公开(公告)号：US6150697A

公开(公告)日：2000-11-21

申请号：US301562

申请日：1999-04-29

申请人： Akihiko Teshigahara ,  Akiyoshi Asai ,  Kunihiro Onoda ,  Hiroyasu Itou ,  Ryuichirou Abe ,  Toshio Sakakibara

发明人： Akihiko Teshigahara ,  Akiyoshi Asai ,  Kunihiro Onoda ,  Hiroyasu Itou ,  Ryuichirou Abe ,  Toshio Sakakibara

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  H01L27/01

CPC分类号： H01L29/66681 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0696 ,  H01L29/66674 ,  H01L29/7824 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76286 ,  H01L29/402

摘要： An island region surrounded by a trench is provided in an SOI substrate. The island region is further surrounded by a buffer region with a buffer region contact layer. In the island region, a source region is annularly provided around a drain region, and source and drain electrodes are respectively provided on the source and the drain regions. An annular auxiliary electrode is formed with the source electrode to extend over the trench. Accordingly, a voltage applied to the source electrode can be applied to the auxiliary electrode, so that electric field concentration between the buffer region and the source electrode is relaxed.

摘要翻译： 在SOI衬底中设置由沟槽包围的岛状区域。 岛区还被具有缓冲区接触层的缓冲区包围。 在岛状区域，源极区域围绕漏极区域环状设置，源极和漏极电极分别设置在源极和漏极区域上。 形成环形辅助电极，源电极在沟槽上延伸。 因此，施加到源电极的电压可以施加到辅助电极，使得缓冲区域和源电极之间的电场浓度被放宽。

公开(公告)号：US06191007B1

公开(公告)日：2001-02-20

申请号：US09066971

申请日：1998-04-28

申请人： Masaki Matsui ,  Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Kunihiro Onoda ,  Akiyoshi Asai ,  Takanari Sasaya ,  Takeshi Enya ,  Jun Sakakibara

发明人： Masaki Matsui ,  Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Kunihiro Onoda ,  Akiyoshi Asai ,  Takanari Sasaya ,  Takeshi Enya ,  Jun Sakakibara

IPC分类号： H01L21331

CPC分类号： H01L21/84 ,  H01L21/02667 ,  H01L21/2022 ,  H01L21/76243 ,  H01L21/76254 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76283 ,  H01L2221/68363

摘要： Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.

摘要翻译： 制造半导体衬底的方法，其中半导体器件用于形成半导体器件的半导体层形成在支撑衬底上，绝缘膜介于其之间，在形成掩埋图案结构的衬底上形成半导体层是可能的 大大增加了半导体层的膜厚均匀性和膜厚可控性，特别是当半导体层被形成为极薄膜时。 结果，可以实现半导体衬底的改进的质量和特性，并且可以将这种半导体衬底部署到各种用途上。

公开(公告)号：US06495294B1

公开(公告)日：2002-12-17

申请号：US09696951

申请日：2000-10-27

申请人： Shoichi Yamauchi ,  Yasushi Urakami ,  Kunihiro Onoda ,  Toshio Sakakibara ,  Yoshinori Otsuka

发明人： Shoichi Yamauchi ,  Yasushi Urakami ,  Kunihiro Onoda ,  Toshio Sakakibara ,  Yoshinori Otsuka

IPC分类号： H01L2176

CPC分类号： H01L29/0634 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02661 ,  H01L21/743 ,  H01L21/761 ,  H01L29/045

摘要： A trench is formed in a silicon substrate, and an epitaxial film is formed on the substrate and in the trench. After a part of the epitaxial film formed around an opening portion of the trench is etched, another epitaxial film is formed on the substrate and in the trench. Accordingly, the trench can be filled with the epitaxial films completely. Then, the surface of the substrate is flattened.

摘要翻译： 在硅衬底中形成沟槽，并且在衬底和沟槽中形成外延膜。 在蚀刻形成在沟槽的开口部分周围的外延膜的一部分之后，在衬底和沟槽中形成另外的外延膜。 因此，沟槽可以完全被外延膜填充。 然后，使基板的表面变平。

公开(公告)号：US07494594B2

公开(公告)日：2009-02-24

申请号：US11633452

申请日：2006-12-05

申请人： Kunihiro Onoda ,  Hideaki Nishikawa ,  Tetsuo Yoshioka

发明人： Kunihiro Onoda ,  Hideaki Nishikawa ,  Tetsuo Yoshioka

IPC分类号： C23F1/00

CPC分类号： H02N1/008 ,  H02N1/006

摘要： An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon layer. A potential difference is generated between a movable side comb-tooth electrode of the movable structure and a fixed side comb-tooth electrode disposed to face the movable side comb-tooth electrode to swing the movable structure. The fixed side comb-tooth electrode is formed in the inside of a through hole bored through the laminate substrate.

摘要翻译： 用于增加可移动结构的摆动（偏转角）的静电致动器包括其中通过掩埋绝缘膜在硅衬底上形成薄膜硅层的层叠衬底和由薄膜硅层构成的扭力梁可移动结构 。 在可移动结构的可动侧梳齿电极和设置成面对可动侧梳齿电极的摆动可移动结构的固定侧梳齿电极之间产生电位差。 固定侧梳齿电极形成在穿过层叠基板的通孔的内侧。

公开(公告)号：US06534380B1

公开(公告)日：2003-03-18

申请号：US09116956

申请日：1998-07-17

申请人： Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Masaki Matsui ,  Kunihiro Onoda ,  Tadao Ooka ,  Akitoshi Yamanaka ,  Toshifumi Izumi

发明人： Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Masaki Matsui ,  Kunihiro Onoda ,  Tadao Ooka ,  Akitoshi Yamanaka ,  Toshifumi Izumi

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  Y10S438/96

摘要： Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatness of the contamination protective film is degraded during the ion implanting step or even when contaminants remain in a segregated state in the vicinity of the surface of the contamination protective film, the state of the bonding between the semiconductor substrate and the base substrate after the bonding step can be made uniform over the entire area of the bonding. As a result, a high-quality semiconductor substrate can be manufactured at low cost.

摘要翻译： 在半导体基板和基底基板彼此直接接合之前，在保护膜去除步骤中，去除了在离子注入步骤期间形成在半导体衬底上以防止其污染的污染保护膜。 因此，即使当在离子注入步骤期间污染保护膜的平坦度劣化时，或者甚至当污染保护膜表面附近的污染物保持分离状态时，半导体衬底和基底之间的接合状态 接合步骤之后的基板可以在结合的整个区域上均匀。 结果，可以以低成本制造高质量的半导体衬底。

公开(公告)号：US20070075033A1

公开(公告)日：2007-04-05

申请号：US11633452

申请日：2006-12-05

申请人： Kunihiro Onoda ,  Hideaki Nishikawa ,  Tetsuo Yoshioka

发明人： Kunihiro Onoda ,  Hideaki Nishikawa ,  Tetsuo Yoshioka

IPC分类号： C23F1/00

CPC分类号： H02N1/008 ,  H02N1/006

摘要： An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon layer. A potential difference is generated between a movable side comb-tooth electrode of the movable structure and a fixed side comb-tooth electrode disposed to face the movable side comb-tooth electrode to swing the movable structure. The fixed side comb-tooth electrode is formed in the inside of a through hole bored through the laminate substrate.

摘要翻译： 用于增加可移动结构的摆动（偏转角）的静电致动器包括其中通过掩埋绝缘膜在硅衬底上形成薄膜硅层的层叠衬底和由薄膜硅层构成的扭力梁可移动结构 。 在可移动结构的可动侧梳齿电极和设置成面对可动侧梳齿电极的摆动可移动结构的固定侧梳齿电极之间产生电位差。 固定侧梳齿电极形成在通过层压基板钻孔的通孔的内部。

公开(公告)号：US06251754B1

公开(公告)日：2001-06-26

申请号：US09074384

申请日：1998-05-08

申请人： Hisayoshi Ohshima ,  Masaki Matsui ,  Kunihiro Onoda ,  Shoichi Yamauchi

发明人： Hisayoshi Ohshima ,  Masaki Matsui ,  Kunihiro Onoda ,  Shoichi Yamauchi

IPC分类号： H01L2120

CPC分类号： H01L21/76254

摘要： The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply while reducing impurity contamination of the semiconductor layer to a minimum. One of these methods includes a defective layer forming step of carrying out ion implantation to a predetermined depth from the surface of a base substrate to partition off a monocrystalline thin film layer at the surface of the base substrate by a defective layer formed by implanted ions, a semiconductor film forming step of forming a monocrystalline semiconductor film of a predetermined thickness on the monocrystalline thin film layer, a laminating step of laminating the base substrate by the surface of the monocrystalline semiconductor film to the supporting substrate, and a detaching step of detaching the base substrate laminated to the supporting substrate at the defective layer.

摘要翻译： 本发明提供了许多半导体衬底制造方法，在制造具有在支撑衬底上具有绝缘状态的半导体层的半导体衬底的情况下，可以以简单的工艺获得厚半导体层并且在降低杂质污染的同时廉价 的半导体层。 这些方法之一包括从基底表面进行离子注入到预定深度的缺陷层形成步骤，以通过由注入离子形成的缺陷层在基底基板的表面分隔单晶薄膜层， 在单晶薄膜层上形成预定厚度的单晶半导体膜的半导体膜形成步骤，通过单晶半导体膜的表面将基底基板层压到支撑基板上的层压步骤，以及将基板 基底基板层叠到不良层的支撑基板。