公开(公告)号：US20140179108A1

公开(公告)日：2014-06-26

申请号：US13784591

申请日：2013-03-04

申请人： Applied Materials, Inc.

发明人： Dung Huu Le ,  Graeme Jamieson Scott ,  Jivko Dinev ,  Madhava Rao Yalamanchili ,  Khalid Mohiuddin Sirajuddin ,  Puneet Bajaj ,  Saravjeet Singh

IPC分类号： H01L21/3065 ,  H01L21/67

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32623 ,  H01L21/67069

摘要： Embodiments of the invention generally relate to an apparatus and method for plasma etching. In one embodiment, the apparatus includes a process ring with an annular step away from an inner wall of the ring and is disposed on a substrate support in a plasma process chamber. A gap is formed between the process ring and a substrate placed on the substrate support. The annular step has an inside surface having a height ranging from about 3 mm to about 6 mm. During operation, an edge-exclusion gas is introduced to flow through the gap and along the inside surface, so the plasma is blocked from entering the space near the edge of the substrate.

摘要翻译： 本发明的实施例一般涉及用于等离子体蚀刻的装置和方法。 在一个实施例中，该设备包括具有远离环的内壁的环形台阶并且设置在等离子体处理室中的基板支撑件上的处理环。 在工艺环和放置在衬底支架上的衬底之间形成间隙。 环形台阶具有高度范围为约3mm至约6mm的内表面。 在操作期间，引入边缘排除气体流过间隙并沿着内表面，从而阻止等离子体进入基板边缘附近的空间。

公开(公告)号：USD969980S1

公开(公告)日：2022-11-15

申请号：US29755418

申请日：2020-10-20

申请人： Applied Materials, Inc.

设计人： Alexander N. Lerner ,  Graeme Jamieson Scott ,  Prashanth Kothnur

公开(公告)号：US11721566B2

公开(公告)日：2023-08-08

申请号：US17374189

申请日：2021-07-13

申请人： Applied Materials, Inc.

发明人： Xiaozhou Che ,  Graeme Jamieson Scott ,  Richard Gustav Hagborg ,  Alan H. Ouye ,  Nelson A. Yee

IPC分类号： H01L21/67 ,  C23C14/54 ,  C23C16/455 ,  G01B17/02 ,  H01L21/66 ,  C23C14/04 ,  C23C14/12

CPC分类号： H01L21/67253 ,  C23C14/546 ,  C23C16/45565 ,  G01B17/025 ,  H01L21/6719 ,  H01L22/12 ,  C23C14/042 ,  C23C14/12

摘要： Methods and systems for monitoring film thickness using a sensor assembly include a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.

公开(公告)号：USD967351S1

公开(公告)日：2022-10-18

申请号：US29755419

申请日：2020-10-20

申请人： Applied Materials, Inc.

设计人： Alexander N. Lerner ,  Graeme Jamieson Scott ,  Prashanth Kothnur

公开(公告)号：US10903055B2

公开(公告)日：2021-01-26

申请号：US14690121

申请日：2015-04-17

申请人： Applied Materials, Inc.

发明人： Rohit Mishra ,  Graeme Jamieson Scott ,  Khalid Mohiuddin Sirajuddin ,  Sheshraj L. Yulshibagwale ,  Sriskantharajah Thirunavukarasu

IPC分类号： H01J37/32 ,  H01L21/687

摘要： Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.