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公开(公告)号：US20170255112A1
公开(公告)日：2017-09-07
申请号：US15445612
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard McNAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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Patent Agency Ranking
公开(公告)号：US20210035871A1
公开(公告)日：2021-02-04
申请号：US17072391
申请日：2020-10-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard Mc NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US20240361702A1
公开(公告)日：2024-10-31
申请号：US18621218
申请日：2024-03-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis TSIATMAS , Paul Christiaan Hinnen , Elliott Gerard MC NAMARA , Thomas Theeuwes , Maria Isabel DE LA FUENTE VALENTIN , Mir Homayoun SHAHRJERDY , Arie Jeffrey DEN BOEF , Shu-jin WANG
CPC classification number: G03F7/70633 , G03F7/70625 , G03F7/70683 , G06T7/0006 , G03F7/20 , G06T2207/30148
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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4.发明申请Method of Determining Focus, Inspection Apparatus, Patterning Device, Substrate and Device Manufacturing Method 有权确定焦点的方法，检查装置，图案化装置，基板和装置的制造方法公开(公告)号：US20150338749A1
公开(公告)日：2015-11-26
申请号：US14410496
申请日：2013-06-03
Applicant: ASML Netherlands B.V.
Inventor： Paul Christiaan HINNEN , Shu-jin WANG , Christian Marinus LEEWIS , Kuo-Feng PAO
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F1/42 , G03F1/44 , G03F7/70625 , G03F7/70683
Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.
Abstract translation: 确定光刻设备的焦点的方法具有以下步骤。 使用光刻工艺在衬底上产生第一和第二结构，第一结构具有特征，其具有取决于焦点和曝光扰动（例如剂量或像差）的不对称性的轮廓。 第二结构具有这样的特征，其具有与第一结构不同的焦点敏感性，并且与第一结构不同的曝光扰动敏感度。 散射仪信号用于确定用于产生第一结构的聚焦值。 这可以使用第二散射仪信号和/或在光刻处理中使用的记录的曝光扰动设置来完成，以使用第一散射仪信号来选择用于确定聚焦值的校准曲线，或者通过使用具有与 第一和第二散射仪信号。
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5.发明申请公开(公告)号：US20190250094A1
公开(公告)日：2019-08-15
申请号：US16268564
申请日：2019-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh PANDEY , Zili ZHOU , Gerbrand VAN DER ZOUW , Arie Jeffrey DEN BOEF , Markus Gerardus Martinus Maria VAN KRAAIJ , Armand Eugene Albert KOOLEN , Hugo Augustinus Joseph CRAMER , Paul Christiaan HINNEN , Martinus Hubertus Maria VAN WEERT , Anagnostis TSIATMAS , Shu-jin WANG , Bastiaan Onne FAGGINGER AUER , Alok VERMA
CPC classification number: G01N21/21 , G01N21/8806 , G01N2021/8848 , G03F7/70191 , G03F7/70616 , G03F7/70625 , G03F7/70633
Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.
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公开(公告)号：US20170153554A1
公开(公告)日：2017-06-01
申请号：US15429952
申请日：2017-02-10
Applicant: ASML Netherlands B.V.
Inventor： Paul Christiaan HINNEN , Shu-jin WANG , Christian Marinus LEEWIS , Kuo-Feng PAO
CPC classification number: G03F7/70641 , G03F1/42 , G03F1/44 , G03F7/70625 , G03F7/70683
Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.
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