公开(公告)号：US10691863B2

公开(公告)日：2020-06-23

申请号：US15769539

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen

IPC: G06F30/398 ,  G03F1/70 ,  G03F1/72 ,  G06F111/10

Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.

公开(公告)号：US11170072B2

公开(公告)日：2021-11-09

申请号：US15558186

申请日：2016-03-25

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis Mos ,  Velislava Ignatova ,  Erik Jensen ,  Michael Kubis ,  Hubertus Johannes Gertrudus Simons ,  Peter Ten Berge ,  Erik Johannes Maria Wallerbos ,  Jochem Sebastiaan Wildenberg

IPC: G06F17/18 ,  G06F30/20 ,  H01L21/66 ,  G03F7/20 ,  G03F9/00

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

公开(公告)号：US11442367B2

公开(公告)日：2022-09-13

申请号：US17411107

申请日：2021-08-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Erik Jensen ,  Erik Johannes Maria Wallerbos ,  Cornelis Johannes Rijnierse ,  Bijoy Rajasekharan ,  Roy Werkman ,  Jurgen Johannes Henderikus Maria Schoonus

IPC: G03F7/20

Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

公开(公告)号：US11300887B2

公开(公告)日：2022-04-12

申请号：US16463057

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Victor Emanuel Calado ,  Leon Paul Van Dijk ,  Roy Werkman ,  Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Bijoy Rajasekharan ,  Erik Jensen ,  Adam Jan Urbanczyk

IPC: G03F7/20

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：US11106141B2

公开(公告)日：2021-08-31

申请号：US16495119

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Erik Jensen ,  Erik Johannes Maria Wallerbos ,  Cornelis Johannes Rijnierse ,  Bijoy Rajasekharan ,  Roy Werkman ,  Jurgen Johannes Henderikus Maria Schoonus

IPC: G03F7/20

Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC: G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US20210389684A1

公开(公告)日：2021-12-16

申请号：US17411107

申请日：2021-08-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Erik Jensen ,  Erik Johannes Maria Wallerbos ,  Cornelis Johannes Rijnierse ,  Bijoy Rajasekharan ,  Roy Werkman ,  Jurgen Johannes Henderikus Maria Schoonus

IPC: G03F7/20

Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

公开(公告)号：US11036146B2

公开(公告)日：2021-06-15

申请号：US15769339

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos ,  Peter Ten Berge ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Hakki Ergün Cekli

IPC: G06F30/33 ,  G03F7/20

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.