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公开(公告)号：US20240160096A1
公开(公告)日：2024-05-16
申请号：US18420846
申请日：2024-01-24
Applicant: AGC Inc.
Inventor： Yuya NAGATA , Daijiro AKAGI , Kenichi SASAKI , Hiroaki IWAOKA
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.
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公开(公告)号：US20240152044A1
公开(公告)日：2024-05-09
申请号：US18411376
申请日：2024-01-12
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hiroaki IWAOKA , Shunya TAKI , Kenichi SASAKI , Ichiro ISHIKAWA , Toshiyuki UNO
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.
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公开(公告)号：US20240241433A1
公开(公告)日：2024-07-18
申请号：US18621502
申请日：2024-03-29
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Takuma KATO , Keishi TSUKIYAMA , Toshiyuki UNO , Hiroshi HANEKAWA , Ryusuke OISHI , Sadatatsu IKEDA , Yukihiro IWATA , Chikako HANZAWA
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
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公开(公告)号：US20240045320A1
公开(公告)日：2024-02-08
申请号：US18382356
申请日：2023-10-20
Applicant: AGC Inc.
Inventor： Takuma KATO , Daijiro AKAGI , Takeshi OKATO , Ryusuke OISHI , Yusuke ONO
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.
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公开(公告)号：US20230251564A1
公开(公告)日：2023-08-10
申请号：US18193674
申请日：2023-03-31
Applicant: AGC Inc.
Inventor： Shunya TAKI , Hiroaki IWAOKA , Daijiro AKAGI , Ichiro ISHIKAWA
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of
0.625 MP1+MP2≤1000.-
Patent Agency Ranking
公开(公告)号：US20220035234A1
公开(公告)日：2022-02-03
申请号：US17382755
申请日：2021-07-22
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hirotomo KAWAHARA , Toshiyuki UNO , Ichiro ISHIKAWA , Kenichi SASAKI
IPC: G03F1/24 , G03F1/32 , H01L21/033
Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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公开(公告)号：US20240295807A1
公开(公告)日：2024-09-05
申请号：US18649410
申请日：2024-04-29
Applicant: AGC Inc.
Inventor： Yuya NAGATA , Daijiro AKAGI , Kenichi SASAKI , Hiroaki IWAOKA
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains Ir as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θ range of 35° to 45° to an average value of an intensity of the diffracted light in a 2θ range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.
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公开(公告)号：US20240176224A1
公开(公告)日：2024-05-30
申请号：US18394787
申请日：2023-12-22
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Shunya TAKI , Takuma KATO , Ichiro ISHIKAWA , Kenichi SASAKI
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order.
The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.-
公开(公告)号：US20240168370A1
公开(公告)日：2024-05-23
申请号：US18382269
申请日：2023-10-20
Applicant: AGC Inc.
Inventor： Shunya TAKI , Hiroaki IWAOKA , Daijiro AKAGI , Ichiro ISHIKAWA
Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1):
0.625 MP1+MP2≤1000 (1).-
10.发明公开公开(公告)号：US20230288794A1
公开(公告)日：2023-09-14
申请号：US18321913
申请日：2023-05-23
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hirotomo KAWAHARA , Kenichi SASAKI , Ichiro ISHIKAWA , Toshiyuki UNO
Abstract: A reflective mask blank for EUV lithography, includes, in the following order, a substrate, a multilayer reflective film reflecting EUV light, a protective film for the multilayer reflective film, and an absorption layer absorbing EUV light, in which the protective film includes rhodium (Rh) or a rhodium material including Rh and at least one element selected from the group consisting of nitrogen (N), oxygen (O), carbon (C), boron (B), ruthenium (Ru), niobium (Nb), molybdenum (Mo), tantalum (Ta), iridium (Ir), palladium (Pd), zirconium (Zr), and titanium (Ti).
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