公开(公告)号：US20130327391A1

公开(公告)日：2013-12-12

申请号：US13899153

申请日：2013-05-21

Applicant: FIRST SOLAR, INC

Inventor： Markus Gloeckler ,  Akhlesh Gupta ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0216 ,  H01L21/02

CPC classification number: H01L31/1864 ,  H01L21/02474 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02672 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0296 ,  H01L31/073

Abstract: A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract translation: 一种用于制造和光伏器件的方法，其包括具有卤化物热处理表面的半导体层，其增加至少一个半导体层内的晶粒生长并改善半导体层之间的界面。 卤化物热处理包括在与半导体层相邻或部分的表面上施加和加热卤化物的多个涂层。

公开(公告)号：US20170054052A1

公开(公告)日：2017-02-23

申请号：US15342533

申请日：2016-11-03

Applicant: FIRST SOLAR, INC

Inventor： Markus Gloeckler ,  Akhlesh Gupta ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/1864 ,  H01L21/02474 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02672 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0296 ,  H01L31/073

Abstract: A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract translation: 一种制造用于制造光伏器件的方法，包括具有卤化物热处理表面的半导体层，其增加至少一个半导体层内的晶粒生长并改善半导体层之间的界面。 卤化物热处理包括在邻近或部分半导体层的表面上施加和加热卤化物的多个涂层。

公开(公告)号：US20130180579A1

公开(公告)日：2013-07-18

申请号：US13743440

申请日：2013-01-17

Applicant: FIRST SOLAR, INC

Inventor： Changming Jin ,  Xilin Peng ,  Rick C. Powell ,  Aaron Roggelin ,  Gang Xiong

IPC: H01L31/075 ,  H01L31/18

CPC classification number: H01L31/075 ,  H01L31/073 ,  H01L31/1828 ,  Y02E10/543

Abstract: A photovoltaic device having an absorber multilayer and methods of manufacturing the same are described. The absorber multilayer, which is formed adjacent to a window layer, may include a doped first cadmium telluride layer which contains a first dopant and an intrinsic second cadmium telluride layer. The absorber multilayer may further include at least a third cadmium telluride layer formed adjacent to a back contact. The at least third cadmium telluride layer may include doped or intrinsic cadmium telluride.

Abstract translation: 描述了具有吸收体多层的光电器件及其制造方法。 与窗口层相邻形成的吸收体多层可以包括掺杂的第一碲化镉层，其含有第一掺杂剂和本征的第二碲化镉层。 吸收体多层可以进一步包括至少一个邻近背面接触形成的第三碲化镉层。 至少第三碲化镉层可以包括掺杂或固有的碲化镉。

公开(公告)号：US09799784B2

公开(公告)日：2017-10-24

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

公开(公告)号：US20150171258A1

公开(公告)日：2015-06-18

申请号：US14625649

申请日：2015-02-19

Applicant: First Solar, Inc.

Inventor： Arnold Allenic ,  John Barden ,  Feng Liao ,  Xilin Peng ,  Rick C. Powell ,  Kenneth M. Ring ,  Gang Xiong

IPC: H01L31/18 ,  C23C16/455 ,  H01J37/34 ,  C23C16/48 ,  C23C16/448 ,  C23C16/28 ,  C23C16/52 ,  C23C16/40

CPC classification number: H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。

公开(公告)号：US09006020B2

公开(公告)日：2015-04-14

申请号：US13739183

申请日：2013-01-11

Applicant: First Solar, Inc.

Inventor： Gang Xiong ,  Rick C. Powell ,  Xilin Peng ,  John Barden ,  Arnold Allenic ,  Feng Liao ,  Kenneth M. Ring

IPC: H01L31/18 ,  H01L21/02 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。

公开(公告)号：US20140261688A1

公开(公告)日：2014-09-18

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.

Abstract translation: 公开了包含至少一种硫镉碲化镉（CdSxTe1-x）层的光伏器件，以及形成这种光伏器件的方法。

公开(公告)号：US20130183794A1

公开(公告)日：2013-07-18

申请号：US13739183

申请日：2013-01-11

Applicant: First Solar, Inc.

Inventor： Gang Xiong ,  Rick C. Powell ,  Xilin Peng ,  John Barden ,  Arnold Allenic ,  Feng Liao ,  Kenneth M. Ring

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/407 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/483 ,  C23C16/52 ,  H01J37/3476 ,  H01J2237/332 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/02963 ,  H01L31/073 ,  Y02E10/543

Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.