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    Thin-film structure for chalcogenide electrical switching devices and process therefor
    1.
    发明授权
    Thin-film structure for chalcogenide electrical switching devices and process therefor 失效
    混合电气开关器件的薄膜结构及其工艺

    公开(公告)号：US5177567A

    公开(公告)日：1993-01-05

    申请号：US732544

    申请日：1991-07-19

    申请人： Patrick J. Klersy ,  David C. Jablonski ,  Stanford R. Ovshinsky

    发明人： Patrick J. Klersy ,  David C. Jablonski ,  Stanford R. Ovshinsky

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1675 ,  H01L45/04 ,  H01L45/06 ,  H01L45/126 ,  H01L45/141 ,  H01L45/1625

    摘要： Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.

    摘要翻译： 本文公开了一种用于克服现有技术中存在的许多设计缺点的由硫族化物材料制成的固态薄膜电开关器件的新型薄膜结构。 本发明的新颖结构在硫族化物材料的主体下方采用绝缘材料薄层，以便仔细地确定丝条的位置。 由于灯丝位置已被固定，所以由于边缘传导路径的切换已被基本消除。 同时，使用薄的绝缘层可防止现有技术的步骤覆盖故障。 绝缘材料薄层承受开关电压的要求是通过使用仅在形成硫族化物材料之后沉积的绝缘体材料的第二较厚层来解决的。 这种改进的结构表现出更高的制造成本和更可重复的电开关特性的优点。

    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    6.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开

    公开(公告)号：US20120040518A1

    公开(公告)日：2012-02-16

    申请号：US13284912

    申请日：2011-10-30

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/20

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Optical ovonic threshold switch
    7.
    发明授权
    Optical ovonic threshold switch 失效
    光学超声门限开关

    公开(公告)号：US08111546B2

    公开(公告)日：2012-02-07

    申请号：US12269901

    申请日：2008-11-13

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： G11C11/00

    CPC分类号： H01L45/085 ,  H01L45/1213 ,  H01L45/141 ,  Y10S977/754

    摘要： A method and device for accomplishing transformation of a switching material from a resistive state to a conductive state. The method utilizes a non-electrical source of energy to effect the switching transformation. The switching material may be a chalcogenide switching material, where the non-electrical source of energy initiates switching by liberating lone pair electrons from bound states of chalcogen atoms. The liberated lone pair electrons form a conductive filament having the characteristics of a solid state plasma to permit high current densities to pass through the switching material. The device includes a switching material with electrical contacts and may be interconnected with other elements in a circuit to regulate electrical communication therebetween.

    摘要翻译： 一种用于实现将开关材料从电阻状态转换为导通状态的方法和装置。 该方法利用非电源能量来实现开关变换。 开关材料可以是硫族化物开关材料，其中非电源能量通过从孤硫原子的结合态释放孤对电子而开始切换。 释放的孤对电子形成具有固态等离子体特性的导电丝，以允许高电流密度通过开关材料。 该装置包括具有电触点的开关材料，并且可以与电路中的其它元件互连以调节它们之间的电连通。

    Method of manufacturing a photovoltaic device
    8.
    发明授权
    Method of manufacturing a photovoltaic device 失效
    制造光伏器件的方法

    公开(公告)号：US08062920B2

    公开(公告)日：2011-11-22

    申请号：US12508835

    申请日：2009-07-24

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： H01L21/00

    CPC分类号： H01L31/022425 ,  Y02E10/50

    摘要： A photovoltaic device including a current collection element and a method of making same. The photovoltaic device includes a substrate, a conductive layer, an active photovoltaic material, a transparent electrode and a current collection element. The current collection element includes a transparent support and one or more conductive wires integrated therewith. The conductive wires are in electrical communication with the transparent electrode. Current generated by the active photovoltaic material passes to the transparent electrode. The current collection element facilitates delivery of current passing through the transparent electrode to leads that deliver the current to an external load. The method includes placing a pre-fabricated current collection element in direct contact with the transparent electrode of the photovoltaic device. The time and expense of assembling the conductive wires during fabrication of the photovoltaic device is thereby avoided and higher manufacturing speeds are achieved.

    摘要翻译： 一种包括电流收集元件的光电器件及其制造方法。 光伏器件包括衬底，导电层，活性光伏材料，透明电极和集电元件。 电流收集元件包括透明支撑件和与其集成的一个或多个导电线。 导线与透明电极电连通。 由活性光伏材料产生的电流传递到透明电极。 电流采集元件有助于将通过透明电极的电流传送到将电流传递到外部负载的引线。 该方法包括将预制的电流收集元件放置成与光伏器件的透明电极直接接触。 从而避免了在制造光伏器件期间组装导线的时间和费用，并且实现了更高的制造速度。

    Plasma deposition of amorphous semiconductors at microwave frequencies
    9.
    发明授权
    Plasma deposition of amorphous semiconductors at microwave frequencies 失效
    微波等离子体沉积非晶半导体

    公开(公告)号：US08048782B1

    公开(公告)日：2011-11-01

    申请号：US12855631

    申请日：2010-08-12

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/00

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    摘要翻译： 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Chemical vapor deposition of chalcogenide materials via alternating layers
    10.
    发明授权
    Chemical vapor deposition of chalcogenide materials via alternating layers 有权
    化学气相沉积硫族化物材料经交替层

    公开(公告)号：US07858152B2

    公开(公告)日：2010-12-28

    申请号：US12284425

    申请日：2008-09-22

    申请人： Stanford R. Ovshinsky ,  Smuruthi Kamepalli

    发明人： Stanford R. Ovshinsky ,  Smuruthi Kamepalli

    IPC分类号： C23C16/00

    CPC分类号： C23C16/305 ,  H01L45/04 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

    摘要： A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

    摘要翻译： 用于制备电和光硫族化物材料的化学气相沉积（CVD）工艺。 在优选的实施方案中，瞬时CVD沉积的材料表现出一种或多种以下性质：电开关，积聚，凝固，可逆多态行为，复位，认知功能和可逆非晶晶转换。 在一个实施方案中，包括含有硫属元素的至少一层的多层结构通过CVD沉积，并进行后沉积施加能量以产生具有根据本发明的性质的硫族化物材料。 在另一个实施方案中，具有根据本发明的性质的单层硫族化物材料由包括三种或更多种沉积前体的CVD沉积工艺形成，其中至少一种是硫属元素前体。 优选的材料是含有硫族元素Te和Ge和/或Sb的材料。