公开(公告)号：US08572546B2

公开(公告)日：2013-10-29

申请号：US13371487

申请日：2012-02-13

Applicant: Jaeheon Shin ,  Woo-Seok Cheong ,  Chi-Sun Hwang ,  Sung Mook Chung

Inventor： Jaeheon Shin ,  Woo-Seok Cheong ,  Chi-Sun Hwang ,  Sung Mook Chung

IPC: G06F17/50

CPC classification number: G06F17/5036

Abstract: Methods of modeling a transistor are provided. The method includes the steps of (a) extracting reference mobility values of a channel layer of a transistor including a gate electrode, a source region and a drain region using a reference gate voltage, a reference drain current and a reference drain voltage, (b) fitting a mobility function including model parameters on the reference mobility values to extract the model parameters, and (c) putting the extracted model parameters into a drain current modeling function to calculate a drain current flowing through the channel layer between the drain region and the source region under a bias condition defined by an arbitrary gate voltage applied to the gate electrode and an arbitrary drain voltage applied to the drain region. Related apparatuses are also provided.

Abstract translation: 提供了对晶体管进行建模的方法。 该方法包括以下步骤：（a）使用参考栅极电压，参考漏极电流和参考漏极电压提取包括栅电极，源区和漏区的晶体管的沟道层的参考迁移率值，（b ）将包括模型参数的移动性函数拟合在参考迁移率值上以提取模型参数，以及（c）将所提取的模型参数放入漏极电流建模函数中以计算流过漏极区域和漏极区域之间的沟道层的漏极电流 源极区域由施加到栅极电极的任意栅极电压和施加到漏极区域的任意漏极电压限定的偏置状态。 还提供了相关装置。

公开(公告)号：US20110140097A1

公开(公告)日：2011-06-16

申请号：US12887282

申请日：2010-09-21

Applicant: Woo Seok CHEONG ,  Sung Mook Chung ,  Jun Yong Bak

Inventor： Woo Seok CHEONG ,  Sung Mook Chung ,  Jun Yong Bak

IPC: H01L29/786 ,  H01L29/22 ,  H01L21/44

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.

Abstract translation: 提供了一种薄膜晶体管及其制造方法，其中与含有硼或铝的氮化物结合的氧化物半导体被施加到沟道层。 其中与含有硼或铝的氮化物结合的氧化物半导体施加到沟道层的薄膜晶体管显示出显着改善的迁移率和在高温下增加的稳定性。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

Applicant: Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

Inventor： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC: H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC classification number: H01L29/7869 ,  C23C14/08 ,  H01L29/247

Abstract: Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

Abstract translation: 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US20120297351A1

公开(公告)日：2012-11-22

申请号：US13371487

申请日：2012-02-13

Applicant: Jaeheon SHIN ,  Woo-Seok Cheong ,  Chi-Sun Hwang ,  Sung Mook Chung

Inventor： Jaeheon SHIN ,  Woo-Seok Cheong ,  Chi-Sun Hwang ,  Sung Mook Chung

IPC: G06F17/50

CPC classification number: G06F17/5036

Abstract: Methods of modeling a transistor are provided. The method includes the steps of (a) extracting reference mobility values of a channel layer of a transistor including a gate electrode, a source region and a drain region using a reference gate voltage, a reference drain current and a reference drain voltage, (b) fitting a mobility function including model parameters on the reference mobility values to extract the model parameters, and (c) putting the extracted model parameters into a drain current modeling function to calculate a drain current flowing through the channel layer between the drain region and the source region under a bias condition defined by an arbitrary gate voltage applied to the gate electrode and an arbitrary drain voltage applied to the drain region. Related apparatuses are also provided.

Abstract translation: 提供了对晶体管进行建模的方法。 该方法包括以下步骤：（a）使用参考栅极电压，参考漏极电流和参考漏极电压提取包括栅电极，源区和漏区的晶体管的沟道层的参考迁移率值，（b ）将包括模型参数的移动性函数拟合在参考迁移率值上以提取模型参数，以及（c）将所提取的模型参数放入漏极电流建模函数中以计算流过漏极区域和漏极区域之间的沟道层的漏极电流 源极区域由施加到栅极电极的任意栅极电压和施加到漏极区域的任意漏极电压限定的偏置状态。 还提供了相关装置。

公开(公告)号：US08071434B2

公开(公告)日：2011-12-06

申请号：US12560702

申请日：2009-09-16

Applicant: Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

Inventor： Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

IPC: H01L21/338

CPC classification number: H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.

Abstract translation: 提供了一种制造薄膜晶体管的方法，该薄膜晶体管包括形成在基板上的源电极和漏电极，新颖的沟道层，栅极绝缘层和栅极电极。 该方法包括使用掺杂有硼的氧化物半导体形成沟道层的步骤; 并图形化沟道层。 形成的沟道层是掺杂有硼的氧化物半导体薄膜。 薄膜晶体管的电特性和高温稳定性显着提高。

公开(公告)号：US07337089B2

公开(公告)日：2008-02-26

申请号：US11176734

申请日：2005-07-07

Applicant: Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

Inventor： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

IPC: G06F19/00

CPC classification number: H04N17/04 ,  G02F1/1309 ,  G09G2320/043 ,  G09G2360/145 ,  H05B33/0896

Abstract: Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.

Abstract translation: 提供一种用于测量显示面板的图像和寿命的装置，包括：具有至少一个用于测量的显示面板的室，并且用于均匀地保持内部的温度和湿度条件; 至少一个相机安装在所述室中以获得所述显示面板的图像信号; 偏置电源和测量部件，用于提供根据控制信号测量所需的脉冲偏置电压和电流，以及在显示面板驱动时测量电压和电流转换为数字数据; 用于将通过照相机获得的图像信号转换成数字数据的转换器; 以及控制和数据处理部分，用于通过从偏置供应和测量部分和转换器接收数字数据来产生参数，以及使用参数分析显示面板的寿命。

公开(公告)号：US08563356B2

公开(公告)日：2013-10-22

申请号：US12887282

申请日：2010-09-21

Applicant: Woo Seok Cheong ,  Sung Mook Chung ,  Jun Yong Bak

Inventor： Woo Seok Cheong ,  Sung Mook Chung ,  Jun Yong Bak

IPC: H01L21/00

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.

Abstract translation: 提供了一种薄膜晶体管及其制造方法，其中与含有硼或铝的氮化物结合的氧化物半导体被施加到沟道层。 其中与含有硼或铝的氮化物结合的氧化物半导体施加到沟道层的薄膜晶体管显示出显着改善的迁移率和在高温下增加的稳定性。

公开(公告)号：US20120298985A1

公开(公告)日：2012-11-29

申请号：US13475366

申请日：2012-05-18

Applicant: Sung Mook CHUNG ,  Woo-Seok Cheong ,  Jaeheon Shin ,  Chan Hwa Hong

Inventor： Sung Mook CHUNG ,  Woo-Seok Cheong ,  Jaeheon Shin ,  Chan Hwa Hong

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78693

Abstract: Provided are a thin film transistor able to increase or maximize productivity and production yield, and a method of fabricating the same. The method of fabricating the thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an active layer formed of an amorphous oxide semiconductor on the gate insulating layer, and respectively forming a source electrode and a drain electrode on both sides of the active layer above the gate electrode. The amorphous oxide semiconductor of the active layer may be doped with a metal oxide dielectric.

Abstract translation: 提供能够增加或最大化生产率和生产率的薄膜晶体管及其制造方法。 制造薄膜晶体管的方法包括：在基板上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成由非晶氧化物半导体形成的有源层，分别形成源电极和 位于栅电极上方的有源层的两侧的漏电极。 有源层的无定形氧化物半导体可以掺杂有金属氧化物电介质。

公开(公告)号：US20120032186A1

公开(公告)日：2012-02-09

申请号：US13239810

申请日：2011-09-22

Applicant: Jeong Ik LEE ,  Hye Yong CHU ,  Lee Mi DO ,  Sang Hee PARK ,  Chi Sun HWANG ,  Yong Suk YANG ,  Sung Mook CHUNG

Inventor： Jeong Ik LEE ,  Hye Yong CHU ,  Lee Mi DO ,  Sang Hee PARK ,  Chi Sun HWANG ,  Yong Suk YANG ,  Sung Mook CHUNG

IPC: H01L33/02

CPC classification number: H01L51/5036

Abstract: Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index.

Abstract translation: 提供了一种白色有机发光器件（OLED），包括：形成在衬底上的第一电极; 形成在所述第一电极上的空穴传输层; 形成在空穴传输层上的发光层; 形成在发光层上的电子传输层; 以及形成在空穴传输层，发射层和电子传输层中的至少一个上的颜色控制层，并且通过从发射层的能量转移发射绿色和/或红色。 白色OLED以高效率发出红色，绿色和蓝色光，具有优异的色彩再现性和高色彩再现指数。

公开(公告)号：US20060049768A1

公开(公告)日：2006-03-09

申请号：US11176734

申请日：2005-07-07

Applicant: Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

Inventor： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

IPC: H05B37/02

CPC classification number: H04N17/04 ,  G02F1/1309 ,  G09G2320/043 ,  G09G2360/145 ,  H05B33/0896

Abstract: Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.

Abstract translation: 提供一种用于测量显示面板的图像和寿命的装置，包括：具有至少一个用于测量的显示面板的室，并且用于均匀地保持内部的温度和湿度条件; 至少一个相机安装在所述室中以获得所述显示面板的图像信号; 偏置电源和测量部件，用于提供根据控制信号测量所需的脉冲偏置电压和电流，以及在显示面板驱动时测量电压和电流转换为数字数据; 用于将通过照相机获得的图像信号转换成数字数据的转换器; 以及控制和数据处理部分，用于通过从偏置供应和测量部分和转换器接收数字数据来产生参数，以及使用参数分析显示面板的寿命。