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Patent Agency Ranking
公开(公告)号：US08785232B2
公开(公告)日：2014-07-22
申请号：US13945583
申请日：2013-07-18
Applicant: First Solar, Inc.
Inventor： Gang Xiong , Rick C. Powell , Aaron Roggelin , Kuntal Kumar , Arnold Allenic , Kenneth M. Ring , Charles E. Wickersham
IPC: H01L21/00
CPC classification number: H01L31/02963 , H01L31/073 , Y02E10/543 , Y02P70/521
Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.
Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。
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公开(公告)号：US20130298992A1
公开(公告)日：2013-11-14
申请号：US13945583
申请日：2013-07-18
Applicant: First Solar, Inc.
Inventor： Gang Xiong , Rick C. Powell , Aaron Roggelin , Kuntal Kumar , Arnold Allenic , Kenneth M. Ring , Charles E. Wickersham
IPC: H01L31/0296
CPC classification number: H01L31/02963 , H01L31/073 , Y02E10/543 , Y02P70/521
Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.
Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。
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3.发明申请METHOD AND SYSTEM OF PROVIDING DOPANT CONCENTRATION CONTROL IN DIFFERENT LAYERS OF A SEMICONDUCTOR DEVICE 审中-公开在半导体器件的不同层中提供掺杂浓度控制的方法和系统公开(公告)号：US20150171258A1
公开(公告)日：2015-06-18
申请号：US14625649
申请日：2015-02-19
Applicant: First Solar, Inc.
Inventor： Arnold Allenic , John Barden , Feng Liao , Xilin Peng , Rick C. Powell , Kenneth M. Ring , Gang Xiong
IPC: H01L31/18 , C23C16/455 , H01J37/34 , C23C16/48 , C23C16/448 , C23C16/28 , C23C16/52 , C23C16/40
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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4.发明授权Method and system of providing dopant concentration control in different layers of a semiconductor device 有权在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统公开(公告)号：US09006020B2
公开(公告)日：2015-04-14
申请号：US13739183
申请日：2013-01-11
Applicant: First Solar, Inc.
Inventor： Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
IPC: H01L31/18 , H01L21/02 , H01L31/0296 , H01L31/073
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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公开(公告)号：US20130183794A1
公开(公告)日：2013-07-18
申请号：US13739183
申请日：2013-01-11
Applicant: First Solar, Inc.
Inventor： Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
IPC: H01L31/18
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
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