公开(公告)号：US20250069895A1

公开(公告)日：2025-02-27

申请号：US18236042

申请日：2023-08-21

Applicant: Applied Materials, Inc.

Inventor： Anatoli Chlenov ,  Kenji Takeshita ,  Alok Ranjan ,  Qian Fu ,  Hikaru Watanabe ,  Akhil Mehrotra ,  Lei Liao ,  Zhonghua Yao ,  Sonam Dorje Sherpa

IPC: H01L21/311 ,  H01J37/32

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of a silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The contacting may etch a feature in the layer of silicon-containing material. A substrate support pedestal temperature may be maintained at less than or about −20° C. during the semiconductor processing method.

公开(公告)号：US20230245895A1

公开(公告)日：2023-08-03

申请号：US17590084

申请日：2022-02-01

Applicant: Applied Materials, Inc.

Inventor： Zhonghua Yao ,  Qian Fu ,  Aaron Eppler ,  Mukund Srinivasan

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L21/02129 ,  H01L21/02205

Abstract: Exemplary semiconductor processing methods may include depositing a boron-containing material on the substrate. The boron-containing material may extend along sidewalls of the one or more features in the substrate. The methods may include forming a plasma of an oxygen-containing precursor and contacting the substrate with plasma effluents of the oxygen-containing precursor. The contacting may etch a portion of the one or more features in the substrate. The contacting may oxidize the boron-containing material.

公开(公告)号：US11087989B1

公开(公告)日：2021-08-10

申请号：US16905246

申请日：2020-06-18

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Zhonghua Yao ,  Sunil Srinivasan ,  Sang Wook Park

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311

Abstract: A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

公开(公告)号：US20240128091A1

公开(公告)日：2024-04-18

申请号：US18221063

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Zhonghua Yao ,  Qian Fu ,  Mark J. Saly ,  Yang Yang ,  Jeffrey W. Anthis ,  David Knapp ,  Rajesh Sathiyanarayanan

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/67069

Abstract: A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

公开(公告)号：US11515166B2

公开(公告)日：2022-11-29

申请号：US17371176

申请日：2021-07-09

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Zhonghua Yao ,  Sunil Srinivasan ,  Sang Wook Park

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311

Abstract: A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

公开(公告)号：US11996294B2

公开(公告)日：2024-05-28

申请号：US17983560

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Zhonghua Yao ,  Sunil Srinivasan ,  Sang Wook Park

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02112 ,  H01L21/02263 ,  H01L21/0234 ,  H01L21/02348 ,  B81C2201/0138 ,  H01L21/0228 ,  H01L21/30655 ,  H01L21/31116

Abstract: The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.

公开(公告)号：US11521849B2

公开(公告)日：2022-12-06

申请号：US16391219

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook Park ,  Sunil Srinivasan ,  Rajinder Dhindsa ,  Jonathan Sungehul Kim ,  Lin Yu ,  Zhonghua Yao ,  Olivier Luere

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.