公开(公告)号：US11447861B2

公开(公告)日：2022-09-20

申请号：US15380921

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  C23C16/56

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20230178371A1

公开(公告)日：2023-06-08

申请号：US18061260

申请日：2022-12-02

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  David Kurt De Roest ,  Marko Tuominen

IPC: H01L21/033 ,  H01L21/3213

CPC classification number: H01L21/0337 ,  H01L21/0332 ,  H01L21/32139 ,  C23C16/45529

Abstract: The disclosure relates to methods of depositing an etch-stop layer on a patterned hard mask is disclosed. The method comprises providing a substrate comprising the patterned hard mask in a reaction chamber, selectively depositing passivation material on the first material; and selectively depositing an etch-stop layer on the on the second material. The patterned hard mask comprises a first material and a second material, and the second material forms partially the surface of the substrate. The disclosure further relates to a semiconductor structure, to a device and to a deposition assembly.

公开(公告)号：US20240201596A1

公开(公告)日：2024-06-20

申请号：US18528314

申请日：2023-12-04

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Yoann Tomczak ,  Charles Dezelah ,  Ivan Zyulkov ,  David Kurt De Roest ,  Michael Givens ,  Daniele Piumi

IPC: G03F7/16 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0045 ,  G03F7/165

Abstract: Methods and related systems for forming an EUV sensitive film on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first deposition pulse and a second deposition pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises a metal precursor. The second precursor pulse comprises exposing the substrate to a second precursor. The second precursor comprises a heterocyclic organic compound.

公开(公告)号：US20200013626A1

公开(公告)日：2020-01-09

申请号：US16517122

申请日：2019-07-19

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt De Roest

IPC: H01L21/285 ,  C23C16/04 ,  H01L21/48 ,  C23C16/455 ,  C23C16/06 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/28 ,  H01L21/3065

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US09916980B1

公开(公告)日：2018-03-13

申请号：US15380895

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Werner Knaepen ,  Jan Willem Maes ,  Bert Jongbloed ,  Krzysztof Kamil Kachel ,  Dieter Pierreux ,  David Kurt De Roest

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0337 ,  C23C16/045 ,  C23C16/45525

Abstract: A method of forming a layer on a substrate is provided by providing the substrate with a hardmask material. The hardmask material is infiltrated with infiltration material during N infiltration cycles by: a) providing a first precursor to the hardmask material on the substrate in the reaction chamber for a first period T1; b) removing a portion of the first precursor for a second period T2; and, c) providing a second precursor to the hardmask material on the substrate for a third period T3, allowing the first and second precursor to react with each other forming the infiltration material.

公开(公告)号：US12000042B2

公开(公告)日：2024-06-04

申请号：US17885810

申请日：2022-08-11

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/26 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  C23C16/56 ,  H01L21/033

CPC classification number: C23C16/45523 ,  C23C16/04 ,  C23C16/042 ,  C23C16/045 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0332 ,  H01L21/0337

Abstract: A sequential infiltration synthesis apparatus comprising:



a reaction chamber constructed and arranged to hold at least a first substrate;
a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and,
a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by:
activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber;
activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and,
activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20220389578A1

公开(公告)日：2022-12-08

申请号：US17885810

申请日：2022-08-11

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  C23C16/56

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20180171475A1

公开(公告)日：2018-06-21

申请号：US15380921

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt De Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  C23C16/448 ,  C23C16/04

CPC classification number: C23C16/45523 ,  C23C16/042 ,  C23C16/045 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0332 ,  H01L21/0337

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.