公开(公告)号：US20210180192A1

公开(公告)日：2021-06-17

申请号：US17183449

申请日：2021-02-24

Applicant: FUJIFILM Corporation

Inventor： Nobuaki SUGIMURA ,  Tomonori TAKAHASHI ,  Hiroyuki SEKI

IPC: C23F1/26

Abstract: The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42−, NO3−, PO43−, and BO33−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.

公开(公告)号：US20130189627A1

公开(公告)日：2013-07-25

申请号：US13796984

申请日：2013-03-12

Applicant: FUJIFILM CORPORATION

Inventor： Keiji YAMAMOTO ,  Hiroyuki SEKI

IPC: G03F7/075 ,  G03F7/16

CPC classification number: H01L21/308 ,  C08K5/04 ,  C09D183/04 ,  G03F7/0757 ,  G03F7/168 ,  G03F7/40 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0337 ,  C08L83/04 ,  C08K5/05 ,  C08K5/06

Abstract: A gap embedding composition used for embedding a patterned gap formed between photosensitive resin film portions on a semiconductor substrate surface, the gap embedding composition, having a hydrolysis condensate having an average molecular weight of 3,000 to 50,000 derived from an alkoxysilane raw material including at least alkyltrialkoxysilane and an ether compound having a total carbon atom of from 7 to 9 and/or an alkyl alcohol compound having a total carbon atom of from 6 to 9, as a solvent.

Abstract translation: 一种间隙嵌入组合物，用于将形成在感光性树脂膜部分之间的图案化间隙嵌入到半导体衬底表面上，该间隙包埋组合物具有平均分子量为3,000至50,000的水解缩合物，其衍生自至少包括烷基三烷氧基硅烷的烷氧基硅烷原料 和总碳原子数为7〜9的醚化合物和/或总碳原子数为6〜9的烷基醇化合物作为溶剂。

公开(公告)号：US20210189235A1

公开(公告)日：2021-06-24

申请号：US17192391

申请日：2021-03-04

Applicant: FUJIFILM Corporation

Inventor： Nobuaki SUGIMURA ,  Tomonori TAKAHASHI ,  Hiroyuki SEKI

IPC: C09K13/06 ,  H01L21/3213

Abstract: The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate.
The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3− and Cl−. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two kinds of the specific anions, a content of each of two kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.

公开(公告)号：US20150252311A1

公开(公告)日：2015-09-10

申请号：US14717437

申请日：2015-05-20

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI ,  Atsushi MIZUTANI ,  Hiroyuki SEKI ,  Hideo FUSHIMI ,  Tomoo KATO

IPC: C11D11/00 ,  H01L21/02 ,  C11D7/26 ,  H01L21/3213 ,  C11D7/34 ,  C11D7/32

CPC classification number: G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract translation: 提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物， 和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。

公开(公告)号：US20140322914A1

公开(公告)日：2014-10-30

申请号：US14328623

申请日：2014-07-10

Applicant: FUJIFILM CORPORATION

Inventor： Keiji YAMAMOTO ,  Hiroyuki SEKI

IPC: H01L21/308

CPC classification number: H01L21/308 ,  C08K5/04 ,  C09D183/04 ,  G03F7/0757 ,  G03F7/168 ,  G03F7/40 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0337 ,  C08L83/04 ,  C08K5/05 ,  C08K5/06

Abstract: A gap embedding composition used for embedding a patterned gap formed between photosensitive resin film portions on a semiconductor substrate surface, the gap embedding composition, having a hydrolysis condensate having an average molecular weight of 3,000 to 50,000 derived from an alkoxysilane raw material including at least alkyltrialkoxysilane and an ether compound having a total carbon atom of from 7 to 9 and/or an alkyl alcohol compound having a total carbon atom of from 6 to 9, as a solvent.

Abstract translation: 一种间隙嵌入组合物，用于将形成在感光性树脂膜部分之间的图案化间隙嵌入到半导体衬底表面上，该间隙包埋组合物具有平均分子量为3,000至50,000的水解缩合物，其衍生自至少包括烷基三烷氧基硅烷的烷氧基硅烷原料 和总碳原子数为7〜9的醚化合物和/或总碳原子数为6〜9的烷基醇化合物作为溶剂。