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公开(公告)号：US20220033317A1
公开(公告)日：2022-02-03
申请号：US17383541
申请日：2021-07-23
发明人： Koji Kobayashi , Takuma Tsubota , Hideyo Osanai , Daisuke Oya
摘要： There is provided an aluminum/ceramic bonding substrate having a ceramic substrate, an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate, an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate, and a plate-shaped reinforcing member which has a higher strength than that of the aluminum base plate and which is arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.
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公开(公告)号：US10651121B2
公开(公告)日：2020-05-12
申请号：US16385669
申请日：2019-04-16
发明人： Daisuke Oya , Satoshi Yokota
IPC分类号： H01L23/50 , H01L23/00 , H01L23/053 , H01L23/498 , H01R4/06 , H01L23/34 , H01R4/30 , H01R4/48 , H01R4/56 , H01R12/70
摘要： A semiconductor device includes a semiconductor chip, an electrode electrically connected to the semiconductor chip, the electrode including a looped portion, a cylindrical electrode including a main portion having a screw thread formed therein and a narrow portion continuous with the main portion, the narrow portion having a smaller width than the main portion, the cylindrical electrode being electrically connected to the electrode by the narrow portion being inserted into the looped portion, and a case for the semiconductor chip and the electrode, the case contacting the main portion while causing the screw thread and a connecting portion between the looped portion and the cylindrical electrode to be exposed.
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公开(公告)号：US10483176B2
公开(公告)日：2019-11-19
申请号：US15766112
申请日：2015-12-04
发明人： Daisuke Oya
IPC分类号： H01L23/10 , H01L25/07 , H01L23/373 , H01L23/04 , H01L23/053 , H01L23/24 , H01L25/18 , H01L23/367
摘要： Provided is a semiconductor module in which a case and a base plate joined together with a simple structure, the semiconductor module having high insulation strength. The semiconductor module includes the following: a base plate; at least one semiconductor chip disposed inside the base plate other than the outer periphery of the base plate and above the base plate; and a case joined to the outer periphery of the base plate with an adhesive, and containing the at least one semiconductor chip. The upper surface of the base plate is provided with a recess or a protrusion between an inner wall of the case and the at least one semiconductor chip in a plan view.
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公开(公告)号：USD790491S1
公开(公告)日：2017-06-27
申请号：US29558563
申请日：2016-03-18
设计人： Yukimasa Hayashida , Shinichi Iura , Hitoshi Uemura , Daisuke Oya , Kenji Hatori , Yasuhiro Sakai , Ryo Tsuda , Ryutaro Date
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公开(公告)号：US11887904B2
公开(公告)日：2024-01-30
申请号：US17602634
申请日：2019-07-11
发明人： Daisuke Oya
IPC分类号： H01L23/10 , H01L23/049 , H01L23/373 , H02P27/06 , H01L23/00 , H01L23/24
CPC分类号： H01L23/10 , H01L23/049 , H01L23/3735 , H01L23/24 , H01L24/73 , H02P27/06
摘要： It is an object to provide technology allowing for improvement in productivity of a semiconductor device. A semiconductor device includes: a base plate; an insulating substrate including a ceramic plate integrally bonded to an upper surface of the base plate with no solder layer therebetween and a circuit pattern disposed on an upper surface of the ceramic plate; a semiconductor element mounted on an upper surface of the circuit pattern; a case surrounding the insulating substrate and the semiconductor element over the base plate; an adhesive to adhere a lower portion of the case to an outer peripheral portion of the ceramic plate; and a sealant to seal the interior of the case, wherein the adhesive is in contact with an outer peripheral end of the ceramic plate to an outer peripheral end of the circuit pattern.
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公开(公告)号：US20210121943A1
公开(公告)日：2021-04-29
申请号：US17132708
申请日：2020-12-23
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
IPC分类号： B22C3/00 , B22D19/00 , B22D27/20 , H01L23/12 , B22D27/18 , H01L23/36 , H05K1/02 , H01L23/14 , H01L23/373
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
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公开(公告)号：US10340217B2
公开(公告)日：2019-07-02
申请号：US15797027
申请日：2017-10-30
发明人： Daisuke Oya , Satoshi Yokota
IPC分类号： H01L23/50 , H01L23/053 , H01L23/498 , H01L23/00 , H01R4/30 , H01R4/48 , H01R4/56 , H01R12/70 , H01R4/06
摘要： A semiconductor device includes a semiconductor chip, an electrode electrically connected to the semiconductor chip, the electrode including a looped portion, a cylindrical electrode including a main portion having a screw thread formed therein and a narrow portion continuous with the main portion, the narrow portion having a smaller width than the main portion, the cylindrical electrode being electrically connected to the electrode by the narrow portion being inserted into the looped portion, and a case for the semiconductor chip and the electrode, the case contacting the main portion while causing the screw thread and a connecting portion between the looped portion and the cylindrical electrode to be exposed.
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公开(公告)号：US11271043B2
公开(公告)日：2022-03-08
申请号：US16488752
申请日：2018-04-11
发明人： Shota Morisaki , Yoshiko Tamada , Junichi Nakashima , Daisuke Oya
IPC分类号： H01L27/30 , H01L27/108 , H02M7/48 , H01L29/739
摘要： An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.
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公开(公告)号：US10748830B2
公开(公告)日：2020-08-18
申请号：US16098901
申请日：2016-09-20
IPC分类号： H01L23/31 , H01L23/373 , H01L23/498 , H01L23/28 , H01L23/36 , H01L23/10 , H01L25/18 , H01L25/07 , H01L23/34 , H01L23/48 , H01L23/488 , H01L23/00 , H01L23/24 , H01L23/053
摘要： A wiring board (2) is provided on a heat radiation plate (1). A semiconductor chip (8) is provided on the wiring board (2). A case housing (10) is provided on the heat radiation plate (1) and surrounds the wiring board (2) and the semiconductor chip (8). Adhesive agent (11) bonds a lower surface of the case housing (10) and an upper surface peripheral portion of the heat radiation plate (1). A sealing material (13) is filled in the case housing (10) and covers the wiring board (2) and the semiconductor chip (8). A step portion (16,17) is provided to at least one of the lower surface of the case housing (10) and the upper surface peripheral portion of the heat radiation plate (1). A side surface of the heat radiation plate (1) and an outer side surface of the case housing (10) are flush with each other.
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公开(公告)号：US20190111467A1
公开(公告)日：2019-04-18
申请号：US16080163
申请日：2017-05-29
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
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