公开(公告)号：US10062587B2

公开(公告)日：2018-08-28

申请号：US14996621

申请日：2016-01-15

申请人： Applied Materials, Inc.

发明人： Xinglong Chen ,  Jang-Gyoo Yang ,  Alexander Tam ,  Elisha Tam

IPC分类号： B23Q3/00 ,  H01L21/67 ,  F28D15/00

CPC分类号： H01L21/67103 ,  F28D15/00 ,  H01L21/67109

摘要： Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

公开(公告)号：US10811232B2

公开(公告)日：2020-10-20

申请号：US15671909

申请日：2017-08-08

申请人： Applied Materials, Inc.

发明人： Deepak Doddabelavangala Srikantaiah ,  Sheshraj L. Tulshibagwale ,  Saravjeet Singh ,  Alexander Tam

IPC分类号： H01J37/32 ,  B05B1/00 ,  B05B1/18

摘要： Embodiments of the disclosure relate to a multi-plate faceplate having a first plate and a second plate. The first plate has a plurality of first plate openings. The second plate has a first surface, an opposed second surface and a plurality of second plate openings extending therethrough. The first surface is mechanically coupled to the first plate. A second plate opening has a conical portion configured to be fluidly coupled to a first plate opening and decreasing in cross-section in the depth direction thereof from the second surface. A surface of the conical portion is coated with a protective coating adjacent to the first and second surfaces. In another embodiment, the first plate has a protrusion extending therefrom into a recess formed inwardly of the first surface. The protrusion has a passage extending therethrough fluidly connected to the recess, which is fluidly connected to the second plate opening.

公开(公告)号：US11302520B2

公开(公告)日：2022-04-12

申请号：US14747367

申请日：2015-06-23

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Dmitry Lubomirsky ,  Kirby H. Floyd ,  Son T. Nguyen ,  David Palagashvili ,  Alexander Tam ,  Shaofeng Chen

IPC分类号： H01J37/32

摘要： Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

公开(公告)号：US09267739B2

公开(公告)日：2016-02-23

申请号：US13723516

申请日：2012-12-21

申请人： Applied Materials, Inc.

发明人： Xinglong Chen ,  Jang-Gyoo Yang ,  Alexander Tam ,  Elisha Tam

IPC分类号： F28D15/00 ,  H01L21/67

CPC分类号： H01L21/67103 ,  F28D15/00 ,  H01L21/67109

摘要： Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

摘要翻译： 对半导体处理装置的基板支撑组件进行说明。 组件可以包括底座和与底座联接的杆。 基座可以被配置成提供具有独立控制的温度的多个区域。 每个区域可以包括流体通道，以通过循环从杆中的内部通道接收的温度控制的流体来在区域内提供基本均匀的温度控制。 流体通道可以包括以平行逆流装置构造的多个部分。 基座还可以包括可被配置为在基座的区域之间提供热隔离的流体吹扫通道。

公开(公告)号：US20160126118A1

公开(公告)日：2016-05-05

申请号：US14996621

申请日：2016-01-15

申请人： Applied Materials, Inc.

发明人： Xinglong Chen ,  Jang-Gyoo Yang ,  Alexander Tam ,  Elisha Tam

IPC分类号： H01L21/67

CPC分类号： H01L21/67103 ,  F28D15/00 ,  H01L21/67109

摘要： Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

摘要翻译： 对半导体处理装置的基板支撑组件进行说明。 组件可以包括底座和与底座联接的杆。 基座可以被配置成提供具有独立控制的温度的多个区域。 每个区域可以包括流体通道，以通过循环从杆中的内部通道接收的温度控制的流体来在区域内提供基本均匀的温度控制。 流体通道可以包括以平行逆流装置构造的多个部分。 基座还可以包括可被配置为在基座的区域之间提供热隔离的流体吹扫通道。

公开(公告)号：US20190304756A1

公开(公告)日：2019-10-03

申请号：US16374420

申请日：2019-04-03

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Toan Q. Tran ,  Lili Ji ,  Dmitry Lubomirsky ,  Akhil Devarakonda ,  Tien Fak Tan ,  Tae Won Kim ,  Saravjeet Singh ,  Alexander Tam ,  Jingchun Zhang ,  Jing J. Zhang

IPC分类号： H01J37/32 ,  C23C4/134 ,  C23C4/11

摘要： Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

公开(公告)号：US09644267B2

公开(公告)日：2017-05-09

申请号：US13937815

申请日：2013-07-09

申请人： Applied Materials, Inc.

发明人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James David Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

IPC分类号： C23C16/455 ,  C30B25/14 ,  C30B29/40

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

公开(公告)号：US08679956B2

公开(公告)日：2014-03-25

申请号：US13751889

申请日：2013-01-28

申请人： Applied Materials, Inc.

发明人： Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： H01L21/36 ,  C23C16/00

CPC分类号： B05B1/18 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/52 ,  C30B25/14 ,  H01L21/67115

摘要： A method and apparatus that includes a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume is provided. The showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. The showerhead may include a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.

摘要翻译： 提供了一种包括处理室的方法和装置，该处理室包括具有单独的入口和通道的喷头，用于将不同的处理气体输送到室的处理容积中，而不会在进入处理容积之前混合气体。 淋浴头包括一个或多个清洁气体管道，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。 淋浴头可以包括多个计量端口，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。 结果，与仅通过处理气体通道将清洁气体引入室中相比，可以更有效和有效地清洁处理室部件。