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13 条记录 (耗时 0.014 秒)

    Thin-film structure for chalcogenide electrical switching devices and process therefor
    5.
    发明授权
    Thin-film structure for chalcogenide electrical switching devices and process therefor 失效
    混合电气开关器件的薄膜结构及其工艺

    公开(公告)号：US5177567A

    公开(公告)日：1993-01-05

    申请号：US732544

    申请日：1991-07-19

    申请人： Patrick J. Klersy ,  David C. Jablonski ,  Stanford R. Ovshinsky

    发明人： Patrick J. Klersy ,  David C. Jablonski ,  Stanford R. Ovshinsky

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1675 ,  H01L45/04 ,  H01L45/06 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1625

    摘要： Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.

    摘要翻译： 本文公开了一种用于克服现有技术中存在的许多设计缺点的由硫族化物材料制成的固态薄膜电开关器件的新型薄膜结构。 本发明的新颖结构在硫族化物材料的主体下方采用绝缘材料薄层，以便仔细地确定丝条的位置。 由于灯丝位置已被固定，所以由于边缘传导路径的切换已被基本消除。 同时，使用薄的绝缘层可防止现有技术的步骤覆盖故障。 绝缘材料薄层承受开关电压的要求是通过使用仅在形成硫族化物材料之后沉积的绝缘体材料的第二较厚层来解决的。 这种改进的结构表现出更高的制造成本和更可重复的电开关特性的优点。

    Memory element with memory material comprising phase-change material and dielectric material
    6.
    发明授权
    Memory element with memory material comprising phase-change material and dielectric material 失效
    具有记忆材料的存储元件包括相变材料和电介质材料

    公开(公告)号：US6087674A

    公开(公告)日：2000-07-11

    申请号：US63174

    申请日：1998-04-20

    申请人： Standford R. Ovshinsky ,  Wolodymyr Czubatyj ,  David A. Strand ,  Patrick J. Klersy ,  Sergey Kostylev ,  Boil Pashmakov

    发明人： Standford R. Ovshinsky ,  Wolodymyr Czubatyj ,  David A. Strand ,  Patrick J. Klersy ,  Sergey Kostylev ,  Boil Pashmakov

    IPC分类号： H01L27/10 ,  G11C16/02 ,  H01L27/105 ,  H01L45/00 ,  H01L47/00

    CPC分类号： G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/144 ,  G11C2213/35 ,  G11C2213/51 ,  G11C2213/52 ,  G11C2213/72

    摘要： An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.

    摘要翻译： 一种电操作的单个单元存储器元件，包括：一定量单个存储单元的存储器材料的体积，所述存储器材料包括相变材料和电介质材料的不均匀混合物; 以及用于将电信号传送到所述存储器材料的体积的至少一部分的装置。 一种电操作的单电池存储元件，包括：限定单个单元存储元件的存储器材料的量，所述存储器材料包括相变材料和介电材料，其中所述相变材料具有多个可检测的电阻率值 并且可以直接设置为电阻率值之一，而不需要根据材料的电阻率值将电阻值设定为特定的起始或擦除电阻率值; 以及用于将电信号传送到存储材料体积的至少一部分的装置。