公开(公告)号：US08728879B2

公开(公告)日：2014-05-20

申请号：US13547856

申请日：2012-07-12

申请人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

发明人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

IPC分类号： H01L21/20

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

公开(公告)号：US08143164B2

公开(公告)日：2012-03-27

申请号：US12368110

申请日：2009-02-09

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US20100203731A1

公开(公告)日：2010-08-12

申请号：US12368110

申请日：2009-02-09

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/306 ,  C09D1/00 ,  H01L21/34

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US20120325109A1

公开(公告)日：2012-12-27

申请号：US13335011

申请日：2011-12-22

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： C09D1/00

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US08859427B2

公开(公告)日：2014-10-14

申请号：US13335011

申请日：2011-12-22

申请人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Sun ,  Jinhong Tong

发明人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Sun ,  Jinhong Tong

IPC分类号： H01L21/302 ,  C23C18/54 ,  H01L21/288 ,  H01L21/768 ,  H01L21/02 ,  C23C18/16

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US20120295436A1

公开(公告)日：2012-11-22

申请号：US13547856

申请日：2012-07-12

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/768

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US08609475B2

公开(公告)日：2013-12-17

申请号：US13602637

申请日：2012-09-04

申请人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

发明人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

CPC分类号： H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

摘要翻译： 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

公开(公告)号：US07884036B1

公开(公告)日：2011-02-08

申请号：US11777152

申请日：2007-07-12

申请人： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

发明人： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

IPC分类号： H01L21/00

CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76849

摘要： Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.

摘要翻译： 呈现用于处理衬底以用于后续工艺的方法，所述方法包括：接收衬底，所述衬底包括导电区域和电介质区域; 以及以使得电介质区域被氧化以变得越来越亲水的方式将氧化剂施加到衬底上，以便能够在随后的工艺中进入导电区域，其中将电介质区域处理到大约1至 5个原子层。 在一些实施例中，方法还包括处理衬底，其中选择性地增强对导电区域的处理。 在一些实施方案中，氧化剂包括大气压等离子体和UV辐射。

公开(公告)号：US20070166989A1

公开(公告)日：2007-07-19

申请号：US11647882

申请日：2006-12-29

申请人： Zachary Fresco ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang ,  Thomas Boussie ,  Nitin Kumar ,  Jinhong Tong ,  Anh Duong

发明人： Zachary Fresco ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang ,  Thomas Boussie ,  Nitin Kumar ,  Jinhong Tong ,  Anh Duong

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/288 ,  B82Y30/00 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/7685

摘要： Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

摘要翻译： 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

公开(公告)号：US08535972B2

公开(公告)日：2013-09-17

申请号：US12172110

申请日：2008-07-11

申请人： Zachary M. Fresco ,  Chi-I Lang ,  Jinhong Tong ,  Anh Duong ,  Nitin Kumar ,  Anna Tsimelzon ,  Tony Chiang

发明人： Zachary M. Fresco ,  Chi-I Lang ,  Jinhong Tong ,  Anh Duong ,  Nitin Kumar ,  Anna Tsimelzon ,  Tony Chiang

IPC分类号： H01L51/40

CPC分类号： H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.