公开(公告)号：US09964853B2

公开(公告)日：2018-05-08

申请号：US14648445

申请日：2013-11-22

Applicant: ASML Netherlands B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03B27/52 ,  G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

公开(公告)号：US20150293458A1

公开(公告)日：2015-10-15

申请号：US14648445

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。

公开(公告)号：US09158194B2

公开(公告)日：2015-10-13

申请号：US13628697

申请日：2012-09-27

Applicant: ASML Netherlands B.V.

Inventor： Armand Eugene Albert Koolen ,  Henricus Petrus Maria Pellemans ,  Maurits Van Der Schaar ,  Peter Clement Paul Vanoppen ,  Michael Kubis

IPC: G01B11/00 ,  G01B11/14 ,  G03B27/32 ,  G03B27/54 ,  G03B27/72 ,  G03B27/74 ,  G03C5/00 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00 ,  G01N21/47 ,  G01B9/04

CPC classification number: G03F1/42 ,  G01B9/04 ,  G01N21/47 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/70 ,  G03F9/7069 ,  G03F9/7088

Abstract: An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.

Abstract translation: 一种方法用于估计和校正覆盖变化作为每个测量的偏移函数。 形成在衬底上的靶包括周期性光栅。 在衬底上用圆形点照射衬底，其尺寸大于每个光栅。 在暗场散射仪中检测由每个光栅散射的辐射，以获得测量信号。 测量信号用于计算叠加。 确定覆盖层与照明点中位置的函数关系（斜率）。 可以计算在诸如照明点中心的标称位置处的覆盖物的估计值，以根据目标在照明点中的位置的函数来校正覆盖物的变化。 这补偿了晶片台移动中的位置误差的影响，以及目标在照明点中产生的非居中位置。

公开(公告)号：US20130100427A1

公开(公告)日：2013-04-25

申请号：US13628697

申请日：2012-09-27

Applicant: ASML Netherlands B.V.

Inventor： Armand Eugene Albert KOOLEN ,  Henricus Petrus Maria Pellemans ,  Maurits Van Der Schaar ,  Peter Clement Paul Vanoppen ,  Michael Kubis

IPC: G03B27/54 ,  G01N21/47

CPC classification number: G03F1/42 ,  G01B9/04 ,  G01N21/47 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/70 ,  G03F9/7069 ,  G03F9/7088

Abstract: An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.

Abstract translation: 一种方法用于估计和校正覆盖变化作为每个测量的偏移函数。 形成在衬底上的靶包括周期性光栅。 在衬底上用圆形点照射衬底，其尺寸大于每个光栅。 在暗场散射仪中检测由每个光栅散射的辐射，以获得测量信号。 测量信号用于计算叠加。 确定覆盖层与照明点中位置的函数关系（斜率）。 可以计算在诸如照明点中心的标称位置处的覆盖物的估计值，以根据目标在照明点中的位置的函数来校正覆盖物的变化。 这补偿了晶片台移动中的位置误差的影响，以及目标在照明点中产生的非居中位置。