公开(公告)号：US20160240367A1

公开(公告)日：2016-08-18

申请号：US14622603

申请日：2015-02-13

Applicant: ASM IP Holding B.V.

Inventor： Yosuke Kimura ,  David de Roest

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45538 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219

Abstract: A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped silicon oxide film on a substrate; continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation; and continuously forming a silicon nitride (SiN) film as a cap film on the treated surface of the ASG film.

Abstract translation: 在基板上形成具有盖膜的掺杂氧化硅膜的方法包括：在基板上形成作为砷（As）掺杂的氧化硅膜的砷硅酸盐玻璃（ASG）膜; 用没有激发的Si，N和H构成的处理气体连续处理ASG膜的表面; 并在ASG膜的处理表面上连续地形成作为盖膜的氮化硅（SiN）膜。

公开(公告)号：US08785215B2

公开(公告)日：2014-07-22

申请号：US13901341

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Yosuke Kimura ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/00 ,  H01L21/768

CPC classification number: H01L21/76825 ,  C23C16/045 ,  C23C16/45527 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).

Abstract translation: 一种用于修复电介质膜的工艺相关损伤的方法包括：（i）在不存在反应性物质的情况下，在不沉积膜的情况下，在损坏的电介质膜的表面上吸附含硅的第一气体，（ii）吸附含有 在电介质膜的表面上形成硅，然后在电介质膜的表面上施加反应性物质，以在其上形成单层膜，和（iii）重复步骤（ii）。 在步骤（i）中将表面暴露于第一气体的持续时间比在步骤（ii）中将表面暴露于第二气体的持续时间长。

公开(公告)号：US09478415B2

公开(公告)日：2016-10-25

申请号：US14622603

申请日：2015-02-13

Applicant: ASM IP Holding B.V.

Inventor： Yosuke Kimura ,  David de Roest

IPC: H01L21/31 ,  H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45538 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219

Abstract: A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped silicon oxide film on a substrate; continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation; and continuously forming a silicon nitride (SiN) film as a cap film on the treated surface of the ASG film.

Abstract translation: 在基板上形成具有盖膜的掺杂氧化硅膜的方法包括：在基板上形成作为砷（As）掺杂的氧化硅膜的砷硅酸盐玻璃（ASG）膜; 用没有激发的Si，N和H构成的处理气体连续处理ASG膜的表面; 并在ASG膜的处理表面上连续地形成作为盖膜的氮化硅（SiN）膜。

公开(公告)号：US20150287591A1

公开(公告)日：2015-10-08

申请号：US14686595

申请日：2015-04-14

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Yosuke Kimura ,  Kunitoshi Namba ,  Wataru Adachi ,  Hideaki Fukuda ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed

IPC: H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/2254 ,  H01L21/31111

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.

Abstract translation: 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在低于约400℃的温度下在基材上分解。含硼和碳的一种或多种膜可以具有小于约30埃的厚度。 提供掺杂半导体衬底的方法。 掺杂半导体衬底可以包括通过在大约300℃至大约450℃的工艺温度下将衬底暴露于气相硼前体而在半导体衬底上沉积硼和碳膜，其中硼前体包括硼， 碳和氢，并在约800℃至约1200℃的温度下退火硼和碳膜。

公开(公告)号：US20130337583A1

公开(公告)日：2013-12-19

申请号：US13901341

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Yosuke Kimura ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/768

CPC classification number: H01L21/76825 ,  C23C16/045 ,  C23C16/45527 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).

Abstract translation: 一种用于修复电介质膜的工艺相关损伤的方法包括：（i）在不存在反应性物质的情况下，在不沉积膜的情况下，在损坏的电介质膜的表面上吸附含硅的第一气体，（ii）吸附含有 在电介质膜的表面上形成硅，然后在电介质膜的表面上施加反应性物质，以在其上形成单层膜，和（iii）重复步骤（ii）。 在步骤（i）中将表面暴露于第一气体的持续时间比在步骤（ii）中将表面暴露于第二气体的持续时间长。

公开(公告)号：US09576790B2

公开(公告)日：2017-02-21

申请号：US14686595

申请日：2015-04-14

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Yosuke Kimura ,  Kunitoshi Namba ,  Wataru Adachi ,  Hideaki Fukuda ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  H01L21/311

CPC classification number: H01L21/02112 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/2254 ,  H01L21/31111

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.

Abstract translation: 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在低于约400℃的温度下在基材上分解。含硼和碳的一种或多种膜可以具有小于约30埃的厚度。 提供掺杂半导体衬底的方法。 掺杂半导体衬底可以包括通过在大约300℃至大约450℃的工艺温度下将衬底暴露于气相硼前体而在半导体衬底上沉积硼和碳膜，其中硼前体包括硼， 碳和氢，并在约800℃至约1200℃的温度下退火硼和碳膜。