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    PHYSICAL VAPOR DEPOSITION ( PVD) CHAMBER WITH REDUCED ARCING
    3.
    发明申请
    PHYSICAL VAPOR DEPOSITION ( PVD) CHAMBER WITH REDUCED ARCING 审中-公开

    公开(公告)号：US20200051795A1

    公开(公告)日：2020-02-13

    申请号：US16285043

    申请日：2019-02-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： CHAO DU ,  YONG CAO ,  CHEN GONG ,  MINGDONG LI ,  FUHONG ZHANG ,  RONGJUN WANG ,  XIANMIN TANG

    IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

    Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

    PASTE METHOD TO REDUCE DEFECTS IN DIELECTRIC SPUTTERING
    4.
    发明申请
    PASTE METHOD TO REDUCE DEFECTS IN DIELECTRIC SPUTTERING 审中-公开

    公开(公告)号：US20180223421A1

    公开(公告)日：2018-08-09

    申请号：US15426102

    申请日：2017-02-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： XIAODONG WANG ,  RONGJUN WANG ,  HANBING WU

    IPC: C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  C23C14/58 ,  H01J37/34

    Abstract: Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.

    PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION
    5.
    发明申请
    PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION 审中-公开

    公开(公告)号：US20180087147A1

    公开(公告)日：2018-03-29

    申请号：US15830924

    申请日：2017-12-04

    Applicant: APPLIED MATERIALS, INC.

    Inventor： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

    IPC: C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

    RESISTANCE-AREA (RA) CONTROL IN LAYERS DEPOSITED IN PHYSICAL VAPOR DEPOSITION CHAMBER
    6.
    发明申请
    RESISTANCE-AREA (RA) CONTROL IN LAYERS DEPOSITED IN PHYSICAL VAPOR DEPOSITION CHAMBER 审中-公开

    公开(公告)号：US20190292651A1

    公开(公告)日：2019-09-26

    申请号：US16358465

    申请日：2019-03-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： RONGJUN WANG ,  XIAODONG WANG ,  CHAO DU

    IPC: C23C14/14 ,  C23C14/34

    Abstract: Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

    PLASMA CHAMBER TARGET FOR REDUCING DEFECTS IN WORKPIECE DURING DIELECTRIC SPUTTERING
    7.
    发明申请
    PLASMA CHAMBER TARGET FOR REDUCING DEFECTS IN WORKPIECE DURING DIELECTRIC SPUTTERING 审中-公开

    公开(公告)号：US20180291500A1

    公开(公告)日：2018-10-11

    申请号：US15482242

    申请日：2017-04-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： XIAODONG WANG ,  RONGJUN WANG ,  HANBING WU

    IPC: C23C14/54 ,  H01J37/34 ,  C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

    Abstract: Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.

    EXTENDED DARK SPACE SHIELD
    9.
    发明申请
    EXTENDED DARK SPACE SHIELD 审中-公开
    延伸的空间明暗

    公开(公告)号：US20150075980A1

    公开(公告)日：2015-03-19

    申请号：US14486223

    申请日：2014-09-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： THANH NGUYEN ,  RONGJUN WANG ,  MUHAMMAD M. RASHEED ,  XIANMIN TANG

    IPC: H01J37/32 ,  C23C14/34

    CPC classification number: H01J37/3441 ,  C23C14/34 ,  C23C14/564

    Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 2:1 to about 1.6:1.

    Abstract translation: 提供了用于物理气相沉积的装置。 在一些实施例中，用于物理气相沉积基板处理室的装置包括具有穿过过程屏蔽体的中心开口并限定基板处理室的处理体积的过程屏蔽，其中过程屏蔽包括环形 由陶瓷材料制成的暗空间屏蔽和由导电材料制成的环形接地屏蔽，并且其中所述环形暗空间屏蔽件的长度与所述环形接地屏蔽件的长度的比率为约2:1至约1.6:1 。

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