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公开(公告)号：US08592785B2
公开(公告)日：2013-11-26
申请号：US13240951
申请日：2011-09-22
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , G21K5/00 , H01J3/14 , H01J37/05 , H01J37/147
摘要： An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.
摘要翻译： 公开了一种多离子束注入装置和方法。 示例性装置包括发射至少两个离子束的离子束源; 离子束分析仪; 和多离子束角度入射控制系统。 离子束分析仪和多离子束角入射控制系统被配置为将发射的至少两个离子束引导到晶片。
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2.发明申请MULTI-FACTOR ADVANCED PROCESS CONTROL METHOD AND SYSTEM FOR INTEGRATED CIRCUIT FABRICATION 有权用于集成电路制造的多因素高级过程控制方法和系统公开(公告)号：US20130110276A1
公开(公告)日：2013-05-02
申请号：US13286337
申请日：2011-11-01
CPC分类号： G06F17/5063 , G06F2217/10
摘要： A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.
摘要翻译： 公开了一种用于集成电路制造的方法和系统。 在一个示例中，该方法包括确定晶片的第一工艺参数和晶片的第二工艺参数，对应于不同晶片特性的第一工艺参数和第二工艺参数; 基于所述第一处理参数和所述第二处理参数确定所述晶片的设备参数的变化; 基于确定的晶片的器件参数的变化，构造作为第一工艺参数和第二工艺参数的函数的器件参数的模型; 并基于该模型执行制造过程。
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公开(公告)号：US20130075624A1
公开(公告)日：2013-03-28
申请号：US13241392
申请日：2011-09-23
IPC分类号： H01J3/26
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.
摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。
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公开(公告)号：US08766207B2
公开(公告)日：2014-07-01
申请号：US13241392
申请日：2011-09-23
IPC分类号： H01J37/244
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.
摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。
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公开(公告)号：US20130140987A1
公开(公告)日：2013-06-06
申请号：US13308614
申请日：2011-12-01
IPC分类号： H01J37/06
CPC分类号： H01J37/026 , H01J3/02 , H01J3/022 , H01J3/26 , H01J37/06 , H01J37/3171 , H01J2237/0041 , H01J2237/31705
摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。
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公开(公告)号：US20130068960A1
公开(公告)日：2013-03-21
申请号：US13235088
申请日：2011-09-16
CPC分类号： H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
摘要： An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
摘要翻译： 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号来确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。
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7.发明授权Ion beam dimension control for ion implantation process and apparatus, and advanced process control 有权离子束尺寸控制用于离子注入工艺和设备，以及先进的工艺控制公开(公告)号：US09070534B2
公开(公告)日：2015-06-30
申请号：US13463942
申请日：2012-05-04
IPC分类号： H01J37/317 , H01J37/147 , H01J37/08 , H01J37/30 , H01L21/265 , H01L21/67 , H01J37/302 , H01L21/687
CPC分类号： H01J37/3171 , H01J37/1474 , H01J37/20 , H01J37/3023 , H01J37/3172 , H01J2237/12 , H01J2237/20228 , H01J2237/30477 , H01J2237/30483 , H01L21/265 , H01L21/68764
摘要： A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.
摘要翻译： 提供了用于离子注入方法和装置的过程控制方法，以在衬底上产生高剂量区域，例如可以补偿所指出的不均匀性。 在离子注入工具中，分离的可控电极被设置为设置在离子束外部的多组相对的电极。 光束阻挡器可以定位到离子束中。 电极和光束阻挡器都是可控的，以减少入射到基板上的离子束的面积。 电极和光束阻挡器也改变入射在表面上的减小面积的离子束的位置。 衬底扫描通过离子束的速度可以在植入过程期间动态地改变，以在衬底中产生各种剂量浓度。
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8.发明授权Multi-factor advanced process control method and system for integrated circuit fabrication 有权多因素先进的集成电路制造过程控制方法和系统公开(公告)号：US09031684B2
公开(公告)日：2015-05-12
申请号：US13286337
申请日：2011-11-01
IPC分类号： G06F19/00 , G06F17/50 , H01L29/00 , H01L27/082 , H05K1/00
CPC分类号： G06F17/5063 , G06F2217/10
摘要： A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.
摘要翻译： 公开了一种用于集成电路制造的方法和系统。 在一个示例中，该方法包括确定晶片的第一工艺参数和晶片的第二工艺参数，对应于不同晶片特性的第一工艺参数和第二工艺参数; 基于所述第一处理参数和所述第二处理参数确定所述晶片的设备参数的变化; 基于确定的晶片的器件参数的变化，构造作为第一工艺参数和第二工艺参数的函数的器件参数的模型; 并基于该模型执行制造过程。
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公开(公告)号：US08922122B2
公开(公告)日：2014-12-30
申请号：US13308614
申请日：2011-12-01
IPC分类号： H01J7/24
CPC分类号： H01J37/026 , H01J3/02 , H01J3/022 , H01J3/26 , H01J37/06 , H01J37/3171 , H01J2237/0041 , H01J2237/31705
摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。
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公开(公告)号：US08581204B2
公开(公告)日：2013-11-12
申请号：US13235088
申请日：2011-09-16
IPC分类号： G01T1/16
CPC分类号： H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
摘要： An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
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