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    Junction profile engineering using staged thermal annealing
    5.
    发明授权
    Junction profile engineering using staged thermal annealing 有权
    接头型材工程采用分段热退火

    公开(公告)号：US08058134B2

    公开(公告)日：2011-11-15

    申请号：US12618052

    申请日：2009-11-13

    申请人： Li-Ting Wang ,  Keh-Chiang Ku ,  Yu-Chang Lin ,  Nai-Han Cheng ,  Li-Ping Huang

    发明人： Li-Ting Wang ,  Keh-Chiang Ku ,  Yu-Chang Lin ,  Nai-Han Cheng ,  Li-Ping Huang

    IPC分类号： H01L21/336

    CPC分类号： H01L21/324 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/7833

    摘要： An annealing method includes performing an activation annealing on a wafer with a peak temperature of greater than about 1200° C., wherein the activation annealing has a first duration; and performing a defect-recovery annealing on the wafer at a defect-recovery temperature lower than the peak temperature for a second duration. The second duration is longer than the first duration. The annealing method includes no additional annealing steps at temperatures greater than about 1200° C., and no room-temperature cooling step exists between the activation annealing and the defect-recovery annealing.

    摘要翻译： 退火方法包括在峰值温度大于约1200℃的晶片上进行激活退火，其中活化退火具有第一持续时间; 以及在低于所述峰值温度的缺陷恢复温度下对所述晶片进行缺陷恢复退火，持续第二持续时间。 第二个持续时间比第一个持续时间长。 退火方法在大于约1200℃的温度下不包括额外的退火步骤，并且在活化退火和缺陷恢复退火之间不存在室温冷却步骤。

    Junction Profile Engineering Using Staged Thermal Annealing
    6.
    发明申请
    Junction Profile Engineering Using Staged Thermal Annealing 有权
    接头型材工程使用分段热退火

    公开(公告)号：US20100210086A1

    公开(公告)日：2010-08-19

    申请号：US12618052

    申请日：2009-11-13

    申请人： Li-Ting Wang ,  Keh-Chiang Ku ,  Yu-Chang Lin ,  Nai-Han Cheng ,  Li-Ping Huang

    发明人： Li-Ting Wang ,  Keh-Chiang Ku ,  Yu-Chang Lin ,  Nai-Han Cheng ,  Li-Ping Huang

    IPC分类号： H01L21/336

    CPC分类号： H01L21/324 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/7833

    摘要： An annealing method includes performing an activation annealing on a wafer with a peak temperature of greater than about 1200° C., wherein the activation annealing has a first duration; and performing a defect-recovery annealing on the wafer at a defect-recovery temperature lower than the peak temperature for a second duration. The second duration is longer than the first duration. The annealing method includes no additional annealing steps at temperatures greater than about 1200° C., and no room-temperature cooling step exists between the activation annealing and the defect-recovery annealing.

    摘要翻译： 退火方法包括在峰值温度大于约1200℃的晶片上进行激活退火，其中活化退火具有第一持续时间; 以及在低于所述峰值温度的缺陷恢复温度下对所述晶片进行缺陷恢复退火，持续第二持续时间。 第二个持续时间比第一个持续时间长。 退火方法在大于约1200℃的温度下不包括额外的退火步骤，并且在活化退火和缺陷恢复退火之间不存在室温冷却步骤。

    Beam monitoring device, method, and system
    7.
    发明授权
    Beam monitoring device, method, and system 有权
    光束监测装置，方法和系统

    公开(公告)号：US08766207B2

    公开(公告)日：2014-07-01

    申请号：US13241392

    申请日：2011-09-23

    申请人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01J37/244

    CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

    摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

    摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。

    ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL
    8.
    发明申请
    ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL 有权
    离子植入与充电和方向控制

    公开(公告)号：US20130140987A1

    公开(公告)日：2013-06-06

    申请号：US13308614

    申请日：2011-12-01

    申请人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01J37/06

    CPC分类号： H01J37/026 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/06 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/31705

    摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

    Dosage accuracy monitoring systems of implanters
    10.
    发明申请
    Dosage accuracy monitoring systems of implanters 有权
    注射机的剂量精度监测系统

    公开(公告)号：US20080296472A1

    公开(公告)日：2008-12-04

    申请号：US11809644

    申请日：2007-06-01

    申请人： Juan-Lin Chen ,  Yung-Fu Yeh ,  Yuk-Tong Lee ,  Nai-Han Cheng

    发明人： Juan-Lin Chen ,  Yung-Fu Yeh ,  Yuk-Tong Lee ,  Nai-Han Cheng

    IPC分类号： H01J37/244

    CPC分类号： H01J37/3171 ,  H01J37/243 ,  H01J37/304 ,  H01J2237/30472 ,  H01J2237/31703

    摘要： An apparatus for monitoring beam currents of an implanter is provided. The apparatus includes a beam-sensing unit for sensing the beam currents; a position-determining unit for determining scan positions; and a computing unit. The computing unit is configured to perform the functions of receiving the beam currents from the beam-sensing unit; receiving the scan positions from the position-determining unit; and determining a drift status of the implanter from the beam currents, wherein the computing unit is configured to receive the beam currents and the scan position periodically between a starting time and an ending time of a scan process of the implanter.

    摘要翻译： 提供一种用于监测注入机的束电流的装置。 该装置包括用于感测束电流的光束感测单元; 位置确定单元，用于确定扫描位置; 和计算单元。 所述计算单元被配置为执行从所述波束感测单元接收波束电流的功能; 从所述位置确定单元接收扫描位置; 以及从所述束电流确定所述注入器的漂移状态，其中所述计算单元被配置为在所述注入器的扫描处理的开始时间和结束时间之间周期性地接收所述波束电流和所述扫描位置。