the horizontal state, and until the support substrate and the intermediate structure body are separated.

摘要翻译： 树脂层形成在支撑基板上。 在树脂层上形成中间结构体。 支撑基板被固定到构造成固定和加热的第一单元。 中间结构体固定到构造成固定和加热的第二单元。 支撑基板和中间结构体被第一单元或第二单元加热，从而软化树脂层。 第二单元沿着多个线段或曲线中的每一个相对于第一单元移动，以便随着第二单元移动而扩大支撑基板的中心与中间结构体的中心之间的距离， 同时支撑基板和中间结构体保持在水平状态，直到支撑基板和中间结构体分离为止。

公开(公告)号：US08710654B2

公开(公告)日：2014-04-29

申请号：US13477387

申请日：2012-05-22

申请人： Satoshi Tsukiyama ,  Masatoshi Fukuda ,  Hiroshi Watabe ,  Keita Mizoguchi ,  Naoyuki Komuta

发明人： Satoshi Tsukiyama ,  Masatoshi Fukuda ,  Hiroshi Watabe ,  Keita Mizoguchi ,  Naoyuki Komuta

IPC分类号： H01L23/48 ,  H01L29/40

CPC分类号： H01L24/81 ,  H01L21/50 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/14151 ,  H01L2224/14155 ,  H01L2224/14156 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/83104 ,  H01L2224/83815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00

摘要： In one embodiment, a semiconductor device includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first and second semiconductor chips are electrically connected via first bump connection parts. Stopper projections and bonding projections are provided at least one of the first and second semiconductor chips. The stopper projections are in contact with the other of the first and second semiconductor chips in an unbonded state. The bonding projections are bonded to the first and second semiconductor chips.

摘要翻译： 在一个实施例中，半导体器件包括堆叠在第一半导体芯片上的第一半导体芯片和第二半导体芯片。 第一和第二半导体芯片通过第一凸块连接部电连接。 止动器突起和接合突起设置在第一和第二半导体芯片中的至少一个上。 止动突起与未粘合状态的第一和第二半导体芯片中的另一个接触。 接合突起接合到第一和第二半导体芯片。