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17 条记录 (耗时 0.027 秒)

    Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results
    3.
    发明授权
    Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results 有权
    计量配方生成方法和系统，设计，模拟和计量结果的审查和分析

    公开(公告)号：US07207017B1

    公开(公告)日：2007-04-17

    申请号：US10865047

    申请日：2004-06-10

    申请人： Cyrus Tabery ,  Chris Haidinyak ,  Todd P. Lukanc ,  Luigi Capodieci ,  Carl P. Babcock ,  Hung-eil Kim ,  Christopher A. Spence

    发明人： Cyrus Tabery ,  Chris Haidinyak ,  Todd P. Lukanc ,  Luigi Capodieci ,  Carl P. Babcock ,  Hung-eil Kim ,  Christopher A. Spence

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081

    摘要： A method of generating a metrology recipe includes identifying regions of interest within a device layout. A coordinate list, which corresponds to the identified regions of interest, can be provided and used to create a clipped layout, which can be represented by a clipped layout data file. The clipped layout data file and corresponding coordinate list can be provided and converted into a metrology recipe for guiding one or more metrology instruments in testing a processed wafer and/or reticle. The experimental metrology results received in response to the metrology request can be linked to corresponding design data and simulation data and stored in a queriable database system.

    摘要翻译： 生成计量配方的方法包括识别设备布局内的感兴趣区域。 可以提供对应于所识别的感兴趣区域的坐标列表并用于创建剪切布局，其可以由剪切布局数据文件表示。 裁剪的布局数据文件和相应的坐标列表可以被提供并转换成用于在测试处理的晶片和/或掩模版时引导一个或多个计量仪器的计量配方。 根据测量要求收到的实验测量结果可以与相应的设计数据和仿真数据相关联，并存储在可数据库系统中。

    System and method for fabricating contact holes
    4.
    发明申请
    System and method for fabricating contact holes 有权
    制造接触孔的系统和方法

    公开(公告)号：US20050221233A1

    公开(公告)日：2005-10-06

    申请号：US10817193

    申请日：2004-04-02

    申请人： Anna Minvielle ,  Cyrus Tabery ,  Hung-eil Kim ,  Jongwook Kye

    发明人： Anna Minvielle ,  Cyrus Tabery ,  Hung-eil Kim ,  Jongwook Kye

    IPC分类号： G03F7/20 ,  G03F7/00

    CPC分类号： G03F7/70425 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70158

    摘要： A method of forming a plurality of contact holes of varying pitch and density in a contact layer of an integrated circuit device is provided. The plurality of contact holes can include a plurality of regularly spaced contact holes having a first pitch along a first direction and a plurality of semi-isolated contact holes having a second pitch along a second direction. A double-dipole illumination source can transmit light energy through a mask having a pattern corresponding to a desired contact hole pattern. The double-dipole illumination source can include a first dipole aperture, which is oriented and optimized for patterning the regularly spaced contact holes, and a second dipole aperture, which is oriented substantially orthogonal to the first dipole aperture and optimized for patterning the plurality of semi-isolated contact holes. The contact layer can be etched using the patterned photoresist layer.

    摘要翻译： 提供了一种在集成电路器件的接触层中形成多个具有不同间距和密度的接触孔的方法。 多个接触孔可以包括沿着第一方向具有第一间距的多个规则间隔的接触孔和沿第二方向具有第二间距的多个半隔离接触孔。 双偶极照明源可以通过具有对应于期望的接触孔图案的图案的掩模传输光能。 双偶极照明源可以包括第一偶极孔，其被定向和优化以用于图案化规则间隔的接触孔，以及第二偶极孔，其基本上垂直于第一偶极孔定向并且被优化用于图案化多个半 隔离接触孔。 可以使用图案化的光致抗蚀剂层来蚀刻接触层。

    Partially de-coupled core and periphery gate module process
    6.
    发明授权
    Partially de-coupled core and periphery gate module process 有权
    部分解耦核心和周边门模块工艺

    公开(公告)号：US06835662B1

    公开(公告)日：2004-12-28

    申请号：US10619797

    申请日：2003-07-14

    申请人： Jeff P. Erhardt ,  Hiroyuki Kinoshita ,  Cyrus Tabery

    发明人： Jeff P. Erhardt ,  Hiroyuki Kinoshita ,  Cyrus Tabery

    IPC分类号： H01L21302

    CPC分类号： H01L27/11568 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/1052 ,  H01L27/115

    摘要： The invention is an apparatus and a method of manufacturing a structure. The method includes the step of patterning a layer to include a line and space pattern. A space of the line and space pattern in a first region includes a first critical dimension less than achievable at a resolution limit of lithography. A line of the line and space pattern in a second region includes a second critical dimension achievable at a resolution limit of lithography. A sidewall spacer is formed on a line from a masking layer used in the formation of the structure. The method uses one critical masking step and two non-critical masking steps.

    摘要翻译： 本发明是一种制造结构的装置和方法。 该方法包括图案化层以包括线和空间图案的步骤。 在第一区域中的线和空间图案的空间包括在光刻的分辨率极限下小于可实现的第一临界尺寸。 第二区域中的线和空间图案的线包括在光刻的分辨率极限下可实现的第二临界尺寸。 在用于形成结构的掩模层的一条线上形成侧壁间隔物。 该方法使用一个关键的屏蔽步骤和两个非关键的屏蔽步骤。

    Semiconductor device with core and periphery regions
    7.
    发明授权
    Semiconductor device with core and periphery regions 有权
    具有核心和外围区域的半导体器件

    公开(公告)号：US06995437B1

    公开(公告)日：2006-02-07

    申请号：US10869774

    申请日：2004-06-16

    申请人： Hiroyuki Kinoshita ,  Yu Sun ,  Basab Banerjee ,  Christopher M. Foster ,  John R. Behnke ,  Cyrus Tabery

    发明人： Hiroyuki Kinoshita ,  Yu Sun ,  Basab Banerjee ,  Christopher M. Foster ,  John R. Behnke ,  Cyrus Tabery

    IPC分类号： H01L31/119

    CPC分类号： H01L27/105 ,  H01L27/11568 ,  H01L27/11573

    摘要： A method for forming a semiconductor device that includes a line and space pattern with variable pitch and critical dimensions in a layer on a substrate. The substrate includes a first region (e.g., a core region) and a second region (e.g., a periphery region). A first sub-line and space pattern in the first region comprises a space of a dimension (A) less than achievable by lithographic processes alone. Further, a second sub-line and space pattern in the second region comprises at least one line including a second critical dimension (B) achievable by lithography. The method uses two critical masking steps to form a hard mask that includes in the core region a critical dimension (A) less than achievable at a resolution limit of lithography. Further, the method uses a single etch step to transfer the pattern of the hard mask to the layer.

    摘要翻译： 一种用于形成半导体器件的方法，其包括在衬底上的层中具有可变节距和临界尺寸的线和间隔图案。 衬底包括第一区域（例如芯区域）和第二区域（例如，周边区域）。 第一区域中的第一子线和空间图案包括尺寸（A）的空间小于单独通过光刻工艺可实现的尺寸。 此外，第二区域中的第二子线和空间图案包括至少一条线，其包括通过光刻可实现的第二临界尺寸（B）。 该方法使用两个关键的掩模步骤来形成硬掩模，其在芯部区域中包括小于在光刻的分辨率极限下可实现的临界尺寸（A）。 此外，该方法使用单个蚀刻步骤将硬掩模的图案转移到该层。

    Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing
    9.
    发明授权
    Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing 有权
    保护电荷捕获电介质闪存器件免受BEOL处理中的紫外线引起的充电

    公开(公告)号：US07118967B1

    公开(公告)日：2006-10-10

    申请号：US10368696

    申请日：2003-02-19

    申请人： Minh V. Ngo ,  Ning Cheng ,  Jeff P. Erhardt ,  Clarence B. Ferguson ,  Cyrus Tabery ,  John Caffall ,  Tyagamohan Gottipati ,  Dawn Hopper

    发明人： Minh V. Ngo ,  Ning Cheng ,  Jeff P. Erhardt ,  Clarence B. Ferguson ,  Cyrus Tabery ,  John Caffall ,  Tyagamohan Gottipati ,  Dawn Hopper

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7923 ,  H01L29/66833 ,  Y10S438/954

    摘要： A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell including a charge trapping dielectric charge storage layer in a semiconductor device; and during processing steps subsequent to formation of the charge trapping dielectric charge storage layer, protecting the charge trapping dielectric flash memory cell from exposure to a level of UV radiation sufficient to deposit a non-erasable charge in the charge trapping dielectric flash memory cell. In one embodiment, the step of protecting is carried out by selecting processes in BEOL fabrication which do not include use, generation or exposure of the semiconductor device to a level of UV radiation sufficient to deposit the non-erasable charge.

    摘要翻译： 一种保护电荷捕获电介质闪存单元免受UV感应充电的方法，包括在半导体器件中制造包括电荷捕获介电电荷存储层的电荷捕获电介质闪存单元; 并且在形成电荷捕获介电电荷存储层之后的处理步骤期间，保护电荷捕获电介质闪速存储器单元暴露于足以在电荷俘获电介质闪存单元中沉积不可擦除电荷的UV辐射水平。 在一个实施例中，保护步骤是通过选择不包括半导体器件的使用，产生或曝光到足以沉积不可擦除电荷的紫外线辐射的水平的BEOL制造中的工艺进行的。