公开(公告)号：US10056453B2

公开(公告)日：2018-08-21

申请号：US15217643

申请日：2016-07-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey Poovannummoottil Jacob ,  Srinivasa R. Banna ,  Deepak K. Nayak ,  Bartlomiej J. Pawlak

IPC: H01L29/06 ,  H01L23/00 ,  H01L29/20 ,  H01L29/16 ,  H01L29/267 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01L29/0657 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3083 ,  H01L23/562 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/267

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to semiconductor wafers with reduced bowing and warping and methods of manufacture. The structure includes a substrate including plurality of trenches which have progressively different depths as they extend radially inwardly from an edge of the substrate towards a center of the substrate.

公开(公告)号：US10355043B2

公开(公告)日：2019-07-16

申请号：US15635608

申请日：2017-06-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey P. Jacob ,  Deepak K. Nayak ,  Srinivasa R. Banna

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/16 ,  H01L33/32 ,  H01L29/417 ,  H01L33/36 ,  H01L29/778 ,  H01L33/00 ,  H01L27/15 ,  H01L29/66 ,  H01L29/20 ,  H01L29/10 ,  H01L29/872

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to integrated vertical transistors and light emitting diodes and methods of manufacture. The structure includes a vertically oriented stack of material having a light emitting diode (LED) integrated with a source region and a drain region of a vertically oriented active device.

公开(公告)号：US20180026096A1

公开(公告)日：2018-01-25

申请号：US15217643

申请日：2016-07-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey Poovannummoottil Jacob ,  Srinivasa R. Banna ,  Deepak K. Nayak ,  Bartlomiej J. Pawlak

IPC: H01L29/06 ,  H01L29/20 ,  H01L21/3065 ,  H01L29/267 ,  H01L21/02 ,  H01L21/308 ,  H01L23/00 ,  H01L29/16

CPC classification number: H01L29/0657 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/3065 ,  H01L21/3083 ,  H01L23/562 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/267

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to semiconductor wafers with reduced bowing and warping and methods of manufacture. The structure includes a substrate including plurality of trenches which have progressively different depths as they extend radially inwardly from an edge of the substrate towards a center of the substrate.

公开(公告)号：US10217900B2

公开(公告)日：2019-02-26

申请号：US15643061

申请日：2017-07-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Deepak K. Nayak ,  Srinivasa R. Banna ,  Ajey P. Jacob

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diode (LED) structures and methods of manufacture. The method includes: forming a buffer layer on a substrate, the buffer layer having at least a lattice mismatch with the substrate; and relaxing the buffer layer by pixelating the buffer layer into discrete islands, prior to formation of a quantum well.

公开(公告)号：US20190013337A1

公开(公告)日：2019-01-10

申请号：US15642017

申请日：2017-07-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Deepak K. Nayak ,  Srinivasa Banna

IPC: H01L27/12 ,  G09G3/32 ,  H01L33/32

Abstract: An integrated circuit (IC) microdisplay structure is disclosed. The structure can include: a first oxide layer positioned on a substrate; a first voltage source (VSS) pad within the first oxide layer; a metal pillar disposed within the first oxide layer and on the first VSS pad; a first gallium nitride layer disposed on the metal pillar and extending over the first oxide layer; and at least one subpixel formed from the first gallium nitride layer. Alternatively, the structure can include a first oxide layer positioned on a substrate; a first metal layer positioned on the first oxide layer; a first gallium nitride layer on the first metal layer; and at least one subpixel formed from the first gallium nitride layer. The structure may further include a subpixel driver electrically connected to the at least one subpixels where a portion of the subpixel driver is vertically aligned with a subpixel.

公开(公告)号：US10177178B1

公开(公告)日：2019-01-08

申请号：US15642017

申请日：2017-07-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Deepak K. Nayak ,  Srinivasa Banna

IPC: H01L27/14 ,  H01L27/12 ,  G09G3/32 ,  H01L33/32 ,  H01L29/49 ,  H01L29/66

Abstract: An integrated circuit (IC) microdisplay structure is disclosed. The structure can include: a first oxide layer positioned on a substrate; a first voltage source (VSS) pad within the first oxide layer; a metal pillar disposed within the first oxide layer and on the first VSS pad; a first gallium nitride layer disposed on the metal pillar and extending over the first oxide layer; and at least one subpixel formed from the first gallium nitride layer. Alternatively, the structure can include a first oxide layer positioned on a substrate; a first metal layer positioned on the first oxide layer; a first gallium nitride layer on the first metal layer; and at least one subpixel formed from the first gallium nitride layer. The structure may further include a subpixel driver electrically connected to the at least one subpixels where a portion of the subpixel driver is vertically aligned with a subpixel.