公开(公告)号：US20120012884A1

公开(公告)日：2012-01-19

申请号：US13165837

申请日：2011-06-22

Applicant: Eiji MURAMOTO ,  Shinya NUNOUE

Inventor： Eiji MURAMOTO ,  Shinya NUNOUE

IPC: H01L33/62

CPC classification number: H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

Abstract translation: 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

公开(公告)号：US20110284908A1

公开(公告)日：2011-11-24

申请号：US13195926

申请日：2011-08-02

Applicant: Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

Inventor： Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

IPC: H01L33/60 ,  H01L33/36

CPC classification number: H01L33/38 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.

Abstract translation: 根据一个实施例，半导体发光器件包括层叠结构体，第一电极，第二电极，第三电极和第四电极。 层叠结构体包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极电连接到第一半导体层。 第二电极与第二半导体层形成欧姆接触。 第二电极对于从发光层发射的光是半透明的。 第三电极穿过第二电极并与第二电极电连接以与第二半导体层形成肖特基接触。 第三电极设置在第四电极和第二半导体层之间。 沿第一半导体层，发光层和第二半导体层的堆叠方向观察的第四电极的形状与沿着层叠方向观察的第三电极的形状相同。

公开(公告)号：US20130087805A1

公开(公告)日：2013-04-11

申请号：US13404531

申请日：2012-02-24

Applicant: Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

Inventor： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

IPC: H01L29/20

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

公开(公告)号：US20120138896A1

公开(公告)日：2012-06-07

申请号：US13398239

申请日：2012-02-16

Applicant: Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

Inventor： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC: H01L33/04

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

公开(公告)号：US20110204411A1

公开(公告)日：2011-08-25

申请号：US12875560

申请日：2010-09-03

Applicant: Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

Inventor： Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC: H01L33/32 ,  H01L33/30

CPC classification number: H01L33/24 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

Abstract: According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x

Abstract translation: 根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。 主表面配有凹凸。 该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。 缓冲层包括GaxAl1-xN（0.1＆nlE; x <0.5），并且具有不小于20纳米且不大于50纳米的厚度。 此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。

公开(公告)号：US20110147776A1

公开(公告)日：2011-06-23

申请号：US12874839

申请日：2010-09-02

Applicant: Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

Inventor： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

IPC: H01L33/58

CPC classification number: H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

Abstract translation: 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

公开(公告)号：US20130229106A1

公开(公告)日：2013-09-05

申请号：US13601433

申请日：2012-08-31

Applicant: Iwao MITSUISHI ,  Naotoshi MATSUDA ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Aoi OKADA ,  Masahiro KATO ,  Ryosuke HIRAMATSU ,  Yasushi HATTORI ,  Shinya NUNOUE

Inventor： Iwao MITSUISHI ,  Naotoshi MATSUDA ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Aoi OKADA ,  Masahiro KATO ,  Ryosuke HIRAMATSU ,  Yasushi HATTORI ,  Shinya NUNOUE

IPC: C09K11/77 ,  H05B33/12

CPC classification number: C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05B33/12 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd  formula 1 wherein x, a, b, c and d satisfy following condition: 0

Abstract translation: 根据一个实施例，当在具有250至520nm的波长范围内的发射峰的光激发时，发光材料发射具有在550至590nm的波长范围内的发光峰的光。 发光材料具有由下式1表示的组成。（Sr1-xEux）aSibAlOcNdformula 1其中x，a，b，c和d满足以下条件：0

公开(公告)号：US20120146045A1

公开(公告)日：2012-06-14

申请号：US13212539

申请日：2011-08-18

Applicant: Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

Inventor： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

IPC: H01L33/32

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

Abstract translation: 根据一个实施例，半导体发光器件包括发光层，透光层和第一半导体层。 透光层相对于从发光层发射的光是可透射的。 第一半导体层与发光层和透光层之间的透光层接触。 透光层的热膨胀系数大于透光层的热膨胀系数，其晶格常数小于有源层的晶格常数，并且在面内方向具有拉伸应力。

公开(公告)号：US20120043573A1

公开(公告)日：2012-02-23

申请号：US13214410

申请日：2011-08-22

Applicant: Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

Inventor： Iwao MITSUISHI ,  Yumi FUKUDA ,  Aoi OKADA ,  Naotoshi MATSUDA ,  Shinya NUNOUE ,  Keiko ALBESSARD ,  Masahiro KATO

IPC: H01L33/50 ,  H01L33/56

CPC classification number: H01L33/504 ,  C09K11/0883 ,  C09K11/7734 ,  H01L24/45 ,  H01L25/0753 ,  H01L33/507 ,  H01L33/54 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the following equation (1) and an average particle diameter of 12 μm or more. (M1−x1Eux1)3−ySi13−zAl3+zO2+uN21−w  (1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements. x1, y, z, u, and w satisfy the following relationship. 0

Abstract translation: 根据一个实施例的发光器件包括发射波长为250nm至500nm的光的发光元件和设置在发光元件上的荧光层。 荧光层包括具有由下式（1）表示的组成和平均粒径为12μm以上的荧光体。 （M1-x1Eux1）3-ySi13-zAl3 + zO2 + uN21-w（1）（在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，IIIB族元素 除了Al，稀土元素和IVB族元素，x1，y，z，u和w满足以下关系：0

公开(公告)号：US20110101851A1

公开(公告)日：2011-05-05

申请号：US12985955

申请日：2011-01-06

Applicant: Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

Inventor： Iwao MITSUISHI ,  Shinya NUNOUE ,  Yasushi HATTORI

IPC: H01J1/62

CPC classification number: H01L33/504 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00

Abstract: A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

Abstract translation: 提供了一种发光器件，其包括具有第一部分和围绕其的第二部分的封装，安装在第一部分上并发射在近紫外区域具有发射峰的光的半导体发光元件， 覆盖半导体发光元件并与封装物接触的透明树脂层和形成在透明树脂层上的层叠体，层叠体的端面与第二部分接触。 透明树脂层具有拱形外形垂直横截面。 层叠体具有垂直截面的拱形外部轮廓，并且包括以上述顺序层压的红色荧光层，黄色荧光层，绿色荧光层和蓝色荧光体层。 黄色荧光层具有比其端面部分的厚度大的顶部。