Interconnect structure and method of making same
    4.
    发明授权
    Interconnect structure and method of making same 有权
    互连结构及其制作方法

    公开(公告)号:US08772933B2

    公开(公告)日:2014-07-08

    申请号:US11954812

    申请日:2007-12-12

    IPC分类号: H01L23/48

    摘要: An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

    摘要翻译: 提供了互连结构及其制造方法。 更具体地,互连结构是无缺陷的封装互连结构。 该结构包括形成在没有帽材料的平坦化介电层的沟槽中的导电材料。 该结构还包括形成在导电材料上以防止迁移的盖材料。 形成结构的方法包括在电介质材料上选择性地沉积牺牲材料,并在介电材料的沟槽内的导电层上提供金属覆盖层。 该方法还包括用其上的任何不需要的沉积或有核的金属覆盖层去除牺牲材料。

    Method and system for providing backlighting utilizing a luminescent impregnated material
    5.
    发明授权
    Method and system for providing backlighting utilizing a luminescent impregnated material 有权
    使用发光浸渍材料提供背光的方法和系统

    公开(公告)号:US06637905B1

    公开(公告)日:2003-10-28

    申请号:US10255208

    申请日:2002-09-26

    申请人: Kee Yean Ng Wen Ya Ou

    发明人: Kee Yean Ng Wen Ya Ou

    IPC分类号: F21V704

    摘要: An apparatus is directed to providing backlighting utilizing luminescent impregnated material. The apparatus includes a radiation source providing a first radiation and a filter layer optically coupled to the radiation source including a luminescent material designed to absorb the first radiation, and emit one or more radiations. The apparatus further includes a light guide optically coupled to the filter layer and designed to receive the emitted radiation and reflect at least a portion of the emitted radiation. The apparatus additionally includes a display layer optically coupled to the light guide and designed to receive the reflected radiation. The system provides means for providing a first radiation, means for absorbing the first radiation, means for emitting one or more radiations based on the absorbed first radiation, means for receiving the emitted radiation, means for reflecting the emitted radiation, and means for receiving the reflected emitted radiation.

    摘要翻译: 一种装置旨在使用发光浸渍材料提供背光。 该装置包括提供第一辐射的辐射源和与辐射源光学耦合的滤光层,包括设计成吸收第一辐射的发光材料,并且发射一个或多个辐射。 该装置还包括光导耦合到滤光层并被设计成接收发射的辐射并反射所发射的辐射的至少一部分的光导。 该装置还包括光学耦合到光导并被设计成接收反射辐射的显示层。 该系统提供用于提供第一辐射的装置,用于吸收第一辐射的装置,用于基于所吸收的第一辐射发射一个或多个辐射的装置,用于接收所发射的辐射的装置,用于反射所发射的辐射的装置,以及用于接收 反射辐射。

    INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME
    6.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME 有权
    互连结构及其制作方法

    公开(公告)号:US20120171862A1

    公开(公告)日:2012-07-05

    申请号:US13415159

    申请日:2012-03-08

    IPC分类号: H01L21/768

    摘要: An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

    摘要翻译: 提供了互连结构及其制造方法。 更具体地,互连结构是无缺陷的封装互连结构。 该结构包括形成在没有帽材料的平坦化介电层的沟槽中的导电材料。 该结构还包括形成在导电材料上以防止迁移的盖材料。 形成结构的方法包括在电介质材料上选择性地沉积牺牲材料,并在介电材料的沟槽内的导电层上提供金属覆盖层。 该方法还包括用其上的任何不需要的沉积或有核的金属覆盖层去除牺牲材料。

    Color management system
    7.
    发明授权
    Color management system 有权
    色彩管理系统

    公开(公告)号:US07938557B2

    公开(公告)日:2011-05-10

    申请号:US11020998

    申请日:2004-12-23

    IPC分类号: B60Q1/26

    摘要: A light source and a method for operating the same are disclosed. The light source includes a light emitter and a controller. The light emitter generates light in response to a control signal coupled thereto. The light emitter is characterized by an age related to the amount of light that has been cumulatively generated by the light emitter, the generated light for a given control signal changing with the age. The controller measures the age of the light emitter and generates the control signal based on the desired light intensity and the measured age of the light emitter. In one embodiment, the controller stores an age value for the light emitter, and the controller determines the control signal in response to an input signal specifying a desired light intensity from the light emitter, the controller updating the age value each time the control signal is determined.

    摘要翻译: 公开了一种光源及其操作方法。 光源包括光发射器和控制器。 光发射器响应于耦合到其的控制信号而产生光。 光发射器的特征在于与由光发射器累积产生的光量相关的年龄,对于给定的控制信号随着年龄的变化而产生的光。 控制器测量光发射器的年龄,并根据所需的光强度和发光体的测量年龄产生控制信号。 在一个实施例中,控制器存储光发射器的老化值,并且控制器响应于指定来自光发射器的期望光强度的输入信号来确定控制信号,控制器在每次控制信号为 决心。

    METHOD FOR PROTECTING POROUS LOW-K DIELECTRIC POST CHEMICAL MECHANICAL PLANARIZATION
    8.
    发明申请
    METHOD FOR PROTECTING POROUS LOW-K DIELECTRIC POST CHEMICAL MECHANICAL PLANARIZATION 审中-公开
    用于保护多孔低K电介质化学机械平面化方法

    公开(公告)号:US20090142885A1

    公开(公告)日:2009-06-04

    申请号:US11947858

    申请日:2007-11-30

    IPC分类号: H01L21/02

    摘要: A method of forming a semiconductor structure chemically-mechanically polishes (CMP) a semiconductor structure before applying a sealant layer over the porous low-k dielectric. The process of applying the sealant layer is a selective process that causes the sealant to adhere to or deposit onto the porous low-k dielectric and to not adhere to the copper conductors. After the sealant layer is formed, the cap is applied. The parylene layer seals the pores in the low-k dielectric which prevents the low-k dielectric layer from being damaged during the cap pre-cleaning process and also prevents the cap material from penetrating into the low-k dielectric.

    摘要翻译: 在多孔低k电介质上施加密封剂层之前,半导体结构的形成方法化学机械抛光(CMP)半导体结构。 施加密封剂层的过程是使密封剂粘附或沉积到多孔低k电介质上并且不粘附到铜导体的选择性过程。 在形成密封剂层之后,施加盖。 聚对二甲苯层密封低k电介质中的孔,防止低k电介质层在盖预清洁过程中受损,并且还防止盖材料渗入低k电介质。