公开(公告)号：US5648957A

公开(公告)日：1997-07-15

申请号：US388973

申请日：1995-02-15

申请人： Byoung ki Lee ,  Jung-kyu Lee

发明人： Byoung ki Lee ,  Jung-kyu Lee

IPC分类号： H04Q3/00 ,  H04L12/931 ,  H04L12/933 ,  H04L12/937 ,  H04Q3/52 ,  H04L12/56

CPC分类号： H04L12/5601 ,  H04L49/1561 ,  H04L49/255 ,  H04L2012/5681

摘要： A distributor with controlled switching elements (CSE) which simplifies hardware construction by distributing the function of a running adder into a reverse banyan network. The distributor comprises a CSE-based network using switching stages, each switching stage having control switching elements. A control signal input stage switches two packet input signal switching channels, each stage receiving each control signal from an output stage having switching elements. An active packet counter counts and generates an output signal which represents the number of active packets inputted to the CSE network. A tail-of-queue register is used for storing output vectors.

摘要翻译： 具有受控开关元件（CSE）的分配器，其通过将运行中的加法器的功能分配到反向榕树网络来简化硬件构造。 分配器包括使用开关级的基于CSE的网络，每个开关级具有控制开关元件。 控制信号输入级切换两个分组输入信号切换通道，每个级从具有开关元件的输出级接收每个控制信号。 活动分组计数器计数并产生表示输入到CSE网络的活动分组的数量的输出信号。 队列尾寄存器用于存储输出向量。

公开(公告)号：US06344632B1

公开(公告)日：2002-02-05

申请号：US08962451

申请日：1997-10-31

申请人： Seung-il Yu ,  Jung-kyu Lee

发明人： Seung-il Yu ,  Jung-kyu Lee

IPC分类号： H05B368

CPC分类号： H01L21/67109 ,  H01L21/67103

摘要： A round heating plate for a heating chamber used in semiconductor device manufacturing provides uniform heating of the wafer from its center to its outside edges. The round heating plate includes a small-diameter round heating element and multiple ring-shaped elements arranged concentrically therewith. The round heating plate has the same shape as the wafer, and in the heating chamber, a pair of round heating plates is arranged so as to be concentric with a pair of wafers to be heated. During heating, the wafers are installed in a space formed between the heating plates.

摘要翻译： 在半导体器件制造中使用的用于加热室的圆形加热板使得晶片从其中心到其外部边缘均匀加热。 圆形加热板包括小直径圆形加热元件和与其同心布置的多个环形元件。 圆形加热板具有与晶片相同的形状，并且在加热室中，一对圆形加热板被布置成与要加热的一对晶片同心。 在加热期间，将晶片安装在形成在加热板之间的空间中。

公开(公告)号：US5842075A

公开(公告)日：1998-11-24

申请号：US928529

申请日：1997-09-12

申请人： Sung-hyeon Park ,  Sung-il Kim ,  Jung-kyu Lee

发明人： Sung-hyeon Park ,  Sung-il Kim ,  Jung-kyu Lee

IPC分类号： G03F7/30 ,  H01L21/027 ,  G03D5/04 ,  B08B3/04

CPC分类号： G03F7/3021 ,  Y10S134/902

摘要： A developing solution feed system for a semiconductor photolithography process feeds the developing solution while removing any gas contained in the solution at a high solution feed pressure. The developing solution feed system has a plurality of feed tanks and a developing solution feed line having a plurality of first connecting pipes, each connected to the feed tanks, a second connecting pipe connected to the first connecting pipe to be converged into one passage, and a plurality of third connecting pipes branching out from the second connecting pipe. The system also contains nozzles connected to the third connecting pipes to thereby sputter the developing solution onto wafers each located in process chambers, a gas removal device installed in the one passage of the second connecting pipe to thereby remove gas contained in the developing solution, and shut off valves, each installed in the third connecting pipes to thereby open and close passages, so that the developing solution can selectively be fed into only one process chamber at a time through the third connecting pipes.

摘要翻译： 用于半导体光刻工艺的显影溶液进料系统以高溶液进料压力除去溶液中所含的任何气体，同时进料显影溶液。 显影液供给系统具有多个进料罐和显影液供给管线，该供给罐具有多个第一连接管，每个第一连接管连接到进料罐，第二连接管连接到第一连接管以会聚在一个通道中，以及 从所述第二连接管分支出的多个第三连接管。 该系统还包括连接到第三连接管的喷嘴，从而将显影液溅射到位于处理室中的晶片上，气体去除装置安装在第二连接管的一个通道中，从而去除包含在显影溶液中的气体，以及 关闭阀，每个阀安装在第三连接管中，从而打开和关闭通道，使得显影溶液可以通过第三连接管一次选择性地进入一个处理室。

公开(公告)号：US06194281B1

公开(公告)日：2001-02-27

申请号：US08961448

申请日：1997-10-30

申请人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

发明人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

IPC分类号： H01L218242

CPC分类号： H01L28/84 ,  H01L27/10852

摘要： A method of forming an integrated circuit capacitor includes the steps of forming an insulating layer on an integrated circuit substrate, and forming a conductive layer on the insulating layer opposite the integrated circuit substrate. A patterned ozone tetraethylorthosilicate undoped silicate layer is formed on the conductive layer, and conductive spacers are formed along sidewalls of the ozone tetraethylorthosilicate undoped silicate layer. A dielectric layer is formed on the conductive spacers and on the first conductive layer, and a second conductive layer is formed on the dielectric layer opposite the first conductive layer in the conductive spacers.

摘要翻译： 形成集成电路电容器的方法包括以下步骤：在集成电路基板上形成绝缘层，并在与集成电路基板相对的绝缘层上形成导电层。 在导电层上形成图案化的四氧化四乙基原硅酸盐未掺杂的硅酸盐层，并且在臭氧四乙基原硅酸盐未掺杂的硅酸盐层的侧壁上形成导电间隔物。 在导电间隔物和第一导电层上形成电介质层，并且在与导电间隔物中的第一导电层相对的电介质层上形成第二导电层。

公开(公告)号：US6159849A

公开(公告)日：2000-12-12

申请号：US21005

申请日：1998-02-09

申请人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

发明人： Seong-hun Kang ,  Young-lark Koh ,  Jung-kyu Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/44

CPC分类号： H01L28/40 ,  H01L21/3185 ,  H01L27/10852 ,  H01L28/84

摘要： of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.

摘要翻译： 形成电介质层的方法包括以下步骤：在微电子衬底上形成电极，并且在电极的暴露部分上形成凹陷和突起，从而增加其表面积。 包括凹陷和突起的电极的暴露部分被硝化，并且在形成凹陷和突起的步骤期间和在形成凹陷和突起的步骤之间并且在电极的暴露部分硝化之后电极不暴露于氧气。 然后在硝化电极上形成氮化物层。 还讨论了相关结构。

公开(公告)号：US5990016A

公开(公告)日：1999-11-23

申请号：US997382

申请日：1997-12-23

申请人： Byong-dong Kim ,  Jung-kyu Lee ,  Sung-il Kim

发明人： Byong-dong Kim ,  Jung-kyu Lee ,  Sung-il Kim

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/3065

CPC分类号： H01L21/67069

摘要： A dry etching method and apparatus improves the uniformity of etching a wafer in the manufacture of a semiconductor device. The dry etching apparatus has a susceptor supporting the wafer, a cooling system installed in the susceptor, an upper RF (radio frequency) electrode which may incorporate a gas diffuser for spraying reactive gas toward the wafer, and an RF power source for producing an electric field used to react the gas and generate plasma. The gap between the upper RF electrode and the susceptor is configured to accommodate for distortions in the wafer or other processing requirements. In addition, the nozzles of the gas diffuser can be configured to spray different amounts of gas to also enhance the etching uniformity. Finally, one of the electrodes may be divided into concentric sections. In this case, the RF power source can generate electric fields of different intensities at the sections. When the divided electrode is the susceptor, the cooling system cools the sections to different temperatures to in turn temperature-condition the wafer in a manner determined in advance to enhance the uniformity of the etching process.

摘要翻译： 干蚀刻方法和装置提高了在制造半导体器件时蚀刻晶片的均匀性。 干式蚀刻装置具有：支承晶片的基座，安装在基座中的冷却系统，可以并入用于向晶片喷射反应性气体的气体扩散器的上部射频（射频）电极;以及用于产生电气的RF电源 用于反应气体并产生等离子体的场。 上RF电极和基座之间的间隙被配置为适应晶片中的失真或其它处理要求。 此外，气体扩散器的喷嘴可以被配置为喷射不同量的气体，以增强蚀刻均匀性。 最后，其中一个电极可以被分成同心的部分。 在这种情况下，RF电源可以在各部分产生不同强度的电场。 当分离的电极是基座时，冷却系统将部分冷却到不同的温度，从而以预先确定的方式温度调节晶片以增强蚀刻工艺的均匀性。