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    LEUKEMIA STEM CELL TARGETING LIGANDS AND METHODS OF USE
    3.
    发明申请
    LEUKEMIA STEM CELL TARGETING LIGANDS AND METHODS OF USE 有权
    LEUKEMIA干细胞靶向配体及其使用方法

    公开(公告)号：US20140248633A1

    公开(公告)日：2014-09-04

    申请号：US14130909

    申请日：2012-07-09

    申请人： Chong-xian Pan ,  Hongyong Zhang

    发明人： Chong-xian Pan ,  Hongyong Zhang

    IPC分类号： C07K7/06 ,  G01N33/574

    CPC分类号： C07K7/06 ,  A61K47/62 ,  A61K47/6907 ,  A61K51/08 ,  C07K2319/30 ,  G01N33/57426 ,  G01N2333/7056

    摘要： The present invention is directed to C-type lectin-like molecule-1 (CLL1) specific ligand peptides, comprising the amino acid motif LR(S/T), and methods of their use, e.g., for imaging detection for diagnosis of leukemia and the presence of leukemic stem cells (LSCs) and targeted therapy against leukemia mediated at least in part by CLL1-expressing LSCs.

    摘要翻译： 本发明涉及包含氨基酸基序LR（S / T）的C型凝集素样分子-1（CLL1）特异性配体肽及其使用方法，例如用于诊断白血病的成像检测和 白细胞干细胞（LSCs）的存在和至少部分由CLL1表达的LSCs介导的针对白血病的靶向治疗。

    Liquid crystal display device having particular conductive layer
    5.
    发明授权
    Liquid crystal display device having particular conductive layer 失效
    具有特定导电层的液晶显示装置

    公开(公告)号：US08665411B2

    公开(公告)日：2014-03-04

    申请号：US13484800

    申请日：2012-05-31

    申请人： Hongyong Zhang

    发明人： Hongyong Zhang

    IPC分类号： G02F1/1339 ,  G02F1/1345

    CPC分类号： G02F1/136286 ,  G02F1/1339 ,  G02F1/13454

    摘要： Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. This permits unification of the cross-sectional structure of the sealing material formation region.

    摘要翻译： 提供了用于统一密封材料的步骤的技术，使得液晶显示装置的成品率和可靠性变高。 扫描线的起始膜被图案化，使得在区域R1和R2中形成不电连接的第一层的棱形虚拟布线301，并且从像素部分延伸的布线302形成在区域R3中，并且布线303具有 连接端部303a形成在区域R4中。 在形成层间绝缘膜之后，将信号线的起始膜图案化，以形成用于第二层的虚拟布线304，以将布线301至303之间的间隙，以及布线305和布线303 从像素部分延伸的相互连接。 这允许密封材料形成区域的横截面结构的统一。

    Method of fabricating semiconductor device
    6.
    发明授权
    Method of fabricating semiconductor device 有权

    公开(公告)号：US08154136B2

    公开(公告)日：2012-04-10

    申请号：US12883526

    申请日：2010-09-16

    申请人： Hongyong Zhang

    发明人： Hongyong Zhang

    IPC分类号： H01L23/48

    摘要： Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved.

    Laser process
    8.
    发明授权
    Laser process 失效
    激光工艺

    公开(公告)号：US07985635B2

    公开(公告)日：2011-07-26

    申请号：US11321641

    申请日：2005-12-30

    申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hiroaki Ishihara

    发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hiroaki Ishihara

    IPC分类号： H01L21/00

    CPC分类号： G02B27/09 ,  C23C14/58 ,  C23C14/5813 ,  C23C16/56 ,  G02B27/0966 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/84 ,  H01L27/1285

    摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10 N≦−0.02(E−350), where N is the number of shots of the pulsed laser beam.

    摘要翻译： 一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加 密度E（mJ / cm2），条件是其满足关系：log10 N＆nlE; -0.02（E-350），其中N是脉冲激光束的镜头数。

    Semiconductor device and method of fabricating same
    10.
    发明授权
    Semiconductor device and method of fabricating same 失效
    半导体装置及其制造方法

    公开(公告)号：US07838968B2

    公开(公告)日：2010-11-23

    申请号：US11293111

    申请日：2005-12-05

    申请人： Hongyong Zhang ,  Satoshi Teramoto

    发明人： Hongyong Zhang ,  Satoshi Teramoto

    IPC分类号： H01L23/58 ,  H01L27/01 ,  H01L29/04

    CPC分类号： H01L21/31111 ,  G02F1/136227 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/76801 ,  H01L21/76802 ,  H01L27/12 ,  H01L27/1248

    摘要： There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.

    摘要翻译： 公开了具有提高的可靠性的TFT。 形成TFT的层间电介质膜由氮化硅膜构成。 其它层间绝缘膜也由氮化硅制成。 形成这些层间电介质膜的氮化硅膜内的应力设定在-5×109〜5×10 9 dyn / cm 2之间。 这可以抑制层间绝缘膜的剥离和形成接触孔的困难。 此外，可以抑制从活性层释放氢。 以这种方式，可以获得高度可靠的TFT。