公开(公告)号：US20150295006A1

公开(公告)日：2015-10-15

申请号：US14554072

申请日：2014-11-26

Applicant: AU OPTRONICS CORP.

Inventor： Ching-Wen Chen ,  An-Thung Cho ,  Jiun-Jye Chang ,  Chun Chang

IPC: H01L27/146 ,  H01L29/66 ,  H01L31/0224 ,  H01L31/18 ,  H01L29/786 ,  H01L31/105

CPC classification number: H01L29/66969 ,  H01L29/7869 ,  H01L31/022466 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/1884

Abstract: A light sensing device includes a substrate, a control unit and a light sensing unit. The control unit and the light sensing unit are disposed on the substrate. The control unit includes a gate electrode, a gate insulation layer, an oxide semiconductor pattern, a source electrode and a drain electrode. The gate insulation layer is disposed on the gate electrode, and the oxide semiconductor pattern is disposed on the gate insulation layer. The light sensing unit includes a bottom electrode, a light sensing diode and a top electrode. The light sensing diode is disposed on the bottom electrode, and the top electrode is disposed on the light sensing diode. The gate insulation layer partially covers the top electrode, and the gate insulation layer has a first opening partially exposing the bottom electrode. The drain electrode is electrically connected to the bottom electrode via the first opening.

Abstract translation: 光感测装置包括基板，控制单元和光感测单元。 控制单元和光感测单元设置在基板上。 控制单元包括栅电极，栅极绝缘层，氧化物半导体图案，源电极和漏电极。 栅极绝缘层设置在栅电极上，并且氧化物半导体图案设置在栅极绝缘层上。 光感测单元包括底部电极，感光二极管和顶部电极。 光检测二极管设置在底电极上，顶电极设置在感光二极管上。 栅极绝缘层部分地覆盖顶部电极，并且栅极绝缘层具有部分地暴露底部电极的第一开口。 漏电极经由第一开口电连接到底电极。

公开(公告)号：US09122352B2

公开(公告)日：2015-09-01

申请号：US14535334

申请日：2014-11-07

Applicant: AU Optronics Corp.

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: G06F3/042 ,  H01L31/028 ,  G06F3/041 ,  H01L31/18 ,  H01L31/20 ,  H01L27/146

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  G06F2203/04109 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/202

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract translation: 一种形成光传感器的方法包括以下步骤。 提供基板，并且在基板上形成第一电极。 第一富硅介电层形成在用于感测红外线的第一电极上，其中第一富硅介电层包括富硅氧化物层，富硅氮化物层或富硅氧氮化物层。 在第一富硅电介质层上形成第二富硅介电层，用于感测可见光束，其中第二富硅介电层包括富硅氧化物层，富硅氮化物层或硅 - 富氮氧化物层。 第二电极形成在第二富硅电介质层上。

公开(公告)号：US20150062088A1

公开(公告)日：2015-03-05

申请号：US14535334

申请日：2014-11-07

Applicant: AU Optronics Corp.

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Hung-Wei Tseng ,  Cheng-Chiu Pai ,  Yu-Hsuan Li ,  Chun-Hsiun Chen ,  Wei-Ming Huang

IPC: G06F3/042 ,  G06F3/041 ,  H01L31/028 ,  H01L31/18 ,  H01L31/20

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04103 ,  G06F2203/04109 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/028 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/202

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract translation: 一种形成光传感器的方法包括以下步骤。 提供基板，并且在基板上形成第一电极。 第一富硅介电层形成在用于感测红外线的第一电极上，其中第一富硅介电层包括富硅氧化物层，富硅氮化物层或富硅氧氮化物层。 在第一富硅电介质层上形成第二富硅介电层，用于感测可见光束，其中第二富硅介电层包括富硅氧化物层，富硅氮化物层或硅 - 富氮氧化物层。 第二电极形成在第二富硅电介质层上。

公开(公告)号：US20140092068A1

公开(公告)日：2014-04-03

申请号：US13782224

申请日：2013-03-01

Applicant: AU OPTRONICS CORP.

Inventor： Zao-Shi Zheng ,  Chun Chang ,  Po-Yu Kuo ,  An-Thung Cho ,  Jiun-Jye Chang

IPC: G06F3/03

CPC classification number: G06F3/0304 ,  G06F3/0416 ,  G06F3/0421 ,  G06F3/0425 ,  G06K9/0004 ,  H04N1/195

Abstract: An optical touch panel includes a light source unit and a processing unit, wherein the processing unit is for executing a brightness control method. The brightness control method includes steps below. The light source unit emits at a first intensity in a touch control mode. Responding to a switching condition, the touch panel is switched into a scan mode, and the light source unit emits at a second intensity in the scan mode.

Abstract translation: 光学触摸面板包括光源单元和处理单元，其中处理单元用于执行亮度控制方法。 亮度控制方法包括以下步骤。 光源单元以触摸控制模式的第一强度发射。 响应切换条件，触摸面板切换到扫描模式，并且光源单元在扫描模式下以第二强度发射。

公开(公告)号：US20130169596A1

公开(公告)日：2013-07-04

申请号：US13711796

申请日：2012-12-12

Applicant: AU OPTRONICS CORP.

Inventor： Guo-Zhen Wang ,  Shu-Yi Huang ,  Yi-Pai Huang ,  An-Thung Cho ,  Jiun-Jye Chang

IPC: G06F3/042

CPC classification number: G06F3/0425 ,  G06F3/0325 ,  G06F3/0386

Abstract: A three-dimensional interaction display includes a display panel having a plurality of light sensing devices, a first light emitting device, a second light emitting device, and a processing circuit. The first light emitting device includes a first light emitting surface including a first pattern, and the first pattern includes a first shape boundary having a first total length. The second light emitting device includes a second light emitting surface including a second pattern, and the second pattern includes a second shape boundary having a second total length. The processing circuit is electrically connected to the plurality of light sensing devices for processing an image obtained by the light sensing devices, calculating the total length of the shape boundary of each of the patterns shown in the obtained image, and determining the corresponding light emitting device according to the total length of the shape boundary of each of the patterns.

Abstract translation: 三维交互显示器包括具有多个感光装置的显示面板，第一发光装置，第二发光装置和处理电路。 第一发光器件包括包括第一图案的第一发光表面，并且第一图案包括具有第一总长度的第一形状边界。 第二发光器件包括包括第二图案的第二发光表面，并且第二图案包括具有第二总长度的第二形状边界。 处理电路电连接到多个光感测装置，用于处理由感光装置获得的图像，计算所获得的图像中所示的每个图案的形状边界的总长度，并且确定相应的发光装置 根据每个图案的形状边界的总长度。

公开(公告)号：US09997636B2

公开(公告)日：2018-06-12

申请号：US15683031

申请日：2017-08-22

Applicant: AU OPTRONICS CORP.

Inventor： Ching-Wen Chen ,  An-Thung Cho

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/027 ,  H01L31/09 ,  H01L31/18 ,  H01L29/66

CPC classification number: H01L29/78651 ,  H01L21/0274 ,  H01L27/124 ,  H01L27/3227 ,  H01L29/66765 ,  H01L31/09 ,  H01L31/18

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

公开(公告)号：US20170352764A1

公开(公告)日：2017-12-07

申请号：US15683031

申请日：2017-08-22

Applicant: AU OPTRONICS CORP.

Inventor： Ching-Wen Chen ,  An-Thung Cho

IPC: H01L29/786 ,  H01L31/09 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12 ,  H01L31/18 ,  H01L21/027

CPC classification number: H01L29/78651 ,  H01L21/0274 ,  H01L27/124 ,  H01L27/3227 ,  H01L29/66765 ,  H01L31/09 ,  H01L31/18

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

公开(公告)号：US08970555B2

公开(公告)日：2015-03-03

申请号：US13782224

申请日：2013-03-01

Applicant: AU Optronics Corp.

Inventor： Zao-Shi Zheng ,  Chun Chang ,  Po-Yu Kuo ,  An-Thung Cho ,  Jiun-Jye Chang

IPC: G06F3/042 ,  G06F3/03

CPC classification number: G06F3/0304 ,  G06F3/0416 ,  G06F3/0421 ,  G06F3/0425 ,  G06K9/0004 ,  H04N1/195

Abstract: An optical touch panel includes a light source unit and a processing unit, wherein the processing unit is for executing a brightness control method. The brightness control method includes steps below. The light source unit emits at a first intensity in a touch control mode. Responding to a switching condition, the touch panel is switched into a scan mode, and the light source unit emits at a second intensity in the scan mode.

Abstract translation: 光学触摸面板包括光源单元和处理单元，其中处理单元用于执行亮度控制方法。 亮度控制方法包括以下步骤。 光源单元以触摸控制模式的第一强度发射。 响应切换条件，触摸面板切换到扫描模式，并且光源单元在扫描模式下以第二强度发射。