公开(公告)号：US09595524B2

公开(公告)日：2017-03-14

申请号：US14561632

申请日：2014-12-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brent A. Anderson ,  Nicolas Breil ,  Christian Lavoie

IPC: H01L21/4763 ,  H01L27/088 ,  H01L21/285 ,  H01L21/3213 ,  H01L29/78 ,  H01L29/66 ,  H01L29/45 ,  H01L29/08 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L29/165

CPC classification number: H01L27/0886 ,  H01L21/28518 ,  H01L21/28531 ,  H01L21/32133 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/456 ,  H01L29/66795 ,  H01L29/785

Abstract: A method includes conducting a laser-based anneal treatment on a metal layer positioned above and in direct contact with a top portion of a silicon cap layer located in direct contact with a first diamond shaped epitaxial layer surrounding a first fin and a second diamond shaped epitaxial layer surrounding a second fin. The metal layer extends from the top portion of the silicon cap layer in direct contact with the first diamond shaped epitaxial layer to the top portion of the silicon cap layer in direct contact with the second diamond shaped epitaxial layer. The conducted laser-based anneal treatment forms a silicide layer, a portion of the silicide layer between the first and the second diamond shaped epitaxial layers is substantially thicker than a portion of the silicide layer in contact with the first and the second diamond shaped epitaxial layers.

Abstract translation: 一种方法包括对位于与包围第一鳍片的第一菱形外延层直接接触的硅帽层顶部直接接触的金属层上进行基于激光的退火处理，第二菱形外延 围绕第二鳍的层。 金属层从第一金刚石外延层的直接接触的硅帽层的顶部延伸到硅帽层的顶部，与第二菱形外延层直接接触。 所进行的基于激光的退火处理形成硅化物层，第一和第二菱形外延层之间的硅化物层的一部分基本上比与第一和第二菱形外延层接触的硅化物层的部分厚 。

公开(公告)号：US09543167B2

公开(公告)日：2017-01-10

申请号：US14331267

申请日：2014-07-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Brent A. Anderson ,  Nicolas Breil ,  Christian Lavoie

IPC: H01L21/268 ,  H01L21/324 ,  H01L29/04 ,  H01L29/16 ,  H01L29/08 ,  H01L29/45 ,  H01L21/285 ,  H01L21/321 ,  H01L21/8234

CPC classification number: H01L21/324 ,  H01L21/268 ,  H01L21/28518 ,  H01L21/28531 ,  H01L21/321 ,  H01L21/823425 ,  H01L21/823431 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/456

Abstract: A method includes conducting a laser-based anneal treatment on a metal layer positioned above and in direct contact with a first diamond shaped epitaxial layer surrounding a first fin and a second diamond shaped epitaxial layer surrounding a second fin, the metal layer extends from the first diamond shaped epitaxial layer to the second diamond shaped epitaxial layer, the laser-based anneal treatment forms a silicide layer, a portion of the silicide layer between the first and the second diamond shaped epitaxial layers is substantially thicker than a portion of the silicide layer in contact with the first and the second diamond shaped epitaxial layers, and the silicide layer takes on a crystal orientation of the first and the second epitaxial layers.

Abstract translation: 一种方法包括对围绕第一鳍片的第一菱形外延层和围绕第二鳍片的第二菱形外延层直接接触的金属层进行基于激光的退火处理，金属层从第一 金刚石外延层到第二菱形外延层，基于激光的退火处理形成硅化物层，第一和第二菱形外延层之间的硅化物层的一部分基本上比硅化物层的一部分厚 与第一和第二菱形外延层接触，硅化物层承受第一和第二外延层的晶体取向。

公开(公告)号：US20160358860A1

公开(公告)日：2016-12-08

申请号：US14729298

申请日：2015-06-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238

Abstract: An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.

Abstract translation: 本发明的一个方面包括在半导体衬底上的电介质层中形成接触的方法。 该方法可以包括：在半导体衬底上的电介质层中形成接触开口以暴露半导体衬底的上部; 沉积第一衬里层以共形地涂覆所述接触开口; 导致第一衬里层的一部分扩散到半导体衬底的上部，以在半导体衬底的上部形成第一混合区; 在第一混合区域上沉积难熔金属层; 以及在接触开口中沉积金属从而形成接触。

公开(公告)号：US20160118298A1

公开(公告)日：2016-04-28

申请号：US14992669

申请日：2016-01-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L21/768 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L21/76886 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/092 ,  H01L29/41766 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.

公开(公告)号：US10707167B2

公开(公告)日：2020-07-07

申请号：US15826939

申请日：2017-11-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L21/285

Abstract: An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.

公开(公告)号：US09379012B2

公开(公告)日：2016-06-28

申请号：US14992669

申请日：2016-01-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L29/78 ,  H01L23/535 ,  H01L29/423 ,  H01L29/417 ,  H01L21/285 ,  H01L27/092 ,  H01L21/768 ,  H01L29/66

CPC classification number: H01L21/76886 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/092 ,  H01L29/41766 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.

公开(公告)号：US09373696B2

公开(公告)日：2016-06-21

申请号：US14617314

申请日：2015-02-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christian Lavoie ,  Dong-Ick Lee ,  Ahmet S. Ozcan ,  Zhen Zhang

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/285 ,  H01L21/02 ,  H01L21/24 ,  H01L21/3213 ,  H01L21/324 ,  H01L29/161

CPC classification number: H01L29/665 ,  H01L21/02381 ,  H01L21/02631 ,  H01L21/244 ,  H01L21/28518 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/161

Abstract: In one aspect, a method of fabricating a metal silicide includes the following steps. A semiconductor material selected from the group consisting of silicon and silicon germanium is provided. A metal(s) is deposited on the semiconductor material. A first anneal is performed at a temperature and for a duration sufficient to react the metal(s) with the semiconductor material to form an amorphous layer including an alloy formed from the metal(s) and the semiconductor material, wherein the temperature at which the first anneal is performed is below a temperature at which a crystalline phase of the alloy is formed. An etch is used to selectively remove unreacted portions of the metal(s). A second anneal is performed at a temperature and for a duration sufficient to crystallize the alloy thus forming the metal silicide. A device contact and a method of fabricating a FET device are also provided.

公开(公告)号：US09865546B2

公开(公告)日：2018-01-09

申请号：US14729298

申请日：2015-06-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238

Abstract: An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.

公开(公告)号：US09236345B2

公开(公告)日：2016-01-12

申请号：US14223592

申请日：2014-03-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L29/78 ,  H01L23/532 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/417 ,  H01L21/285

CPC classification number: H01L21/76886 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/092 ,  H01L29/41766 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.

Abstract translation: 接触开口形成为露出半导体衬底的表面部分的电介质材料。 然后在每个接触开口中和界面氧化物层的暴露表面部分上形成界面氧化物层。 在每个开口内和每个界面氧化物层的暴露的表面部分上形成NiPt合金层。 然后进行退火，其形成从底部到顶部具有倒金字塔形状，富Pt硅化物帽区域和富氧区域的二硅化镍合金体的接触结构。 然后在每个接触开口内和每个接触结构的富氧区顶上形成金属接触。

公开(公告)号：US20180090447A1

公开(公告)日：2018-03-29

申请号：US15826939

申请日：2017-11-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L21/285

CPC classification number: H01L23/53266 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238

Abstract: An aspect of the invention includes a method for forming a contact in a dielectric layer over a semiconductor substrate. The method may comprise: forming a contact opening in a dielectric layer over the semiconductor substrate to expose an upper portion of the semiconductor substrate; depositing a first liner layer to conformally coat the contact opening; causing a portion of the first liner layer to diffuse into the upper portion of the semiconductor substrate to form a first intermix region at the upper portion of the semiconductor substrate; depositing a refractory metal layer over the first intermix region; and depositing a metal in the contact opening thereby forming the contact.