公开(公告)号：US11257693B2

公开(公告)日：2022-02-22

申请号：US14593873

申请日：2015-01-09

Applicant: Applied Materials, Inc.

Inventor： Son Nguyen ,  Dmitry Lubomirsky ,  Chungman Kim ,  Kirby H. Floyd

IPC: H01L21/00 ,  H01L21/67

Abstract: A semiconductor processing system may include a substrate pedestal. The system may also include at least one fluid channel having a delivery portion configured to deliver a temperature controlled fluid to the substrate pedestal, and having a return portion configured to return the temperature controlled fluid from the substrate pedestal. The system may also include a heater coupled with the delivery portion of the at least one fluid channel. The system may also include a temperature measurement device coupled with the return portion of the at least one fluid channel, and the temperature measurement device may be communicatively coupled with the heater.

公开(公告)号：US09922819B2

公开(公告)日：2018-03-20

申请号：US15435189

申请日：2017-02-16

Applicant: Applied Materials, Inc.

Inventor： Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan ,  Robert Kim ,  Dale R. Du Bois ,  Kirby H. Floyd ,  Amit Kumar Bansal ,  Tuan Anh Nguyen

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

公开(公告)号：US20160204009A1

公开(公告)日：2016-07-14

申请号：US14593873

申请日：2015-01-09

Applicant: Applied Materials, Inc.

Inventor： Son Nguyen ,  Dmitry Lubomirsky ,  Chungman Kim ,  Kirby H. Floyd

IPC: H01L21/67

CPC classification number: H01L21/67109 ,  H01L21/67248

Abstract: A semiconductor processing system may include a substrate pedestal. The system may also include at least one fluid channel having a delivery portion configured to deliver a temperature controlled fluid to the substrate pedestal, and having a return portion configured to return the temperature controlled fluid from the substrate pedestal. The system may also include a heater coupled with the delivery portion of the at least one fluid channel. The system may also include a temperature measurement device coupled with the return portion of the at least one fluid channel, and the temperature measurement device may be communicatively coupled with the heater.

Abstract translation: 半导体处理系统可以包括衬底基座。 该系统还可以包括至少一个流体通道，该流体通道具有配置成将温度受控流体输送到基板基座的输送部分，并且具有被配置为使得温度受控流体从基板基座返回的返回部分。 该系统还可以包括与至少一个流体通道的输送部分联接的加热器。 该系统还可以包括与至少一个流体通道的返回部分耦合的温度测量装置，并且温度测量装置可以与加热器通信地耦合。

公开(公告)号：US11302520B2

公开(公告)日：2022-04-12

申请号：US14747367

申请日：2015-06-23

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Dmitry Lubomirsky ,  Kirby H. Floyd ,  Son T. Nguyen ,  David Palagashvili ,  Alexander Tam ,  Shaofeng Chen

IPC: H01J37/32

Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.