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    Methods for determining resist deformation
    2.
    发明授权
    Methods for determining resist deformation 有权

    公开(公告)号：US10423076B2

    公开(公告)日：2019-09-24

    申请号：US15553879

    申请日：2016-02-24

    Applicant: ASML Netherlands B.V.

    Inventor： Peng Liu

    IPC: G03F7/20

    Abstract: A method including: obtaining at least a characteristic of deformation of a resist layer in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; and obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.

    Lithography model for three-dimensional patterning device
    3.
    发明授权
    Lithography model for three-dimensional patterning device 有权

    公开(公告)号：US10359704B2

    公开(公告)日：2019-07-23

    申请号：US14766408

    申请日：2014-02-04

    Applicant: ASML Netherlands B.V.

    Inventor： Peng Liu

    IPC: G03F7/20

    Abstract: A computer-implemented method for simulating a scattered radiation field of a patterning device including one or more features, in a lithographic projection apparatus, the method including: determining a scattering function of the patterning device using one or more scattering functions of feature elements of the one or more features; wherein at least one of the one or more features is a three-dimensional feature, or the one or more scattering functions characterize scattering of incident radiation fields at a plurality of incident angles on the feature elements.

    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION
    4.
    发明申请
    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION 有权
    用于光刻模拟的三维掩模模型

    公开(公告)号：US20150135146A1

    公开(公告)日：2015-05-14

    申请号：US14600337

    申请日：2015-01-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

    Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

    Lens heating compensation systems and methods
    5.
    发明授权
    Lens heating compensation systems and methods 有权

    公开(公告)号：US09746784B2

    公开(公告)日：2017-08-29

    申请号：US14064937

    申请日：2013-10-28

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Peng Liu ,  Yu Cao

    IPC: G03B27/52 ,  G03B27/68 ,  G03B27/32 ,  G03F7/20 ,  G06F17/50

    CPC classification number: G03F7/70441 ,  G03F7/70266 ,  G03F7/705 ,  G03F7/70533 ,  G03F7/706 ,  G03F7/70891 ,  G06F17/50

    Abstract: Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.

    Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device
    9.
    发明授权
    Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device 有权

    公开(公告)号：US10996565B2

    公开(公告)日：2021-05-04

    申请号：US16483452

    申请日：2018-02-13

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng Liu ,  Ya Luo ,  Yu Cao ,  Yen-Wen Lu

    IPC: G03F7/20 ,  G06F30/392 ,  G06N3/08 ,  G06F30/39

    Abstract: A method including: obtaining a characteristic of a portion of a design layout; determining a characteristic of M3D of a patterning device including or forming the portion; and training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and whose supervisory signal includes the characteristic of the M3D. Also disclosed is a method including: obtaining a characteristic of a portion of a design layout; obtaining a characteristic of a lithographic process that uses a patterning device including or forming the portion; determining a characteristic of a result of the lithographic process; training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and the characteristic of the lithographic process, and whose supervisory signal includes the characteristic of the result.

    Methods for evaluating resist development
    10.
    发明授权
    Methods for evaluating resist development 有权

    公开(公告)号：US10901322B2

    公开(公告)日：2021-01-26

    申请号：US16605542

    申请日：2018-04-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng Liu

    IPC: G03F7/20 ,  H01L21/027 ,  H01L21/67 ,  G03C7/388

    Abstract: A method, including: obtaining a set of conditions for a resist development model for simulating a resist development process of a resist layer; and performing, by a hardware computer system, a computer simulation of the resist development process using the set of conditions and the resist development model to obtain a characteristic of the development of the resist layer, wherein the computer simulation separately simulates different certain different physical and chemical processes and characteristics of the resist development process.

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