利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

644 条记录 (耗时 0.037 秒)

    Metal mask etching of silicon
    1.
    发明授权
    Metal mask etching of silicon 失效
    金属掩模蚀刻硅

    公开(公告)号：US06491835B1

    公开(公告)日：2002-12-10

    申请号：US09467560

    申请日：1999-12-20

    申请人： Ajay Kumar ,  Anisul Khan ,  Wei Liu ,  John Chao ,  Jeff Chinn

    发明人： Ajay Kumar ,  Anisul Khan ,  Wei Liu ,  John Chao ,  Jeff Chinn

    IPC分类号： H01L2100

    CPC分类号： H01L21/3081

    摘要： The present disclosure provides a method for etching trenches, contact vias, or similar features to a depth of 100 &mgr;m and greater while permitting control of the etch profile (the shape of the sidewalls surrounding the etched opening). The method requires the use of a metal-comprising masking material in combination with a fluorine-comprising plasma etchant. The byproduct produced by a combination of the metal with reactive fluorine species must be essentially non-volatile under etch process conditions, and sufficiently non-corrosive to features on the substrate being etched, that the substrate remains unharmed by the etch process. Although aluminum is a preferred metal for the metal-comprising mask, other metals can be used for the masking material, so long as they produce an essentially non-volatile, non-corrosive etch byproduct under etch process conditions. By way of example, and not by way of limitation, metallic materials recommended for the mask include aluminum, cadmium, copper, chromium, gallium, indium, iron, magnesium, manganese, nickel, and combinations thereof. In particular, aluminum in combination with copper or magnesium is particularly useful, where the copper or magnesium content is less than about 8% by weight, and other constituents total less than about 2% by weight. The plasma feed gas includes at least one fluorine-containing compound such as nitrogen trifluoride (NF3), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6), by way of example and not by way of limitation. Oxygen (O2), or an oxygen-comprising compound, or hydrogen bromide (HBr), or a combination thereof may be added to the plasma feed gases to help provide a protective layer over etched sidewalls, assisting in profile control of the etched feature.

    摘要翻译： 本公开提供了一种用于将沟槽，接触通孔或类似特征蚀刻至100μm和更大深度的方法，同时允许控制蚀刻轮廓（围绕蚀刻开口的侧壁的形状）。 该方法需要使用含金属的掩模材料与含氟等离子体蚀刻剂的组合。 由金属与反应性氟物质的组合产生的副产物在蚀刻工艺条件下必须基本上是非挥发性的，并且对被蚀刻的衬底上的特征具有足够的非腐蚀性，衬底保持不受蚀刻过程的伤害。 虽然铝是用于含金属掩模的优选金属，但是其它金属可以用于掩模材料，只要它们在蚀刻工艺条件下产生基本上非挥发性，非腐蚀性的蚀刻副产物即可。 作为示例而非限制，推荐用于掩模的金属材料包括铝，镉，铜，铬，镓，铟，铁，镁，锰，镍及其组合。 特别地，与铜或镁组合的铝是特别有用的，其中铜或镁含量小于约8重量％，其它组分总计小于约2重量％。 作为示例而非限制，等离子体进料气体包括至少一种含氟化合物如三氟化氮（NF 3），四氟化碳（CF 4）和六氟化硫（SF 6）。 可以将氧（O 2）或含氧化合物或溴化氢（HBr）或其组合添加到等离子体进料气体中以帮助在蚀刻的侧壁上提供保护层，有助于蚀刻特征的轮廓控制。

    Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosion
    2.
    发明授权
    Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosion 失效
    使用含硅前体进行硅沟槽蚀刻，以减少或避免掩模侵蚀

    公开(公告)号：US06380095B1

    公开(公告)日：2002-04-30

    申请号：US09716074

    申请日：2000-11-16

    申请人： Wei Liu ,  Yiqiong Wang ,  Maocheng Li ,  Anisul Khan ,  Shaoher Pan ,  Dragan Podlesnik

    发明人： Wei Liu ,  Yiqiong Wang ,  Maocheng Li ,  Anisul Khan ,  Shaoher Pan ,  Dragan Podlesnik

    IPC分类号： H01L21302

    CPC分类号： H01L21/3065

    摘要： The present invention pertains to an etch chemistry and method useful for the etching of silicon surfaces. The method is particularly useful in the deep trench etching of silicon where profile control is important. In the case of deep trench etching, at least a portion of the substrate toward the bottom of the trench is etched using a combination of reactive gases including a fluorine-containing compound which does not contain silicon (FC); a silicon-containing compound (SC) which does not contain fluorine; and oxygen (O2).

    摘要翻译： 本发明涉及用于蚀刻硅表面的蚀刻化学和方法。 该方法在硅的深沟槽蚀刻中特别有用，其中轮廓控制是重要的。 在深沟槽蚀刻的情况下，使用包含不含硅（FC）的含氟化合物的反应性气体的组合来蚀刻朝向沟槽底部的至少一部分衬底; 不含氟的含硅化合物（SC）; 和氧气（O2）。

    Method for etching a trench having rounded top and bottom corners in a silicon substrate
    3.
    发明授权
    Method for etching a trench having rounded top and bottom corners in a silicon substrate 失效
    蚀刻在硅衬底中具有圆形顶角和底角的沟槽的方法

    公开(公告)号：US06235643B1

    公开(公告)日：2001-05-22

    申请号：US09371966

    申请日：1999-08-10

    申请人： David Mui ,  Dragan Podlesnik ,  Wei Liu ,  Gene Lee ,  Nam-Hun Kim ,  Jeff Chinn

    发明人： David Mui ,  Dragan Podlesnik ,  Wei Liu ,  Gene Lee ,  Nam-Hun Kim ,  Jeff Chinn

    IPC分类号： H01L2100

    CPC分类号： H01L21/76232 ,  H01L21/3065 ,  H01L21/3081

    摘要： The present invention provides straight forward methods for plasma etching a trench having rounded top corners, or rounded bottom corners, or both in a silicon substrate. A first method for creating a rounded top corner on the etched silicon trench comprises etching both an overlying silicon oxide layer and an upper portion of the silicon substrate during a “break-through” step which immediately precedes the step in which the silicon trench is etched. The plasma feed gas for the break-through step comprises carbon and fluorine. In this method, the photoresist layer used to pattern the etch stack is preferably not removed prior to the break-through etching step. Subsequent to the break-through step, a trench is etched to a desired depth in the silicon substrate using a different plasma feed gas composition. A second method for creating a rounded top corner on the etched silicon trench comprises formation of a built-up extension on the sidewall of an overlying patterned silicon nitride hard mask during etch (break-through) of a silicon oxide adhesion layer which lies between the hard mask and a silicone substrate. The built-up extension upon the silicon nitride sidewall acts as a sacrificial masking material during etch of the silicon trench, delaying etching of the silicon at the outer edges of the top of the trench. This permits completion of trench etching with delayed etching of the top corner of the trench and provides a more gentle rounding (increased radius) at the top corners of the trench. During the etching of the silicon trench to its final dimensions, it is desirable to round the bottom corners of the finished silicon trench. We have discovered that a more rounded bottom trench corner is obtained using a two-step silicon etch process where the second step of the process is carried out at a higher process chamber pressure than the first step.

    摘要翻译： 本发明提供了用于在硅衬底中等离子体蚀刻具有圆形顶角或圆形底角或两者的沟槽的直接方法。 用于在蚀刻的硅沟槽上形成圆角顶角的第一种方法包括：在“穿透”步骤​​期间蚀刻覆盖硅氧化物层和硅衬底的上部两者之间，其中硅裂纹之前的步骤 。 用于穿透步骤的等离子体进料气体包括碳和氟。 在该方法中，用于图案化蚀刻叠层的光致抗蚀剂层优选在穿透蚀刻步骤之前不被去除。 在突破步骤之后，使用不同的等离子体进料气体组合物将沟槽蚀刻到硅衬底中的所需深度。 用于在蚀刻的硅沟槽上产生圆角顶角的第二种方法包括在位于第二层之间的氧化硅粘合层的蚀刻（穿透）期间在覆盖的图案化氮化硅硬掩模的侧壁上形成积层延伸。 硬面罩和硅胶基材。 在硅氮化物侧壁上的累积延伸在硅沟槽的蚀刻期间用作牺牲掩模材料，延迟在沟槽顶部的外边缘处的硅的蚀刻。 这允许通过延迟蚀刻沟槽的顶角完成沟槽蚀刻，并且在沟槽的顶角提供更温和的圆化（增加的半径）。 在将硅沟槽蚀刻到其最终尺寸期间，期望圆形完成的硅沟槽的底角。 我们已经发现，使用两步硅蚀刻工艺获得更圆的底部沟槽角，其中该工艺的第二步骤在比第一步高的处理室压力下进行。

    Apparatus of projector headlights
    5.
    发明授权
    Apparatus of projector headlights 有权

    公开(公告)号：US11686448B1

    公开(公告)日：2023-06-27

    申请号：US17699103

    申请日：2022-03-19

    申请人： Wei Liu

    发明人： Wei Liu

    IPC分类号： B60Q1/00 ,  F21S41/683 ,  F21S41/32 ,  F21S41/43 ,  F21S41/25 ,  F21W102/135

    CPC分类号： F21S41/683 ,  F21S41/25 ,  F21S41/32 ,  F21S41/43 ,  F21W2102/135

    摘要： This invention is a projector headlight that, while offering dual beam patterns, boasts a 100% utilization of the light emitted from a light source by one of the following methods: (1) employing a reflective cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern, (2) using reversible cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern with no moving part involved, (3) utilizing a selective light-filter cutoff means to selectively reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern without making use of any moving part, (4) using a low-beam light-emitting subassembly and a high-beam light-emitting subassembly that are separated by partition means to achieve dual beam patterns with no moving part, or (5) adopting a low-beam light-emitting subassembly in low-beam pattern and a high-beam light-emitting subassembly in high-beam pattern without any moving part.

    Work units for content processing
    10.
    发明授权
    Work units for content processing 有权
    内容处理单位

    公开(公告)号：US09152932B2

    公开(公告)日：2015-10-06

    申请号：US12970994

    申请日：2010-12-17

    申请人： Mohammad Reza Shafiee ,  Hongfang Li ,  Wei Liu ,  Anurag Gupta ,  Ashutosh K. Sureka ,  Satya S. Raju

    发明人： Mohammad Reza Shafiee ,  Hongfang Li ,  Wei Liu ,  Anurag Gupta ,  Ashutosh K. Sureka ,  Satya S. Raju

    IPC分类号： G06F17/30 ,  G06Q10/06

    CPC分类号： G06Q10/06

    摘要： A system may create work units, each work unit including at least one of an input port or output port, each work unit configured to modify data that is received via the input port. In addition, the system may compose a workflow by connecting an output port of a first of the work units to an input port of a second of the work units, receive a work order, select the workflow in response to the work order, decompose the workflow into constituent work units, instantiate tasks that correspond to the constituent work units, and execute a work unit process for each of the tasks.

    摘要翻译： 系统可以创建工作单元，每个工作单元包括输入端口或输出端口中的至少一个，每个工作单元被配置为修改经由输入端口接收的数据。 此外，系统可以通过将第一工作单元的输出端口连接到第二工作单元的输入端口来组合工作流程，接收工作单，响应于工作顺序选择工作流程，分解工作单元 工作流组成工作单元，实例化与组成单位对应的任务，并执行每个任务的工作单元处理。