公开(公告)号：US20120012884A1

公开(公告)日：2012-01-19

申请号：US13165837

申请日：2011-06-22

申请人： Eiji MURAMOTO ,  Shinya NUNOUE

发明人： Eiji MURAMOTO ,  Shinya NUNOUE

IPC分类号： H01L33/62

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

摘要翻译： 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

公开(公告)号：US20120007047A1

公开(公告)日：2012-01-12

申请号：US13238818

申请日：2011-09-21

申请人： Eiji MURAMOTO ,  Shinya Nunoue

发明人： Eiji MURAMOTO ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/36 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20110284908A1

公开(公告)日：2011-11-24

申请号：US13195926

申请日：2011-08-02

申请人： Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

发明人： Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

IPC分类号： H01L33/60 ,  H01L33/36

CPC分类号： H01L33/38 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.

摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一电极，第二电极，第三电极和第四电极。 层叠结构体包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极电连接到第一半导体层。 第二电极与第二半导体层形成欧姆接触。 第二电极对于从发光层发射的光是半透明的。 第三电极穿过第二电极并与第二电极电连接以与第二半导体层形成肖特基接触。 第三电极设置在第四电极和第二半导体层之间。 沿第一半导体层，发光层和第二半导体层的堆叠方向观察的第四电极的形状与沿着层叠方向观察的第三电极的形状相同。

公开(公告)号：US20090321714A1

公开(公告)日：2009-12-31

申请号：US12408806

申请日：2009-03-23

申请人： Eiji MURAMOTO ,  Shinya Nunoue

发明人： Eiji MURAMOTO ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L29/66 ,  H01L21/28

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20120098014A1

公开(公告)日：2012-04-26

申请号：US13281305

申请日：2011-10-25

申请人： Eiji MURAMOTO

发明人： Eiji MURAMOTO

IPC分类号： H01L33/42

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer with a multi-layer structure including an active layer, and having a first surface and a second surface opposite to the first surface, a plurality of ITO pillars formed on the second surface of the semiconductor layer, the second surface being exposed partially, a metal layer formed on the second surface of the semiconductor layer, the metal layer filling a space between the adjacent ITO pillars and covers the ITO pillars, wherein the second surface of the semiconductor layer is exposed from the space between the adjacent ITO pillars, and the metal layer is formed on the exposed second surface.

摘要翻译： 根据一个实施例，半导体发光器件包括具有多层结构的半导体层，包括有源层，并且具有与第一表面相对的第一表面和第二表面，形成在第二表面上的多个ITO柱 半导体层的表面，第二表面部分曝光，形成在半导体层的第二表面上的金属层，金属层填充相邻ITO柱之间的空间并覆盖ITO柱，其中半导体的第二表面 层从相邻的ITO柱之间的空间露出，并且金属层形成在暴露的第二表面上。

公开(公告)号：US20110220928A1

公开(公告)日：2011-09-15

申请号：US12878978

申请日：2010-09-09

申请人： Eiji MURAMOTO

发明人： Eiji MURAMOTO

IPC分类号： H01L33/40 ,  H01L33/46

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting element includes a stacked body, a first and second electrode, a support substrate, a protective film and a dielectric film. The stacked body includes a first semiconductor, a second semiconductor layer and a light emitting portion. The first electrode is provided on a first major surface of the stacked body. The second electrode is provided on a second major surface of the stacked body. The support substrate is provided on the second major surface via a bonding metal. The protective film is provided on at least a side surface of the stacked body except the second major surface. The dielectric film is provided between the bonding metal and a region of the second major surface not provided with the second electrode, and between the bonding metal and a surface of the protective film on the second major surface side.

摘要翻译： 根据一个实施例，半导体发光元件包括层叠体，第一和第二电极，支撑衬底，保护膜和电介质膜。 层叠体包括第一半导体，第二半导体层和发光部。 第一电极设置在层叠体的第一主表面上。 第二电极设置在层叠体的第二主表面上。 支撑基板经由接合金属设置在第二主表面上。 除了第二主表面之外，保护膜设置在层叠体的至少一侧面上。 电介质膜设置在接合金属与未设置第二电极的第二主表面的区域之间以及在第二主表面侧的接合金属与保护膜的表面之间。