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1.发明公开公开(公告)号：US20230213871A1
公开(公告)日：2023-07-06
申请号：US18000087
申请日：2021-05-14
Applicant: ASML Netherlands B.V. , ASML Holding N.V.
Inventor： Sebastianus Adrianus GOORDEN , Filippo ALPEGGIANI , Simon Reinald HUISMAN , Johannes Jacobus Matheus BASELMANS , Haico Victor KOK , Mohamed SWILLAM , Arjan Johannes Anton BEUKMAN
CPC classification number: G03F7/70625 , G01B11/272 , G03F9/7049
Abstract: A metrology system includes a radiation source, first, second, and third optical systems, and a processor. The first optical system splits the radiation into first and second beams of radiation and impart one or more phase differences between the first and second beams. The second optical system directs the first and second beams toward a target structure to produce first and second scattered beams of radiation. The third optical system interferes the first and second scattered beams at an imaging detector. The imaging detector generates a detection signal based on the interfered first and second scattered beams. The metrology system modulates one or more phase differences of the first and second scattered beams based on the imparted one or more phase differences. The processor analyzes the detection signal to determine a property of the target structure based on at least the modulated one or more phase differences.
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2.发明申请公开(公告)号：US20190196341A1
公开(公告)日：2019-06-27
申请号：US16328750
申请日：2017-08-18
Applicant: ASML HOLDING N.V. , ASML NETHERLANDS B.V.
Abstract: A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.
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公开(公告)号：US20230017491A1
公开(公告)日：2023-01-19
申请号：US17784566
申请日：2020-12-03
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Igor Matheus Petronalla AARTS , Kaustuve BHATTACHARYYA , Ralph BRINKHOF , Leendert Jan KARSSEMEIJER , Stefan Carolus Jacobus A KEIJ , Haico Victor KOK , Simon Gijsbert Josephus MATHIJSSEN , Henricus Johannes Lambertu MEGENS , Samee Ur REHMAN
Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.
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公开(公告)号：US20170363964A1
公开(公告)日：2017-12-21
申请号：US15694519
申请日：2017-09-01
Applicant: ASML Netherlands B.V.
Inventor： Thibault Simon Mathieu LAURENT , Johannes Henricus Wilhelmus JACOBS , Haico Victor KOK , Yuri Johannes Gabriël VAN DE VIJVER , Johannes Antonius Maria VAN DE WAL , Bastiaan Andreas Wilhelmus Hubertus KNARREN , Robbert-Jan VOOGD , Jan Steven Christiaan WESTERLAKEN , Johannes Hubertus Antonius VAN DE RIJDT , Allard Eelco KOOIKER , Wilhelmina Margareta Jozef HURKENS-MERTENS , Yohann Bruno Yvon TEILLET
IPC: G03F7/20
CPC classification number: G03F7/7085 , G03F7/70341 , G03F7/70666 , G03F7/70858 , G03F7/70891
Abstract: A sensor for use in lithographic apparatus of an immersion type and which, in use, comes into contact with the immersion liquid is arranged so that the thermal resistance of a first heat path from a transducer of the sensor to a temperature conditioning device is less than the thermal resistance of a second heat flow path from the transducer to the immersion liquid. Thus, heat flow is preferentially towards the temperature conditioning device and not the immersion liquid so that temperature-induced disturbance in the immersion liquid is reduced or minimized.
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公开(公告)号：US20250028258A1
公开(公告)日：2025-01-23
申请号：US18684391
申请日：2022-07-25
Applicant: ASML Netherlands B.V.
Inventor： Oleg Viacheslavovich VOZNYI , Haico Victor KOK
Abstract: A system includes a radiation source, an optical system, an optical element, a detection system, and a processor. The radiation source is configured to generate a radiation beam. The optical system is configured to direct the radiation beam toward a target structure and to receive the scattered radiation. The target structure is configured to produce scattered radiation comprising one or more scattered beams. The optical element is configured to control a position of the one or more scattered beams. The detection system is configured to receive a portion of the position-controlled scattered radiation and to generate a detection signal. The processor is configured to determine a property of the target structure based on at least the detection signal.
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Patent Agency Ranking
公开(公告)号：US20160357115A1
公开(公告)日：2016-12-08
申请号：US15240357
申请日：2016-08-18
Applicant: ASML Netherlands B.V.
Inventor： Haico Victor KOK
IPC: G03F7/20
CPC classification number: G03F7/70141 , G03F7/0002 , G03F7/70258 , G03F7/70308 , G03F7/70358 , G03F7/70783
Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.
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公开(公告)号：US20130235360A1
公开(公告)日：2013-09-12
申请号：US13874917
申请日：2013-05-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Haico Victor KOK
IPC: G03F7/20
CPC classification number: G03F7/70141 , G03F7/0002 , G03F7/70258 , G03F7/70308 , G03F7/70358 , G03F7/70783
Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.
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公开(公告)号：US20210072647A1
公开(公告)日：2021-03-11
申请号：US16623647
申请日：2018-05-14
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey DEN BOEF , Patricius Aloysius Jacobus TINNEMANS , Haico Victor KOK , William Peter VAN DRENT , Sebastianus Adrianus GOORDEN
IPC: G03F7/20
Abstract: The invention relates to a sensor (SE) comprising: —a radiation source (LS) to emit radiation (LI) having a coherence length towards a sensor target (GR); and —a polarizing beam splitter (PBS) to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.
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公开(公告)号：US20170219937A1
公开(公告)日：2017-08-03
申请号：US15486077
申请日：2017-04-12
Applicant: ASML Netherlands B.V.
Inventor： Haico Victor KOK , Robbert Jan VOOGD
CPC classification number: G03F7/70775 , G01B11/0675 , G01B11/14 , G03F7/70483 , G03F7/70525 , G03F9/7046 , G03F9/7049 , G03F9/7092
Abstract: A sensor system to measure a physical quantity, the system including a parallel detection arrangement with multiple detectors to allow measurements in parallel at different spatial locations, wherein the multiple detectors share a noise source, wherein the sensor system is configured such that the multiple detectors each output a signal as a function of the physical quantity, and wherein the sensor system is configured such that at least one detector responds differently to noise originating from the shared noise source than the one or more other detectors.
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10.发明申请Lithographic Method to Apply a Pattern to a Substrate and Lithographic Apparatus 有权将图案应用于基板和平版印刷设备的平版印刷方法公开(公告)号：US20140293261A1
公开(公告)日：2014-10-02
申请号：US14301572
申请日：2014-06-11
Applicant: ASML Netherlands B.V.
Inventor： Haico Victor KOK
IPC: G03F7/00
CPC classification number: G03F7/70141 , G03F7/0002 , G03F7/70258 , G03F7/70308 , G03F7/70358 , G03F7/70783
Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.
Abstract translation: 照亮图案形成装置的狭缝形区域以在其横截面上赋予具有图案的辐射束。 投影系统将图案化的辐射束投射到基板的目标部分上。 当辐射束被扫描穿过基板的目标部分时，调整投影系统的配置并将图案应用于目标部分。 调整可以沿着狭缝形状区域的长度或扫描方向上的图像失真影响投影系统的图像放大分量的大小。 该调整被布置为补偿对图案形成装置的变形的图案重叠精度的影响。
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