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公开(公告)号：US20240114797A1
公开(公告)日：2024-04-04
申请号：US18454073
申请日：2023-08-23
Applicant: FUJIFILM CORPORATION
Inventor： Hiroyuki KOBAYASHI , Seigo NAKAMURA , Shinya SUGIMOTO , Tsutomu SASAKI
IPC: H10N30/50 , H10N30/20 , H10N30/80 , H10N30/853
CPC classification number: H10N30/50 , H10N30/206 , H10N30/802 , H10N30/8554
Abstract: A piezoelectric element includes a substrate, a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode, in which both the first piezoelectric film and the second piezoelectric film have spontaneous polarizations aligned in a film thickness direction and directions of the spontaneous polarizations are the same, and in a case where in a hysteresis curve of one piezoelectric film, a coercive voltage Vcf+, a coercive voltage Vcf−, |Vcf+−Vcf−|=ΔVcf, and the larger of an absolute value of Vcf+ and an absolute value of Vcf− is denoted by Vcf, and in a hysteresis curve of the other piezoelectric film, a coercive voltage Vcr+, a coercive voltage Vcr−, |Vcr+−Vcr−|=ΔVcr, and the larger of an absolute value of Vcr+ and an absolute value Vcr− is denoted by Vcr, ΔVcr
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公开(公告)号：US20240114796A1
公开(公告)日：2024-04-04
申请号：US18454072
申请日：2023-08-23
Applicant: FUJIFILM CORPORATION
Inventor： Seigo NAKAMURA , Hiroyuki KOBAYASHI , Shinya SUGIMOTO , Tsutomu SASAKI
IPC: H10N30/50 , H10N30/20 , H10N30/80 , H10N30/853
CPC classification number: H10N30/50 , H10N30/206 , H10N30/802 , H10N30/8554
Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain a perovskite-type oxide containing Pb Zr, Ti, and M, as a main component, Pb composition ratios in the perovskite-type oxides contained in the first piezoelectric film and the second piezoelectric film are different from each other, and polarization-electric field hysteresis measured for the first piezoelectric film with the first electrode grounded and the second electrode as a drive electrode, and polarization-electric field hysteresis measured for the second piezoelectric film with the second electrode grounded and the third electrode as a drive electrode are shifted in the same electric field direction with respect to origins thereof.
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公开(公告)号：US20170315222A1
公开(公告)日：2017-11-02
申请号：US15648682
申请日：2017-07-13
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Yoshihisa USAMI
CPC classification number: G01S13/42 , A61B5/107 , G01R29/08 , H01L51/107 , H01L51/448 , H01L51/5253 , H04L5/0035 , H04L5/0048 , H04L5/0073 , H04L27/2655 , H05B33/04 , Y02E10/549
Abstract: After an electroconductive projection is formed on an electrode of an electronic element, a gas barrier film on which an adhesive layer and a contact hole are formed is laminated and pressure-bonded onto a substrate on which the electronic element is formed. Alternatively, after a gas barrier film on which an adhesive layer and a contact hole are formed is laminated on a substrate on which an electronic element is formed and an electroconductive projection is formed on the electrode inside the contact hole, the substrate and the gas barrier film are pressure-bonded to each other, and the contact hole is filled with an electroconductive material. In this manner, there are provided a method of manufacturing an electronic device; and an electronic device to which a take-out wire used to reliably connect the electronic device to an external device using a small contact hole can be connected even in a case where the electronic device is small.
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公开(公告)号：US20240023453A1
公开(公告)日：2024-01-18
申请号：US18472170
申请日：2023-09-21
Applicant: FUJIFILM CORPORATION
Inventor： Fumihiko MOCHIZUKI , Seigo NAKAMURA , Hiroyuki KOBAYASHI
CPC classification number: H10N30/877 , H10N30/06
Abstract: The piezoelectric element is a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide as a main component, and an upper electrode layer, in which at least a region of the upper electrode layer closest to a side of the piezoelectric film is composed of an oxide conductive layer containing In, and regarding an interface region between the piezoelectric film and the oxide conductive layer of the upper electrode layer, in an intensity profile of binding energy, which is acquired by an X-ray photoelectron spectroscopy measurement, a peak intensity ratio γ/α satisfies γ/α≤0.25, wherein a is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to oxygen, and γ is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to an OH group.
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5.发明申请公开(公告)号：US20200002804A1
公开(公告)日：2020-01-02
申请号：US16568905
申请日：2019-09-12
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Kenichi UMEDA , Yuichiro ITAI , Shinichiro SONODA
Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.
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Patent Agency Ranking
公开(公告)号：US20170155067A1
公开(公告)日：2017-06-01
申请号：US15430629
申请日：2017-02-13
Applicant: FUJIFILM CORPORATION
Inventor： Yoshihisa USAMI , Kouki TAKAHASHI , Yoshiki MAEHARA , Seigo NAKAMURA
IPC: H01L51/05 , B23K26/351
CPC classification number: H01L51/0512 , B23K26/0006 , B23K26/066 , B23K26/082 , B23K26/351 , B23K26/359 , B23K26/364 , B23K26/402 , B23K2101/42 , B23K2103/50 , H01L51/0014 , H01L51/0024 , H01L51/0558
Abstract: Disclosed are a manufacturing method capable of manufacturing a semiconductor device having a plurality of organic semiconductor elements with a simple process and high productivity, and a semiconductor device. This problem is solved by forming, on an insulating substrate, electrodes corresponding to a plurality of semiconductor elements, in which the position of an uppermost portion of each of a source electrode and a drain electrode is higher than that of a gate electrode, forming an organic semiconductor film on a surface of an insulating support, forming grooves in the organic semiconductor film to form divided regions according to the individual semiconductor elements, and aligning and laminating the insulating support and the insulating substrate.
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公开(公告)号：US20240023454A1
公开(公告)日：2024-01-18
申请号：US18472168
申请日：2023-09-21
Applicant: FUJIFILM CORPORATION
Inventor： Hiroyuki KOBAYASHI , Seigo NAKAMURA , Fumihiko MOCHIZUKI , Hideaki TANAKA , Kenichiro INOUE , Yasushi TOYOSHIMA
IPC: H10N30/87 , C23C14/08 , C23C14/34 , H10N30/853 , H10N30/06
CPC classification number: H10N30/878 , C23C14/08 , C23C14/34 , H10N30/8554 , H10N30/06
Abstract: In a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film, and an upper electrode layer, the upper electrode layer includes an oxide conductive layer, has an interface layer containing a constituent element of the oxide conductive layer and an OH group, between the piezoelectric film and the oxide conductive layer of the upper electrode layer, where the interface layer has an amorphous structure and has a thickness of 1 nm or more and 5 nm or less, and in a case where a peak intensity of binding energy derived from a 1s orbital of oxygen bonded to a metal is denoted as α, and a peak intensity of binding energy derived from a 1s orbital of oxygen constituting the OH group is denoted as γ, a peak intensity ratio γ/α is 0.35 or more.
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8.发明公开公开(公告)号：US20230416108A1
公开(公告)日：2023-12-28
申请号：US18464273
申请日：2023-09-11
Applicant: FUJIFILM CORPORATION
Inventor： Seigo NAKAMURA , Hiroyuki KOBAYASHI
IPC: C01G33/00 , H10N30/853 , H10N30/076 , C23C14/34 , C23C14/08
CPC classification number: C01G33/006 , H10N30/8554 , H10N30/076 , C23C14/345 , C23C14/088 , C01P2002/34 , C01P2006/40 , C01P2002/50 , C01P2002/72
Abstract: The piezoelectric film is a piezoelectric film containing a perovskite-type oxide as a main component, in which a current-voltage profile showing a relationship between a voltage and a current that flows in a case where the voltage is applied has two maximal values, where the current-voltage profile is acquired in a case where the voltage is sweep-applied from −40 V to +40 V at a first change rate of 10 kV/cm·sec while the piezoelectric film is sandwiched between a pair of electrode layers.
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公开(公告)号：US20230301193A1
公开(公告)日：2023-09-21
申请号：US18184045
申请日：2023-03-15
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA
IPC: H10N30/853 , C01G25/00
CPC classification number: H10N30/8554 , C01G25/006 , C01P2002/54 , C01P2006/40 , C01P2002/34 , C01P2002/76 , C01P2002/72
Abstract: There are provided a piezoelectric laminate, which include, on a substrate in the following order, a lower electrode layer and a piezoelectric film, in which the piezoelectric film contains a perovskite-type oxide, the piezoelectric film includes a first region in which the perovskite-type oxide contains, as a main component, a first perovskite crystal in which a first angle formed by a (100) plane orientation or a (001) plane orientation and a normal direction of a surface of the substrate is 5°˜30°, and includes a second region provided between the first region and the lower electrode layer, in which the perovskite-type oxide contains, as a main component, a second perovskite crystal in which a second angle formed by the (100) plane orientation or the (001) plane orientation and the normal direction is less than 5°, and a thickness of the second region is 30 nm or more.
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公开(公告)号：US20200209433A1
公开(公告)日：2020-07-02
申请号：US16799782
申请日：2020-02-24
Applicant: FUJIFILM Corporation
Inventor： Kenichi UMEDA , Yuichiro ITAI , Seigo NAKAMURA
Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10−20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.
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