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1.发明授权公开(公告)号：US06752899B1
公开(公告)日：2004-06-22
申请号：US10050499
申请日：2002-01-16
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , C23C14/545 , C23C16/52
摘要： The invention provides a system and process for depositing films, wherein an acoustic microbalance is used for process monitoring and/or control. The acoustic microbalance is placed in a deposition chamber and may optionally be mounted on a semiconductor substrate, such as a silicon wafer, on which a film is being deposited. Data from the acoustic microbalance is employed to detect a process endpoint, determine an adjustment to process conditions for a subsequent batch, and/or provide feedback control over current process conditions. One aspect of the invention involves the application of a model or database to correct for differences between the extent of deposition on an acoustic microbalance cantilever and the extent of deposition on a substrate being processed. Another aspect of the invention takes a probabilistic approach to employing acoustic microbalance data. The acoustic microbalance data is employed, optionally together with other process data, as evidence in a probabilistic dependancy model that infers the process state and/or predicts a process outcome.
摘要翻译： 本发明提供一种用于沉积膜的系统和方法，其中使用声学微量天平进行过程监测和/或控制。 声学微量天平被放置在沉积室中，并且可以可选地安装在其上沉积有膜的半导体衬底（例如硅晶片）上。 来自声学微量天平的数据用于检测过程终点，确定对后续批次的处理条件的调整，和/或提供关于当前工艺条件的反馈控制。 本发明的一个方面涉及应用模型或数据库来校正声学微平衡悬臂上的沉积程度与正在处理的基底上的沉积程度之间的差异。 本发明的另一方面采用使用声学微量天平数据的概率方法。 声学微量天平数据可选地与其他过程数据一起被用作推理过程状态和/或预测过程结果的概率依赖模型中的证据。
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公开(公告)号：US06828162B1
公开(公告)日：2004-12-07
申请号：US09894434
申请日：2001-06-28
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , G01N21/4738 , H01L21/02129 , H01L21/31625
摘要： A system for monitoring and controlling a boron phosphorous doped silicon oxide (BPSG) deposition and reflow process is provided. The system includes one or more light sources, each light source directing light to one or more portions of a wafer upon which BPSG is deposited. Light reflected from the BPSG is collected by a measuring system, which processes the collected light. Light passing through the BPSG may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the conformality of the BPSG deposition of the respective portions of the wafer. The measuring system provides BPSG deposition related data to a processor that determines the BPSG deposition of the respective portions of the wafer. The system also includes a plurality of reflow controlling devices, each such device corresponding to a respective portion of the wafer and providing for the heating and/or cooling thereof. The processor selectively controls the reflow controlling devices so as to regulate temperature of the respective portions of the wafer.
摘要翻译： 提供了一种用于监测和控制硼磷掺杂氧化硅（BPSG）沉积和回流工艺的系统。 该系统包括一个或多个光源，每个光源将光引导到沉积BPSG的晶片的一个或多个部分。 从BPSG反射的光被测量系统收集，该系统处理收集的光。 通过BPSG的光可以类似地由处理所收集的光的测量系统收集。 所收集的光表示晶片的各个部分的BPSG沉积的一致性。 测量系统将BPSG沉积相关数据提供给确定晶片各部分的BPSG沉积的处理器。 该系统还包括多个回流控制装置，每个这样的装置对应于晶片的相应部分并提供加热和/或冷却。 处理器选择性地控制回流控制装置，以便调节晶片各部分的温度。
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公开(公告)号：US06774989B1
公开(公告)日：2004-08-10
申请号：US10050453
申请日：2002-01-16
IPC分类号： G01N2100
CPC分类号： G01N21/956 , G01N21/47
摘要： A system for detecting voids in an ILD layer is provided. The system includes one or more light sources, each light source directing light to respective portions of the ILD layer. Light reflected from the respective portions is collected by a measuring system that processes the collected light. The collected light is indicative of the presence of voids in the respective portions of the ILD layer. The measuring system provides ILD layer void related data to a processor that determines whether voids exist in the respective portions of the ILD layer. The processor selectively marks the ILD layer portions to facilitate further processing and/or destruction of the IC with the ILD layer voids.
摘要翻译： 提供一种用于检测ILD层中的空隙的系统。 该系统包括一个或多个光源，每个光源将光引导到ILD层的相应部分。 通过处理收集的光的测量系统收集从各个部分反射的光。 收集的光指示在ILD层的各个部分中存在空隙。 测量系统向处理器提供ILD层空隙相关数据，该处理器确定在ILD层的相应部分中是否存在空隙。 处理器选择性地标记ILD层部分以促进具有ILD层空隙的IC的进一步处理和/或破坏。
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4.发明授权公开(公告)号：US07079975B1
公开(公告)日：2006-07-18
申请号：US09845231
申请日：2001-04-30
CPC分类号： G01B11/0683 , G01B11/0625 , G01B17/025 , G01N21/47 , G01N21/8422 , G01N21/88 , G01N21/94
摘要： A system for monitoring and controlling the deposition of thin films employed in semiconductor fabrication is provided. The system includes one or more acoustic and/or ultrasonic wave sources, each source directing waves onto one or more thin films deposited on a wafer. Waves reflected from the thin film is collected by a monitoring system, which processes the collected waves. Waves passing through the thin film may similarly be collected by the monitoring system, which processes the collected waves. The collected waves are indicative of the presence of impurities and/or defects in the deposited thin film. The monitoring system analyzes and provides the collected wave data to a processor, which determines whether adjustments to thin film deposition parameters are needed. The system also includes a plurality of thin film deposition devices associated with depositing thin films on the wafer. The processor selectively controls thin film deposition parameters and devices to facilitate regulating deposition.
摘要翻译： 提供了用于监测和控制用于半导体制造中的薄膜沉积的系统。 该系统包括一个或多个声波和/或超声波波束，每个源将波束引导到沉积在晶片上的一个或多个薄膜上。 从薄膜反射的波浪由监测系统收集，监测系统处理收集的波。 通过薄膜的波浪可以类似地由监测系统收集，监测系统处理所收集的波。 收集的波表示沉积的薄膜中存在杂质和/或缺陷。 监测系统分析并将收集的波数据提供给处理器，其确定是否需要对薄膜沉积参数进行调整。 该系统还包括与在晶片上沉积薄膜相关联的多个薄膜沉积装置。 处理器选择性地控制薄膜沉积参数和装置以便于调节沉积。
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5.发明授权公开(公告)号：US06633392B1
公开(公告)日：2003-10-14
申请号：US10052142
申请日：2002-01-17
IPC分类号： G01B1128
CPC分类号： H01L21/67253 , G01N23/20 , H01L22/26
摘要： One aspect of the present invention relates to a method to facilitate formation of an oxide portion of an anti-reflective layer on a substrate. The method involves the steps of forming an oxidized portion of an anti-reflective coating over an anti-reflective layer disposed on the substrate; reflecting a beam of x-ray radiation at the oxidized portion; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the oxidized portion based on the measurement signal while the oxidized portion is being formed at the substrate.
摘要翻译： 本发明的一个方面涉及一种便于在基底上形成抗反射层的氧化物部分的方法。 该方法包括以下步骤：在设置在基底上的抗反射层上形成抗反射涂层的氧化部分; 在氧化部分反射一束x射线辐射; 基于所述光束的反射部分生成测量信号; 并且在氧化部分形成在基板上的同时基于测量信号确定氧化部分的厚度。
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6.发明授权In-situ chemical composition monitor on wafer during plasma etching for defect control 失效用于缺陷控制的等离子体蚀刻期间晶片上的原位化学成分监测公开(公告)号：US06753261B1
公开(公告)日：2004-06-22
申请号：US10052173
申请日：2002-01-17
申请人： Khoi A. Phan , Arvind Halliyal , Bhanwar Singh
发明人： Khoi A. Phan , Arvind Halliyal , Bhanwar Singh
IPC分类号： H01L21302
CPC分类号： H01J37/32935 , H01L21/31116 , H01L21/32136
摘要： One aspect of the present invention relates to a system and method for monitoring in-situ a chemical composition at or near a surface of a wafer during plasma etch to detect defects The method involves the steps of providing a semiconductor substrate comprising at least one top layer, wherein the semiconductor substrate comprises at least one chemical-containing contaminant; subjecting the semiconductor substrate to a plasma etch process, whereby at least a portion of the top layer is removed; during the plasma etch process, detecting for a presence of the chemical-containing contaminant using one of an Auger Electron Spectroscopy system or Energy Dispersive X-ray Analysis system; and if present, determining whether the presence of the chemical-containing contaminant exceeds a threshold limit.
摘要翻译： 本发明的一个方面涉及用于在等离子体蚀刻期间在晶片表面处或附近原位监测化学成分以检测缺陷的系统和方法。该方法包括提供半导体衬底的步骤，该半导体衬底包括至少一个顶层 ，其中所述半导体衬底包括至少一种含化学物质的污染物; 对半导体衬底进行等离子体蚀刻工艺，从而去除顶层的至少一部分; 在等离子体蚀刻工艺期间，使用俄歇电子能谱系统或能量分散X射线分析系统之一检测含化学物质的污染物的存在; 并且如果存在，确定含化学物质的污染物的存在是否超过阈值限度。
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7.发明授权Monitoring of concentration of nitrogen in nitrided gate oxides, and gate oxide interfaces 失效监测氮化栅氧化物和栅极氧化物界面的氮浓度公开(公告)号：US06721046B1
公开(公告)日：2004-04-13
申请号：US09903885
申请日：2001-07-12
IPC分类号： G01B1100
CPC分类号： H01L21/28185 , G01N21/4788 , G01N21/55 , G01N21/8422 , G01N2021/4126 , G01N2021/4735 , G01N2021/8416 , H01L21/28202 , H01L22/26 , H01L29/518
摘要： A system for regulating nitrided gate oxide layer formation is provided. The system includes one or more light sources, each light source directing light to one or more nitrided gate oxide layers being deposited and/or formed on a wafer. Light reflected from the nitrided gate oxide layers is collected by a measuring system, which processes the collected light. The collected light is indicative of the nitrogen concentration of the respective nitrided gate oxide layers on the wafer. The measuring system provides nitrogen concentration related data to a processor that determines the nitrogen concentration of the respective nitrided gate oxide layers on the wafer. The system also includes one or more nitrided gate oxide layer formers where a nitride gate oxide former corresponds to a respective portion of the wafer and provides for nitrided gate oxide layer formation thereon. The processor selectively controls the nitrided gate oxide layer formers to regulate nitrided gate oxide layer formation on the respective nitrided gate oxide layer formations on the wafer, and particularly to control, in situ, the amount of nitrogen incorporated into the gate oxide layer.
摘要翻译： 提供了一种用于调节氮化栅氧化层形成的系统。 该系统包括一个或多个光源，每个光源将光引导到在晶片上沉积和/或形成的一个或多个氮化栅极氧化物层。 从氮化栅氧化层反射的光被测量系统收集，该系统处理所收集的光。 所收集的光表示晶片上相应的氮化栅极氧化物层的氮浓度。 测量系统向处理器提供氮浓度相关数据，该处理器确定晶片上相应的氮化栅极氧化物层的氮浓度。 该系统还包括一个或多个氮化栅极氧化物层形成器，其中氮化物栅极氧化物形成体对应于晶片的相应部分并且在其上形成氮化的栅极氧化物层。 处理器选择性地控制氮化栅极氧化物层形成器来调节晶片上相应的氮化栅极氧化物层形成物上的氮化栅极氧化物层形成，并且特别地原位控制掺入到栅极氧化物层中的氮的量。
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公开(公告)号：US06727995B1
公开(公告)日：2004-04-27
申请号：US09903884
申请日：2001-07-12
IPC分类号： G01B1106
CPC分类号： H01L21/28194 , G01B11/0625 , H01L21/67253 , H01L29/517 , H01L29/518
摘要： A system for regulating gate oxide layer formation is provided. The system includes one or more light sources, each light source directing light to one or more gate oxide layers being deposited and/or formed on a wafer. Light reflected from the gate oxide layers is collected by a measuring system, which processes the collected light. The collected light is indicative of the thickness and/or uniformity of the respective gate oxide layers on the wafer. The measuring system provides thickness and/or uniformity related data to a processor that determines the thickness and/or uniformity of the respective gate oxide layers on the wafer. The system also includes a plurality of gate oxide layer formers where each gate oxide former corresponds to a respective portion of the wafer and provides for gate oxide layer formation thereon. The processor selectively controls the gate oxide layer formers to regulate gate oxide layer formation on the respective gate oxide layer formations on the wafer.
摘要翻译： 提供了一种用于调节栅氧化层形成的系统。 该系统包括一个或多个光源，每个光源将光引导到在晶片上沉积和/或形成的一个或多个栅极氧化物层。 从栅极氧化层反射的光被测量系统收集，该系统处理所收集的光。 所收集的光表示晶片上各个栅极氧化物层的厚度和/或均匀性。 测量系统向处理器提供厚度和/或均匀性相关数据，其确定晶片上各个栅极氧化物层的厚度和/或均匀性。 该系统还包括多个栅极氧化物层形成器，其中每个栅极氧化物形成体对应于晶片的相应部分并且在其上形成栅极氧化物层。 处理器选择性地控制栅极氧化物层形成器以调节在晶片上的各个栅极氧化物层形成上的栅极氧化物层形成。
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9.发明授权Oxide/nitride or oxide/nitride/oxide thickness measurement using scatterometry 失效使用散射测量的氧化物/氮化物或氧化物/氮化物/氧化物厚度测量公开(公告)号：US06589804B1
公开(公告)日：2003-07-08
申请号：US09904089
申请日：2001-07-12
IPC分类号： H01L2100
CPC分类号： G01B11/0625
摘要： A system for regulating ON and/or ONO dielectric formation is provided. The system includes one or more light sources, each light source directing light to one or more oxide and/or nitride layers being deposited and/or formed on a wafer. Light reflected from the oxide and/or nitride layers is collected by a measuring system, which processes the collected light. The collected light is indicative of the thickness and/or uniformity of the respective oxide and/or nitride layers on the wafer. The measuring system provides thickness and/or uniformity related data to a processor that determines the thickness and/or uniformity of the respective oxide and/or nitride layers on the wafer. The system also includes a plurality of oxide/nitride formers; each oxide/nitride former corresponding to a respective portion of the wafer and providing for ON and/or ONO formation thereon. The processor selectively controls the oxide/nitride formers to regulate oxide and/or nitride layer formation on the respective ON and/or ONO formations on the wafer.
摘要翻译： 提供了一种用于调节ON和/或ONO电介质形成的系统。 该系统包括一个或多个光源，每个光源将光引导到在晶片上沉积和/或形成的一个或多个氧化物和/或氮化物层。 从氧化物和/或氮化物层反射的光被测量系统收集，该系统处理收集的光。 所收集的光指示晶片上各个氧化物和/或氮化物层的厚度和/或均匀性。 测量系统向处理器提供厚度和/或均匀性相关数据，其确定晶片上相应氧化物和/或氮化物层的厚度和/或均匀性。 该系统还包括多个氧化物/氮化物成形器; 每个氧化物/氮化物成形器对应于晶片的相应部分并且在其上提供ON和/或ONO形成。 处理器选择性地控制氧化物/氮化物成形器以调节晶片上相应的ON和/或ONO形成上的氧化物和/或氮化物层的形成。
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10.发明授权In situ monitoring of sheet resistivity of silicides during rapid thermal annealing using electrical methods 失效使用电气方法在快速热退火期间原位监测硅化物的薄层电阻率公开(公告)号：US06815229B1
公开(公告)日：2004-11-09
申请号：US09804283
申请日：2001-03-12
IPC分类号： H01L2166
CPC分类号： H01L22/20 , H01L21/28518
摘要： A system and method for analyzing sheet resistivity of a layer on a wafer employing electrical methods and for controlling rapid thermal annealing (RTA) of the layer is provided. The system includes components for performing RTA on the layer and components for analyzing the sheet resistivity of one or more portions of the layer upon which RTA was performed. The system further includes a feedback generator adapted to accept sheet resistivity data and to produce feedback information that can be used to control the RTA components. The system further includes a data store that can be employed in machine learning and/or to facilitate generating feedback information that can be employed to control RTA and a monitoring application that can be employed to schedule maintenance on the various components in the system.
摘要翻译： 提供了一种使用电气方法和用于控制该层的快速热退火（RTA）来分析晶片上的层的电阻率的系统和方法。 该系统包括用于在层上执行RTA的组件和用于分析执行RTA的层的一个或多个部分的薄层电阻率的组件。 该系统还包括适于接收片电阻率数据并产生可用于控制RTA分量的反馈信息的反馈发生器。 该系统还包括可用于机器学习和/或便于产生可用于控制RTA的反馈信息的数据存储器和可用于对系统中的各种组件进行维护的监视应用程序。
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