ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID
    1.
    发明申请
    ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID 审中-公开
    原子层沉积室与热引线

    公开(公告)号:US20160097119A1

    公开(公告)日:2016-04-07

    申请号:US14507780

    申请日:2014-10-06

    Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

    Abstract translation: 本文提供了用于清洁原子层沉积室的方法和装置。 在一些实施例中,腔室盖组件包括:壳体,其包围沿着中心轴线延伸并具有上部和下部的中心通道; 盖板,其联接到壳体并且具有轮廓的底表面,其从耦合到中心通道的下部的中心开口向下和向外延伸到盖板的周边部分; 第一加热元件,用于加热中心通道; 第二加热元件,用于加热盖板的底面; 流体耦合到中央通道的远程等离子体源; 以及耦合在所述远程等离子体源和所述壳体之间的隔离套环,其中所述隔离套环具有延伸穿过所述隔离套环的内部通道,以流体地耦合所述远程等离子体源和所述中央通道。

    SHOWERHEAD FOR ALD PRECURSOR DELIVERY

    公开(公告)号:US20210187521A1

    公开(公告)日:2021-06-24

    申请号:US16721724

    申请日:2019-12-19

    Abstract: Embodiments of showerheads for use in a process chamber are provided herein. In some embodiments, a showerhead includes a first spiral channel extending from a central region to a peripheral region of the showerhead; a second spiral channel extending from a central region to a peripheral region of the showerhead, wherein the second spiral channel is interleaved with the first spiral channel and fluidly independent from the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a singular channel extending at an angle; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a singular channel extending at an angle.

    SELECTIVELY GROUNDABLE COVER RING FOR SUBSTRATE PROCESS CHAMBERS
    4.
    发明申请
    SELECTIVELY GROUNDABLE COVER RING FOR SUBSTRATE PROCESS CHAMBERS 有权
    用于衬底过程池的选择性接地套管

    公开(公告)号:US20140262763A1

    公开(公告)日:2014-09-18

    申请号:US13831363

    申请日:2013-03-14

    Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

    Abstract translation: 本文提供了用于基板处理室的处理套件的实施例。 在一些实施例中,用于衬底处理室的处理套件可以包括具有本体和从主体径向向内延伸的唇缘的环,其中主体具有形成在主体的底部中的第一环形通道; 环形导电屏蔽件,其具有下部向内延伸的凸缘,其终止于构造成与环的第一环形通道相接合的向上延伸部分; 以及当所述环设置在所述导电屏蔽上时,所述导电构件将所述环电耦合到所述导电屏蔽层。

    HIGH TEMPERATURE ROTATION MODULE FOR A PROCESSING CHAMBER

    公开(公告)号:US20190390337A1

    公开(公告)日:2019-12-26

    申请号:US16017702

    申请日:2018-06-25

    Abstract: Embodiments of substrate processing equipment and rotatable substrate supports incorporating the same are provided herein. In some embodiments, the substrate support may include a pedestal having a substrate receiving surface, a shaft having an upper end, a lower end, and a central opening, where the shaft is coupled to the pedestal at the upper end, a hub circumscribing the shaft, where the shaft is rotatable with respect to the hub, and where the hub includes a first port that extends from an outer surface of the hub to a volume between the hub and the shaft, and a ferrofluid sealing assembly disposed between the hub and the shaft.

    SHOWERHEAD AND PROCESS CHAMBER INCORPORATING SAME

    公开(公告)号:US20190048467A1

    公开(公告)日:2019-02-14

    申请号:US15847339

    申请日:2017-12-19

    Abstract: Showerheads and process chambers incorporating same are provided herein. In some embodiments, a showerhead includes a body having a central portion and an outer portion, wherein the outer portion includes an annular wall extending upward from the central portion and a flange extending radially outward from the annular wall; a plurality of apertures disposed through the central portion; an annular stepped portion disposed radially outward of outermost ones of the plurality of apertures and radially inward of the outer portion; a plurality of positioning features arranged about a central axis of the showerhead and formed in a periphery of the outer portion; and a plurality of coupling features arranged about the central axis and formed in the periphery of the outer portion.

    GIMBAL ASSEMBLY FOR HEATER PEDESTAL
    7.
    发明申请

    公开(公告)号:US20190078725A1

    公开(公告)日:2019-03-14

    申请号:US15719985

    申请日:2017-09-29

    Abstract: Embodiments of the present disclosure are directed to a gimbal assembly, that includes a gimbal plate having a central opening, a pivot screw disposed within a pivot mount formed in the gimbal plate, wherein the pivot screw includes a spherical pivot head about which the gimbal plate pivots, one or more motors coupled to the gimbal plate configured to provide in-situ gimbal plate motion about the spherical pivot head, and a plurality of leveling indicators configured that determine deflection of gimbal plate.

    METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER
    8.
    发明申请
    METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER 审中-公开
    用于改善衬底加工室中气体流动的方法和装置

    公开(公告)号:US20150345019A1

    公开(公告)日:2015-12-03

    申请号:US14291807

    申请日:2014-05-30

    Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.

    Abstract translation: 本文提供了用于改善衬底处理室中的气体流动的方法和装置的实施例。 在一些实施例中,衬底处理室包括:室主体和限定内部容积的室盖; 衬底支撑件,其设置在所述内部容积内并具有支撑表面以支撑衬底; 气体通道,设置在与基板支撑件相对的盖中,以将气体混合物供应到内部空间,气体通道包括第一部分和第二部分; 设置在第一部分中以将第一气体供应到气体通道的第一部分的第一气体入口; 以及设置在所述第二部分中以将第二气体供应到所述第二部分的第二气体入口。

    TARGET RETAINING APPARATUS
    9.
    发明申请
    TARGET RETAINING APPARATUS 审中-公开
    目标保持装置

    公开(公告)号:US20150203960A1

    公开(公告)日:2015-07-23

    申请号:US14600915

    申请日:2015-01-20

    CPC classification number: H01J37/3435

    Abstract: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.

    Abstract translation: 本文提供了包含相同的目标保持装置和基板处理室的实施例。 在一些实施例中,目标保持装置包括壳体,其包括第一槽和第二槽; 可移动地设置在所述壳体中的凸轮,其中所述凸轮的运动沿着所述第一狭槽被限制; 可移动地联接到所述凸轮的保持臂,其中所述保持臂的运动沿着所述第二狭槽被限制; 连接构件,其包括可旋转地联接到所述凸轮的第一端和可旋转地联接到所述保持臂的第二端; 以及将所述凸轮偏压到所述保持臂远离所述壳体延伸的第一位置的偏压元件。

    SURFACE TREATED ALUMINUM NITRIDE BAFFLE
    10.
    发明申请
    SURFACE TREATED ALUMINUM NITRIDE BAFFLE 审中-公开
    表面处理的硝酸铝

    公开(公告)号:US20160145743A1

    公开(公告)日:2016-05-26

    申请号:US14947594

    申请日:2015-11-20

    Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

    Abstract translation: 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中,用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体,其中,主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中,主体可以具有中心杆和外环,其与中心杆的下部连接并径向向外延伸。 在一些实施方案中,制造挡板的方法可以包括烧结铝,氮和金属氧化物结合剂以形成挡板的主体,所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

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